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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFB3006PBFXKMA1

Name: IRFB3006PBFXKMA1
Brand: Infineon Technologies
SKU: IRFB3006PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFB3006PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFB3006PBFXKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFB3006PBFXKMA1 from Infineon Technologies (formerly International Rectifier) is a 60V, 2.1 mΩ typ. N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-current synchronous rectification and hard-switched SMPS topologies. It delivers 195A continuous drain current (package-limited), 270A silicon-limited current, and features enhanced body diode dV/dt and dI/dt capability for robust operation in UPS and high-frequency DC-DC converters.

For engineers reviewing the IRFB3006PBFXKMA1 datasheet, IRFB3006PBFXKMA1 pinout, IRFB3006PBFXKMA1 application, or IRFB3006PBFXKMA1 equivalent, key selection criteria include its 2.1 mΩ R_DS(on), 200 nC total gate charge, 1020 pF C_oss, 170A diode recovery rating, and avalanche energy rating of 375 mJ - all critical for high-efficiency, high-reliability power stage design.

Technical Context

This MOSFET employs planar vertical DMOS cell architecture with optimized gate oxide thickness and field plate design to achieve improved dynamic dV/dt ruggedness and fully characterized SOA under unclamped inductive switching. Its low Q_gd/Q_g ratio (60/200 nC) supports fast, controllable turn-off in high-frequency hard-switching circuits up to 500 kHz.

The integrated body diode exhibits 44 ns reverse recovery time (T_J = 25°C, I_F = 170A), 63 nC Q_rr, and 2.4 A peak reverse recovery current - enabling reliable synchronous rectification without external Schottky assistance in 48V-input telecom and server PSUs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage compatible with 48V bus systems with 20% transient margin
R_DS(on) typ.	2.1 mΩ - Enables ≤1.2 W conduction loss at 170A, critical for <95% efficiency in 1kW+ SMPS
I_D (pkg)	195 A - Package-limited continuous current defines thermal design boundary on standard heatsinks
Q_g	200 nC - Gate drive energy requirement determines driver IC selection and switching loss trade-off
C_oss eff. (TR)	1920 pF - Time-related output capacitance directly impacts turn-on loss in zero-voltage switching (ZVS) designs
E_AS	375 mJ - Single-pulse avalanche energy rating validates robustness against inductive kick in UPS hold-up stages
V_SD	1.3 V - Forward voltage of intrinsic body diode sets minimum dead-time requirement in synchronous buck controllers

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting. Standard lead form with 2.54 mm pin pitch and 1.1 N·m maximum mounting torque.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance return path essential for stable gate control and accurate R_DS(on)-based current monitoring
Gate	Control terminal for channel formation	High-impedance input requiring <2.0 Ω series resistance to damp ringing during 100+ A/ns switching transitions

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	1360 A/μs - Enables reliable commutation in high-di/dt synchronous rectifiers without oscillation or snap-off
Lead-free, halogen-free construction	RoHS-compliant TO-220AB - Meets IPC-J-STD-020D reflow profile for lead-free assembly without solder joint reliability risk
Thermally limited avalanche rating	375 mJ single-pulse - Allows safe operation under short-circuit or overload conditions without derating for transient events
Characterized C_oss energy/time profiles	C_oss eff. (ER) = 1480 pF, (TR) = 1920 pF - Enables accurate ZVS timing and loss prediction in resonant LLC and phase-shifted full-bridge designs
Improved dynamic dV/dt ruggedness	Rated for >2.5 V/ns - Prevents false turn-on in high dv/dt environments such as motor drives and PFC boost stages

Applications

Server PSU Synchronous Rectification

Telecom 48V DC-DC Converter

Use Scenario: Secondary-side synchronous rectification in 1.5 kW, 48V-output server power supply using interleaved LLC topology.

IC Role / Device Role / Timing Role: High-side switch replacing Schottky diode; driven by dedicated gate controller with adaptive dead-time control.

Use Value: Reduces conduction loss by 65% vs. 40V Schottky, enabling >96% full-load efficiency and 15°C lower secondary-side temperature rise.

