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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3808LPBF

Name: IRF3808LPBF
Brand: Infineon Technologies
SKU: IRF3808LPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3808LPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: IRF3808LPBF.pdf

Description:: MOSFET N-CH 75V 106A TO262

Quantity:: RFQ Add To RFQ list

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Inventory:2,180

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Product details

Overview

IRF3808LPBF from Infineon Technologies is a 75 V, 106 A N-channel enhancement-mode HEXFET® Power MOSFET in TO-262 (ISOTOP) package, featuring 7.0 mΩ R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and 430 mJ single-pulse avalanche energy - designed for high-current industrial motor drive inverters.

For engineers reviewing the IRF3808LPBF datasheet, IRF3808LPBF pinout, IRF3808LPBF application, or IRF3808LPBF equivalent, key selection criteria include continuous drain current derating above 100°C, gate charge (150–220 nC), body diode reverse recovery performance (t_rr = 93–140 ns), and thermal resistance (R_θJC = 0.75°C/W).

Technical Context

This MOSFET employs Advanced Planar Stripe processing to achieve ultra-low on-resistance per silicon area while maintaining robust unclamped inductive switching capability. Its 175°C T_J rating and low R_θJC support high-power density designs without forced cooling in motor control H-bridges.

The device integrates a fast-recovery body diode with 1.3 V forward voltage at 82 A and supports repetitive avalanche operation up to T_Jmax, enabled by controlled dynamic dv/dt rating (5.5 V/ns) and optimized internal inductance (L_D/L_S specified).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage in off-state; defines upper limit of DC bus voltage in half-bridge motor drives
R_DS(on)	7.0 mΩ max @ V_GS = 10 V, I_D = 82 A - Directly determines conduction loss and heatsink sizing at 106 A continuous
I_D @ T_C = 25°C	106 A - Continuous current capability with case-mounted heatsinking; enables single-device 5–7 kW motor phase legs
E_AS	430 mJ - Single-pulse avalanche energy; allows safe operation during inductive turn-off transients without snubbers
Q_g	220 nC max - Total gate charge; sets minimum gate driver peak current (≥3 A) and switching loss trade-off
R_θJC	0.75°C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates with predictable ΔT_J-C
t_rr	140 ns max - Body diode reverse recovery time; constrains maximum PWM frequency before cross-conduction risk

Pinout & Package

TO-262 (ISOTOP) package: 3-pin, through-hole, isolated tab (drain-connected), standard footprint compatible with TO-220 heatsink mounts. Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically tied to metal tab; requires insulated mounting or direct cold-plate contact for thermal path
Source	Power return / reference node	Low-inductance source connection critical for gate drive stability and diode commutation
Gate	Control input	High-impedance MOS control node; requires <2.5 Ω series resistance to damp ringing during 140 ns fall time

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.0 mΩ enables ≤0.6 W conduction loss at 82 A, reducing heatsink mass by >40% vs. legacy 10 mΩ devices
175°C T_J rating	Permits sustained operation in sealed enclosures or high-ambient environments without derating below 100°C case temp
Repetitive avalanche capability	Validated up to T_Jmax per Fig. 15/16; eliminates need for external avalanche-rated snubbers in motor phase-legs
Fast body diode recovery	t_rr = 93–140 ns with Q_rr = 340–510 nC - reduces shoot-through risk and EMI in 20–50 kHz PWM inverters

Applications

Industrial Motor Drive Inverter

DC-AC Solar Microinverter

Use Scenario: Three-phase 3–5 kW BLDC motor drive with space-constrained heatsink and no forced air.

IC Role / Device Role / Timing Role: High-side/low-side switch in 6-pack inverter leg; handles 106 A continuous phase current with 50 kHz PWM.

Use Value: 0.75°C/W R_θJC and 175°C T_J allow passive cooling; 430 mJ E_AS prevents failure during load dump events.

Use Scenario: Single-phase transformerless solar microinverter with bidirectional current flow and grid-synchronization.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in H-bridge; conducts reverse current via body diode during zero-crossing.

Use Value: Low Q_rr (340–510 nC) and fast t_rr (93–140 ns) minimize reactive losses and EMI during bidirectional commutation.

