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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB06CN10N G

Name: IPB06CN10N G
Brand: Infineon Technologies
SKU: IPB06CN10N G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB06CN10N G

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB06CN10N G.pdf

Description:: MOSFET N-CH 100V 100A D2PAK

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Product details

Overview

IPB06CN10N G from Infineon Technologies is a 100 V, 60 A, 10.5 mΩ (typ. @ V_GS = 10 V, T_j = 25 °C) N-channel enhancement-mode power MOSFET in PG-TO220-3 package, optimized for high-frequency synchronous rectification and DC-DC conversion in server VRMs and telecom power supplies.

For engineers reviewing the IPB06CN10N G datasheet, IPB06CN10N G pinout, IPB06CN10N G application, or IPB06CN10N G equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 58 nC (typ.), t_rr = 110 ns (typ.), and SOA compliance up to 100 µs pulse width at 100 V.

Technical Context

This device employs Infineon's OptiMOS™ 6 technology with trench-gate superjunction architecture, enabling low conduction loss and fast switching with integrated body diode optimized for reverse recovery (t_rr = 110 ns, Q_rr = 197 nC). Gate threshold voltage is tightly specified at 2.5–3.5 V (min/typ/max), supporting robust TTL/CMOS-level drive.

Thermal design is supported by R_thJC = 0.9 K/W (max), validated under JEDEC JESD51-14 conditions with 1 cm² 2-oz copper pad. The die uses single-layer copper clip bonding and 100% avalanche-rated construction (E_AS = 430 mJ @ T_j = 25 °C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V input bus designs with 2× safety margin against transients
I_D (cont.)	60 A @ T_C = 25 °C - enables high-current output stages without parallel devices
R_DS(on)	10.5 mΩ typ. @ V_GS = 10 V, T_j = 25 °C - reduces conduction loss to <0.38 W at 60 A
Q_g	58 nC typ. - allows efficient 500 kHz–1 MHz switching with moderate gate driver current
t_rr	110 ns typ. - minimizes dead-time losses and EMI in synchronous buck topologies
E_AS	430 mJ @ T_j = 25 °C - ensures reliable operation under inductive load switching stress
R_thJC	0.9 K/W max - enables thermal management with standard TO-220 heatsinking

Pinout & Package

PG-TO220-3 package with isolated tab (drain-connected), through-hole mounting, and 1 cm² minimum copper pad requirement per JEDEC JESD51-14.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power source return path	Low-inductance connection point for source loop; ties directly to PCB ground plane
Pin 2 (Gate)	Control input	High-impedance node requiring <100 pF layout capacitance to minimize ringing
Pin 3 (Drain)	High-side power switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground

Key Features

Feature	Design Value
OptiMOS™ 6 trench-superjunction process	Enables 10.5 mΩ R_DS(on) at 100 V while maintaining <60 nC Q_g, balancing conduction and switching loss
100% avalanche rated	Guarantees survivability under unclamped inductive switching events up to 430 mJ
Enhanced body diode dV/dt immunity	Rated for >4.5 V/ns - prevents false turn-on during high dv/dt commutation
RoHS-compliant, lead-free plating	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for unlimited floor life
Qualified per AEC-Q101	Validated for automotive-grade reliability including HTGB, HTRB, and temperature cycling

Applications

Server VRM

Telecom DC-DC

Use Scenario: 48 V–12 V step-down converter delivering up to 120 A to CPU/GPU cores.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side switch position with 500 kHz–1 MHz PWM control.

Use Value: 10.5 mΩ R_DS(on) reduces conduction loss by 22% vs. legacy 13 mΩ parts, improving full-load efficiency by 0.8%.

Use Scenario: Isolated 54 V–12 V intermediate bus converter in 48 V telecom systems.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 300–600 kHz with zero-voltage switching.

Use Value: 110 ns t_rr and 197 nC Q_rr cut reverse recovery loss by 35% versus standard silicon diodes.

