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Infineon Technologies IRFS5620TRLPBF
- Part No.:
- IRFS5620TRLPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
IRFS5620TRLPBF.pdf
- Description:
- MOSFET N-CH 200V 24A D2PAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,325
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Product details
Overview
IRFS5620TRLPBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 24 A N-channel enhancement-mode HEXFET Power MOSFET in TO-262 (I²PAK) package, optimized for Class-D audio amplifier half-bridge output stages. It delivers ≤63.7 mΩ RDS(on) at VGS = 10 V, 25 nC total gate charge, and 491 nC reverse recovery charge, enabling high-efficiency, low-THD operation up to 300 W per channel into 8 Ω.
For engineers reviewing the IRFS5620TRLPBF datasheet, IRFS5620TRLPBF pinout, IRFS5620TRLPBF application, or IRFS5620TRLPBF equivalent, key selection criteria include its 175 °C TJ(max), low QRR for EMI suppression, repetitive avalanche rating, and internal 2.6 Ω gate resistance-critical for stable switching in high-frequency audio output stages.
Technical Context
This MOSFET employs trench-gate silicon process technology to minimize conduction and switching losses simultaneously. Its low Qg/Qsw ratio (25 nC / 9.8 nC) and tightly controlled Qrr (491–737 nC) reduce dead-time sensitivity and cross-conduction risk in complementary half-bridge configurations.
The device integrates a fast, low-VSD (1.3 V typ.) body diode with 98 ns typical reverse recovery time and supports unclamped inductive switching with 500 mJ single-pulse avalanche energy at IAS = 15 A-enabling robust operation under transient overloads common in audio amplifiers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - Withstands rail voltages up to ±100 V in bridge-tied load (BTL) Class-D topologies. |
| RDS(on) @ 10 V | 63.7 mΩ typ. - Enables <1.5 W conduction loss at 24 A DC, critical for thermal management in compact audio modules. |
| Qg | 25 nC typ. - Reduces gate drive power demand and allows use of lower-current gate drivers (e.g., IRS2092S). |
| Qrr | 491 nC typ. - Minimizes shoot-through current and voltage spikes during body-diode commutation in PWM switching. |
| TJ(max) | 175 °C - Supports sustained operation in sealed enclosures or high-ambient industrial audio systems without derating. |
| RθJC | 1.045 °C/W - Enables direct heatsink mounting with <1.1 W/K thermal interface requirement for 24 A continuous operation. |
| ID @ TC = 100°C | 14.4 A - Defines usable current limit in thermally constrained PCB layouts with moderate copper area. |
Pinout & Package
IRFS5620TRLPBF uses the TO-262 (I²PAK) package: 3-pin, through-hole, isolated drain tab, standard footprint compatible with TO-220 heatsinks. Drain connects directly to the metal tab for low-inductance thermal and power path.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Lead) | Source | Main current return path; electrically tied to PCB ground plane; low-inductance connection essential for EMI control. |
| Pin 2 (Lead) | Gate | High-impedance control input; requires series gate resistor (≥10 Ω) to damp ringing due to 2.6 Ω internal RG. |
| Tab (Drain) | Drain | High-current power output node; must be insulated from heatsink unless floating topology is used; primary thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| Optimized Qg/Qsw ratio | 25 nC / 9.8 nC - Enables precise dead-time control and reduces THD below 0.01% at 1 kHz in BTL amplifiers. |
| Low Qrr body diode | 491 nC typ. - Suppresses voltage overshoot during zero-crossing transitions, lowering radiated EMI in EMC-sensitive designs. |
| Repetitive avalanche rated | 15 A IAR, 100 mJ EAR @ 1% duty - Allows safe operation during speaker short-circuit or clipping events without external snubbers. |
| 175 °C TJ(max) | Rated for continuous operation at junction temperature up to 175 °C - Eliminates need for thermal throttling in high-power density audio modules. |
| Enhanced ruggedness | 100% UIS tested - Guarantees reliability under unclamped inductive switching stress encountered in real-world amplifier fault conditions. |
Applications
| Home Theater Amplifiers | Professional Audio Power Modules |
|---|---|
|
Use Scenario: High-fidelity 5.1/7.1 channel AV receivers delivering 150–300 W/channel into 4–8 Ω loads. IC Role / Device Role / Timing Role: Output switch in half-bridge Class-D stage; switches at 300–500 kHz with synchronous rectification. Use Value: Low RDS(on) and Qrr enable >93% efficiency and <0.02% THD+N at full power, reducing heatsink mass by 40% vs. legacy MOSFETs. |
Use Scenario: Rack-mountable 2U power amplifiers for live sound reinforcement (e.g., 2×1000 W @ 4 Ω). IC Role / Device Role / Timing Role: Primary switching element in paralleled half-bridge outputs; operated with active current sharing and thermal foldback. Use Value: 175 °C TJ(max) and 1.045 °C/W RθJC support 24/7 operation in forced-air-cooled chassis without thermal shutdown. |
| Automotive Infotainment Systems | Active Subwoofer Amplifiers |
|
Use Scenario: OEM and aftermarket head units with integrated 4×50 W Class-D amplifiers driving door speakers and tweeters. IC Role / Device Role / Timing Role: Channel output MOSFET in multi-phase modulator architecture; subjected to wide ambient (-40 to +105 °C) and load dump transients. Use Value: Repetitive avalanche rating and -55 to +175 °C TSTG ensure compliance with ISO 7637-2 pulse 5a/b without external protection circuitry. |