Uninterruptible Power Supply (UPS) Output Stage

Automotive HVAC Blower Driver

Use Scenario: Online double-conversion UPS delivering clean 230 VAC with battery backup and high crest factor loads.

IC Role / Device Role / Timing Role: Final output stage switch handling peak currents ≥3× RMS; subjected to frequent overload and short-circuit stress.

Use Value: Repetitive avalanche rating allows safe clamping during output shorts; 550 A I_DM supports 10 ms surge without desaturation.

Use Scenario: 12 V automotive HVAC blower with PWM speed control, operating from -40°C to +125°C under hood.

IC Role / Device Role / Timing Role: Low-side switch controlling brushed DC motor; exposed to load dump transients and cold-crank voltage dips.

Use Value: 75 V V_DSS withstands 35 V load dump spikes; -55°C to +175°C T_STG/T_J range ensures reliability across full automotive temperature profile.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	R_DS(on) = 8.0 mΩ, I_D = 110 A, E_AS = 320 mJ, TO-220 package	Lower avalanche robustness; higher conduction loss at >60 A; requires larger heatsink	Select when cost sensitivity outweighs avalanche margin and thermal density requirements
STP110N8F6	R_DS(on) = 6.5 mΩ, I_D = 100 A, E_AS = 520 mJ, TO-220FP package	Higher avalanche energy but lower continuous current; surface-mount variant limits thermal path options	Select when higher avalanche margin is critical and PCB layout permits TO-220FP mounting

Compared with IRF3205PbF and STP110N8F6, IRF3808LPBF offers optimal balance of low R_DS(on), high continuous current, and proven repetitive avalanche behavior in through-hole industrial packages - making it preferred for thermally constrained motor drive legs where reliability under transient overloads is non-negotiable.

Availability

IRF3808LPBF is available at Aetrix Electronics and suitable for industrial motor drive inverters, solar microinverters, and uninterruptible power supply (UPS) output stages requiring stable component supply and long-term production continuity.

Supply support for IRF3808LPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion systems - specifically engineered for motor drives, renewable energy inverters, and industrial SMPS where thermal robustness and avalanche tolerance are critical.

FAQ

What is the maximum allowable gate-to-source voltage for IRF3808LPBF?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. For reliable switching, gate drive should be limited to +10 V to +15 V for turn-on and –5 V to 0 V for turn-off, per the device's 2.0–4.0 V threshold range and transconductance curve.

Can IRF3808LPBF be used in synchronous rectification applications?

Yes - its low R_DS(on) (7.0 mΩ), fast body diode (t_rr = 93–140 ns), and low Q_rr (340–510 nC) make it suitable for synchronous rectification in DC-DC converters up to 100 kHz. However, external gate control timing must precisely align with current zero-crossing to avoid shoot-through.

Is IRF3808LPBF lead-free and RoHS compliant?

Yes - the "PbF" suffix confirms lead-free termination and full compliance with EU RoHS Directive 2011/65/EU and JEDEC JS-709B. The device uses matte tin plating on leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level (MSL) 1 for unlimited floor life at ≤30°C/60% RH.

Does IRF3808LPBF require a gate resistor, and what value is recommended?

Yes - a series gate resistor is required to control dV/dt and suppress oscillation. For 106 A switching with 220 nC Q_g, a 2.5 Ω resistor is specified in the datasheet for turn-off delay testing. Typical design values range from 1.5 Ω (fast switching, higher EMI) to 5.6 Ω (slower, lower EMI), depending on driver capability and layout parasitics.

IRF3808LPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 106A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7mOhm @ 82A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5310 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-262

IRF3808LPBF FAQ

1.How can I place an order for IRF3808LPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3808LPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3808LPBF reliable?

The price and inventory of IRF3808LPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3808LPBF is usually 5 days.

3.What payment methods are accepted for IRF3808LPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3808LPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3808LPBF?

IRF3808LPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3808LPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3808LPBF?

For technical support, including IRF3808LPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3808LPBF requirements.

6.How does Aetrix verify that IRF3808LPBF is sourced from the original manufacturer or authorized distributors?

All IRF3808LPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3808LPBF meets industry standards.

7.What is the process for return or replacement of IRF3808LPBF?

All IRF3808LPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3808LPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3808LPBF part is unused and in its original packaging.

Return procedure for IRF3808LPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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