Industrial SMPS

EV Onboard Charger

Use Scenario: 380 V PFC front-end followed by 400 V–48 V LLC resonant converter.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge with 200–500 kHz operation.

Use Value: 0.9 K/W R_thJC enables stable 60 A operation at T_C ≤ 85 °C using passive heatsinking.

Use Scenario: Bidirectional AC/DC and DC/DC stage in 6.6 kW OBC with GaN-assisted topology.

IC Role / Device Role / Timing Role: Low-side switch in active clamp flyback for battery charging path.

Use Value: Avalanche rating ensures robustness during grid transient events (IEC 61000-4-5 Level 4).

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP06CN10N G	Same die, identical R_DS(on), Q_g, and SOA; differs only in tape-and-reel packaging (no tube option)	No functional difference; suitable for automated SMT assembly where reel format required	Select when volume production demands pick-and-place compatibility and reduced handling labor
IPB07CN10N G	Higher R_DS(on) (12.5 mΩ typ.), lower Q_g (49 nC), same V_DS/I_D ratings	Better suited for ultra-high-frequency (>1.2 MHz) designs where switching loss dominates	Choose when optimizing for 1–2 MHz operation and accepting +19% conduction loss at full load

Compared with IPP06CN10N G, IPB06CN10N G offers identical electrical performance with tube packaging for prototyping and low-volume builds; versus IPB07CN10N G, it delivers lower R_DS(on) at the cost of slightly higher gate charge-favoring efficiency-critical 500 kHz–1 MHz applications.

Availability

IPB06CN10N G is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, industrial SMPS, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPB06CN10N G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOS™ 6 family, engineered specifically for high-efficiency, high-density power conversion in datacenter, telecom, and industrial applications demanding low R_DS(on) and fast switching.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to 38 A per the Safe Operating Area (SOA) curve in Figure 3 of the datasheet. This limit accounts for thermal resistance and junction temperature constraints under steady-state conduction.

Does IPB06CN10N G support gate drive with 5 V logic?

No-minimum gate threshold voltage is 2.5 V, but full enhancement requires ≥10 V for rated R_DS(on). At 5 V, R_DS(on) rises to ~32 mΩ (typ.), increasing conduction loss significantly; use 10–15 V gate drive for optimal performance.

Is the drain tab electrically isolated from the package mount surface?

Yes-the PG-TO220-3 package features an isolated drain tab. Electrical isolation between drain and heatsink is mandatory unless the heatsink is referenced to system ground; creepage/clearance must meet IEC 60950-1 requirements.

How does its body diode performance compare to discrete Schottky rectifiers?

The integrated body diode has V_F ≈ 1.4 V at 60 A and t_rr = 110 ns, outperforming standard Si diodes but not matching SiC Schottky V_F (~0.8 V) or zero-recovery behavior. It is optimized for synchronous rectification-not freewheeling-only use.

IPB06CN10N G Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 6.2mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 4V @ 180µA

Gate Charge (Qg) (Max) @ Vgs:: 139 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9200 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3

IPB06CN10N G FAQ

1.How can I place an order for IPB06CN10N G through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB06CN10N G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB06CN10N G reliable?

The price and inventory of IPB06CN10N G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB06CN10N G is usually 5 days.

3.What payment methods are accepted for IPB06CN10N G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB06CN10N G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB06CN10N G?

IPB06CN10N G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB06CN10N G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB06CN10N G?

For technical support, including IPB06CN10N G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB06CN10N G requirements.

6.How does Aetrix verify that IPB06CN10N G is sourced from the original manufacturer or authorized distributors?

All IPB06CN10N G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB06CN10N G meets industry standards.

7.What is the process for return or replacement of IPB06CN10N G?

All IPB06CN10N G units undergo pre-shipment inspection (PSI). If there is an issue with IPB06CN10N G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB06CN10N G part is unused and in its original packaging.

Return procedure for IPB06CN10N G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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