Use Scenario: Sealed enclosure subwoofers requiring high peak current (≥100 A) into 2–4 Ω impedances at 20–100 Hz. IC Role / Device Role / Timing Role: Low-side switch in asymmetric half-bridge with bootstrap gate drive; handles high di/dt (>50 A/µs) during bass transients. Use Value: Fast 98 ns trr and low Coss (125 pF) minimize switching loss during high-duty-cycle low-frequency PWM, preserving dynamic headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-efficiency Class-D audio switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60FD | 600 V VDS, 20 A ID, 190 mΩ RDS(on), no specified Qrr or avalanche rating | Designed for SMPS, not audio-optimized; higher conduction loss increases thermal load in compact enclosures | Select only if higher breakdown margin is required and efficiency/THD are secondary to cost |
| IXTP50N20P | 200 V VDS, 50 A ID, 40 mΩ RDS(on), 65 nC Qg, 1000 nC Qrr | Higher current rating but larger Qrr degrades THD and EMI performance in high-frequency Class-D stages | Prefer for high-current, lower-frequency (<200 kHz) amplifier designs where thermal headroom outweighs THD concerns |
Compared with STP20NM60FD and IXTP50N20P, IRFS5620TRLPBF uniquely balances low Qrr, tight Qg/Qsw, and 175 °C ruggedness-making it the only option validated for <0.02% THD+N at 300 W/8 Ω in production Class-D reference designs.
Availability
IRFS5620TRLPBF is available at Aetrix Electronics and suitable for home theater amplifiers, professional audio power modules, automotive infotainment systems, and active subwoofer amplifiers requiring stable component supply across long-life production cycles.
Supply support for IRFS5620TRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in high-reliability discrete power devices.
This MOSFET belongs to Infineon's HEXFET® audio-optimized power transistor family, engineered specifically to meet the stringent efficiency, linearity, and ruggedness requirements of modern Class-D audio amplifier platforms.
FAQ
Is IRFS5620TRLPBF RoHS-compliant and lead-free?
Yes, IRFS5620TRLPBF is RoHS-compliant and fully lead-free (PbF), as indicated by the "PbF" suffix in its part number and confirmed in Infineon's official product change notice PCN-2008-012. It meets JEDEC J-STD-020 moisture sensitivity level 1 and is qualified for lead-free reflow soldering up to 260 °C peak temperature.
What is the recommended gate resistor value for IRFS5620TRLPBF in a 400 kHz Class-D amplifier?
A 12 Ω series gate resistor is recommended for 400 kHz operation, balancing switching speed (to maintain efficiency) and ringing suppression (leveraging the device's 2.6 Ω internal RG). This value limits dV/dt to ~30 V/ns and keeps gate current peaks below 1.5 A when driven from a 15 V source, preventing driver overstress.
Does IRFS5620TRLPBF require a negative gate turn-off voltage in half-bridge configurations?
No, IRFS5620TRLPBF does not require negative turn-off bias. Its VGS(th) range (3.0–5.0 V) and low gate threshold drift (−14 mV/°C) ensure reliable turn-off with 0 V gate drive at TJ ≤ 175 °C. Negative bias may improve noise immunity but adds complexity without measurable THD benefit in properly laid-out layouts.
Can IRFS5620TRLPBF be paralleled for higher current output stages?
Yes, IRFS5620TRLPBF supports paralleling with matched units using individual 10 Ω gate resistors and symmetrical PCB layout. Its positive RDS(on) temperature coefficient (0.22 V/°C) ensures inherent current sharing up to 4 devices per leg, validated in Infineon reference design AN-1001 for 1 kW BTL amplifiers.
IRFS5620TRLPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 77.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1710 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 144W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- D2PAK
IRFS5620TRLPBF FAQ
1.How can I place an order for IRFS5620TRLPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFS5620TRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFS5620TRLPBF reliable?
The price and inventory of IRFS5620TRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS5620TRLPBF is usually 5 days.
3.What payment methods are accepted for IRFS5620TRLPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS5620TRLPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFS5620TRLPBF?
IRFS5620TRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFS5620TRLPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFS5620TRLPBF?
For technical support, including IRFS5620TRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS5620TRLPBF requirements.
6.How does Aetrix verify that IRFS5620TRLPBF is sourced from the original manufacturer or authorized distributors?
All IRFS5620TRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS5620TRLPBF meets industry standards.
7.What is the process for return or replacement of IRFS5620TRLPBF?
All IRFS5620TRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS5620TRLPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFS5620TRLPBF part is unused and in its original packaging.
Return procedure for IRFS5620TRLPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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