Use Scenario: Primary-side high-frequency switching in 800W telecom rectifier with active clamp forward architecture.

IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 50 ns dead time; handles 170A peak drain current.

Use Value: Low Q_gd/Q_g ratio ensures clean turn-off edge and eliminates shoot-through risk during hard switching transitions.

Uninterruptible Power Supply (UPS)

Industrial Motor Drive Inverter Stage

Use Scenario: Bidirectional DC-link switch in 5 kVA online UPS supporting battery charging and inverter modes.

IC Role / Device Role / Timing Role: Unclamped inductive switching device subjected to repetitive avalanche during battery disconnect transients.

Use Value: 375 mJ E_AS rating allows 100% rated load interruption without external snubbers or derating.

Use Scenario: Phase-leg switch in 15 kW servo drive inverter with 125°C ambient and forced-air cooling.

IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 20 kHz PWM stage; leverages low R_DS(on) and fast body diode recovery.

Use Value: 44 ns t_rr and 2.4 A I_RRM prevent cross-conduction losses and eliminate need for anti-parallel SiC diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 60V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP195N6F6	R_DS(on) = 1.8 mΩ typ., Q_g = 225 nC, C_oss = 1150 pF	Higher gate charge increases driver loss; slightly lower R_DS(on) improves conduction but raises cost	Preferred where lowest possible conduction loss dominates over switching loss budget
IXFH180N60X3	R_DS(on) = 2.4 mΩ typ., Q_g = 170 nC, E_AS = 290 mJ	Lower gate charge enables faster switching; reduced avalanche rating limits use in UPS fault handling	Optimal for high-frequency (>400 kHz) SMPS where avalanche stress is minimal

Compared with STP195N6F6 and IXFH180N60X3, IRFB3006PBFXKMA1 offers the best balance of low R_DS(on), moderate Q_g, and industry-leading E_AS, making it uniquely suited for mission-critical 48V power systems requiring both efficiency and fault robustness.

Availability

IRFB3006PBFXKMA1 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply (UPS) hold-up stages, and high-speed power switching applications requiring stable component supply across multi-year production cycles.

Supply support for IRFB3006PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

This part belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in industrial power supplies, telecom infrastructure, and UPS systems.

FAQ

What is the maximum continuous drain current for IRFB3006PBFXKMA1 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 190 A, as specified in the Absolute Maximum Ratings table. This value reflects silicon-limited conduction capacity under thermal constraint, distinct from the 195 A package-limited rating at 25°C. Derating follows the linear factor of 2.5 W/°C above 25°C case temperature.

Does IRFB3006PBFXKMA1 support paralleling for higher current applications?

Yes - its positive R_DS(on) temperature coefficient (normalized resistance increases with junction temperature) enables inherently stable current sharing when multiple units are paralleled. Designers must ensure matched gate drive loop inductance and symmetrical PCB layout to avoid dynamic imbalance during switching transitions.

What is the recommended gate resistor value for hard-switched 300 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 300 kHz hard-switched operation with 170 A drain current and 10 V gate drive. This value balances switching speed (118 ns t_d(off)) against gate ringing suppression and driver power dissipation (≤1.8 W average at 300 kHz).

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

At 170 A and 25°C, the body diode exhibits 1.3 V forward drop and 44 ns t_rr, outperforming most 45V Schottky diodes (typically 0.6–0.8 V drop but >100 ns t_rr). The fast, soft recovery minimizes voltage spikes and EMI, eliminating need for snubbers while maintaining efficiency within 0.5% of discrete Schottky solutions.

IRFB3006PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 170A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFB3006PBFXKMA1 FAQ

1.How can I place an order for IRFB3006PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFB3006PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFB3006PBFXKMA1 reliable?

The price and inventory of IRFB3006PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFB3006PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFB3006PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFB3006PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFB3006PBFXKMA1?

IRFB3006PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFB3006PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFB3006PBFXKMA1?

For technical support, including IRFB3006PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFB3006PBFXKMA1 requirements.

6.How does Aetrix verify that IRFB3006PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFB3006PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFB3006PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFB3006PBFXKMA1?

All IRFB3006PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFB3006PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFB3006PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFB3006PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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