Infineon Technologies IRL1404LPBF

Overview

IRL1404LPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D2Pak package, rated for 40 V V_DS, 0.004 Ω R_DS(on) at V_GS = 10 V and I_D = 95 A, and fully avalanche-rated with 520 mJ single-pulse energy. It serves as a high-current synchronous rectifier or low-side switch in DC-DC converters, motor drives, and battery protection circuits.

For engineers reviewing the IRL1404LPBF datasheet, IRL1404LPBF pinout, IRL1404LPBF application, or IRL1404LPBF equivalent, key selection criteria include its 4.3 V gate threshold enabling 5 V/3.3 V logic drive, ultra-low on-resistance at low V_GS, fast switching (t_r = 270 ns), rugged unclamped inductive switching capability, and surface-mount D2Pak thermal performance (R_θJC = 0.75 °C/W).

Technical Context

This seventh-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining robust transient handling. Its body diode exhibits 1.3 V forward voltage at 95 A and 63–94 ns reverse recovery time, supporting high-frequency hard-switched topologies without external Schottky supplementation.

The MOSFET features fully specified dynamic dv/dt immunity (5.0 V/ns), integral source/drain inductance (L_S/L_D ≈ 7.5 nH), and gate charge profile optimized for low driver loss: Q_g = 140 nC, Q_gd = 60 nC, and Q_gs = 48 nC at V_DS = 32 V - enabling efficient operation in 100–500 kHz SMPS designs.

Key Specifications

Pinout & Package

D2Pak (TO-263) surface-mount package with isolated tab (drain-connected), optimized for high-power density PCB layouts and thermal interface to heatsinks via soldered tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL1404LPBF, IRF1404PBF trades gate drive compatibility for slightly lower cost, while STP140NF4L offers marginally better conduction efficiency but sacrifices surface-mount flexibility and increases driver loss - making IRL1404LPBF optimal for space-constrained, logic-driven, high-current SMPS designs.

Availability

IRL1404LPBF is available at Aetrix Electronics and suitable for high-current DC-DC converters, brushed motor drives, and battery protection circuits requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRL1404LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® power MOSFET portfolio with full backward compatibility and extended product longevity.

The IRL1404LPBF belongs to the seventh-generation logic-level HEXFET series, designed specifically for high-efficiency, high-density power conversion in 12–48 V systems where low gate drive voltage and minimal conduction loss are critical.

FAQ

What is the maximum continuous drain current for IRL1404LPBF at 100°C case temperature?

The maximum continuous drain current is 110 A at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain case temperature; actual usable current depends on ambient conditions and heatsink design.

Can IRL1404LPBF be driven directly from a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage range of 1.0–3.0 V ensures full enhancement at 3.3 V, and R_DS(on) remains ≤0.0059 Ω at V_GS = 4.3 V and I_D = 40 A. For reliable 100 A operation, ensure gate drive can source ≥2 A peak current to charge 140 nC gate capacitance within required switching times.

Does IRL1404LPBF include an integrated body diode, and what are its key parameters?

Yes - it integrates a fast, rugged p-n junction body diode with V_SD = 1.3 V at 95 A and T_J = 25°C, t_rr = 63–94 ns, and Q_rr = 170–250 nC. These values are measured under standardized conditions (I_F = 95 A, di/dt = 100 A/µs) and support efficient freewheeling in hard-switched topologies without external diodes.

What is the recommended PCB layout practice for thermal management of the D2Pak package?

Use ≥25 mm² of 2 oz copper connected to the exposed drain tab with ≥6 thermal vias (0.3 mm diameter, filled or plated) to inner ground/power planes. Maintain minimum 1.6 mm clearance from tab edges to other traces. Avoid routing signal traces under the tab; instead, place gate and source routing outside the thermal pad area to minimize coupling.