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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF6609TR1

Name: IRF6609TR1
Brand: Infineon Technologies
SKU: IRF6609TR1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF6609TR1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: DirectFET™ Isometric MT

Datasheet:: IRF6609TR1.pdf

Description:: MOSFET N-CH 20V 31A DIRECTFET

Quantity:: RFQ Add To RFQ list

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Inventory:3,954

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Product details

Overview

IRF6609TR1 from Infineon Technologies (formerly International Rectifier) is a 20V N-channel power MOSFET in DirectFET® MT package, optimized as a synchronous rectifier FET in high-frequency DC-DC converters. It delivers 2.0 mΩ R_DS(on) at V_GS = 10 V, 46 nC total gate charge, and 1.4 °C/W junction-to-case thermal resistance, enabling high-efficiency 12 V input buck regulation for modern processors.

For engineers reviewing the IRF6609TR1 datasheet, IRF6609TR1 pinout, IRF6609TR1 application, or IRF6609TR1 equivalent, key selection criteria include C_dv/dt immunity for noise-resistant synchronous operation, dual-sided cooling compatibility, ultra-low profile (<0.7 mm), and validated performance in 12 V bus converter topologies with tight thermal constraints.

Technical Context

The IRF6609TR1 employs trench-gate HEXFET silicon in a copper-can DirectFET MT package with top-side source and bottom-side drain terminals. Its low 2.6 mΩ R_DS(on) at 4.5 V gate drive supports 3.3 V logic-level control in synchronous buck stages, while its 860 pF Crss and 15 nC Q_gd minimize Miller-induced turn-on risk during high dV/dt transitions.

Thermal design leverages dual-sided cooling: the exposed copper drain pad enables direct PCB heat sinking, and the 1.0 °C/W junction-to-PCB resistance (mounted) improves thermal transfer by 80% versus prior-generation packages. The device is rated for 150 °C junction temperature and exhibits -6.1 mV/°C V_GS(th) drift.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	20 V - Maximum blocking voltage for 12 V bus applications with margin against transients
R_DS(on) @ 10 V	2.0 mΩ - Enables <1 W conduction loss at 31 A continuous drain current
R_DS(on) @ 4.5 V	2.6 mΩ - Supports logic-level gate drive without level-shifting in compact point-of-load designs
Q_g	46 nC - Low gate charge reduces driver power and switching losses in >500 kHz converters
R_θJC	1.4 °C/W - Enables high-power density thermal management via case-mounted heatsinking
C_rss	860 pF - Limits Miller feedback to suppress false turn-on under high dV/dt conditions
I_D @ T_C = 25°C	31 A - Continuous current rating suitable for 25–30 A output stages with derating

Pinout & Package

IRF6609TR1 uses the DirectFET MT package: a surface-mount, copper-can, dual-sided cooling package with footprint compatible with SO-8 layouts but only 0.7 mm height. Drain is connected to the bottom copper pad; Source and Gate are top-side terminals.

Pin/Terminal	Circuit Role	Design Meaning
Top-Side Pad (S1/S2)	Source	Parallel top-side source terminals reduce source inductance and improve current sharing in paralleled configurations
Top-Side Pad (G)	Gate	Single gate terminal with low-inductance path; designed for Kelvin-source gate drive layout
Bottom Copper Pad	Drain	Exposed drain connects directly to PCB ground plane or heatsink for optimal thermal and electrical performance

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g figure of merit	92 mΩ·nC - Balances conduction and switching losses for highest efficiency in 500 kHz–1 MHz buck converters
C_dv/dt-induced turn-on immunity	Validated at 12 V bus with fast edge rates - Eliminates need for external gate clamping in synchronous rectifier position
Dual-sided cooling architecture	1.0 °C/W R_θJ-PCB - Doubles effective heat dissipation area vs. standard SO-8, enabling smaller thermal pads
DirectFET MT mechanical compatibility	SO-8 footprint with 0.7 mm height - Allows drop-in replacement in legacy layouts without board re-spin
Body diode reverse recovery	Q_rr = 26–39 nC, t_rr = 32–48 ns - Minimizes shoot-through risk and recovery loss in hard-switched synchronous operation

Applications

Server VRM

GPU Power Delivery

Use Scenario: 12 V input, multiphase buck converter supplying core voltage to Intel Xeon or AMD EPYC CPUs.

IC Role / Device Role / Timing Role: Synchronous rectifier FET in high-side/low-side pair, operating at 600–1000 kHz with 30–50 A per phase.

Use Value: 2.0 mΩ R_DS(on) and 46 nC Q_g reduce total losses by ~18% versus prior-gen 3.5 mΩ devices, improving system efficiency from 92% to 93.5% at full load.

Use Scenario: Compact, high-current point-of-load regulator on graphics card PCB delivering 1.0–1.2 V to GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous FET in 2-phase or 3-phase interleaved buck, driven by integrated controller with 4.5 V gate output.

Use Value: 2.6 mΩ R_DS(on) at 4.5 V ensures minimal voltage drop and thermal rise under 40 A peak loads, enabling stable operation within 8 mm² board area.

AI Accelerator PSU

High-Density Telecom DC-DC

Use Scenario: 48 V to 12 V intermediate bus converter feeding multiple downstream POLs in AI training servers.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward or LLC secondary side, switching at 300–500 kHz.

Use Value: Dual-sided cooling and 1.4 °C/W R_θJC allow 25 A continuous operation at 70 °C ambient without forced airflow, reducing fan count and acoustic noise.

Use Scenario: 48 V to 5 V/3.3 V isolated DC-DC module for 5G baseband units requiring high power density and reliability.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in forward or flyback topology, operating with zero-voltage switching assist.

Use Value: 860 pF Crss and high C_dv/dt immunity prevent spurious turn-on during 100 V/µs transient events on telecom power rails, eliminating gate driver protection components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous rectifier MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF6616TR1PBF	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 32 nC; same DirectFET MT package	Higher R_DS(on) increases conduction loss but lower Q_g improves light-load efficiency	Select when thermal budget allows higher R_DS(on) and priority is reduced gate drive loss over peak efficiency
SiR626DP-T1-GE3	R_DS(on) = 1.8 mΩ @ 10 V; Q_g = 52 nC; PowerPAK® SO-8 package, 1.05 mm height	Taller profile limits dual-sided cooling; higher Q_g increases driver stress at >1 MHz	Choose only if SO-8 layout reuse is mandatory and height constraint is relaxed; verify thermal interface to PCB

Compared with IRF6616TR1PBF and SiR626DP-T1-GE3, the IRF6609TR1 uniquely combines sub-2.1 mΩ R_DS(on), 46 nC Q_g, and 0.7 mm profile with validated C_dv/dt immunity-making it optimal for space-constrained, high-frequency server and AI power stages where both conduction loss and thermal thickness are critical.

Availability

IRF6609TR1 is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery modules, and AI accelerator PSUs requiring stable component supply, long-term lifecycle support, and traceable sourcing for industrial-grade production.

Supply support for IRF6609TR1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

The IRF6609TR1 belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in computing and communications infrastructure where low R_DS(on), fast switching, and thermal robustness are essential.

FAQ

What is the maximum recommended gate drive voltage for IRF6609TR1?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive in high-current applications and 4.5 V drive in logic-level synchronous rectifier roles. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and ESD risk; 10 V is the recommended nominal gate voltage for full performance and reliability.

Can IRF6609TR1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) and matched threshold voltage (1.55–2.45 V) enable stable current sharing. Layout must use symmetrical Kelvin-source gate routing and identical trace lengths to each paralleled device to avoid gate oscillation and unequal dynamic current distribution.

Does IRF6609TR1 require a gate resistor for stability?

A small gate resistor (2–10 Ω) is recommended to dampen ringing caused by PCB inductance interacting with Q_gd and Crss, especially in high dV/dt environments. Values >10 Ω increase switching time and losses; values <2 Ω may permit overshoot exceeding V_GS(max) during fast turn-on.

Is the body diode suitable for reverse recovery in hard-switched topologies?

The body diode has t_rr = 32–48 ns and Q_rr = 26–39 nC at I_F = 25 A, making it suitable for synchronous rectification in hard-switched buck converters up to 1 MHz. However, zero-voltage switching (ZVS) or active clamp techniques are advised above 500 kHz to minimize recovery loss and EMI.

IRF6609TR1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: DirectFET™ Isometric MT

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 2mOhm @ 31A, 10V

Vgs(th) (Max) @ Id:: 2.45V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 4.5 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6290 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta), 89W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DIRECTFET™ MT

IRF6609TR1 FAQ

1.How can I place an order for IRF6609TR1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF6609TR1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF6609TR1 reliable?

The price and inventory of IRF6609TR1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF6609TR1 is usually 5 days.

3.What payment methods are accepted for IRF6609TR1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF6609TR1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF6609TR1?

IRF6609TR1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF6609TR1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF6609TR1?

For technical support, including IRF6609TR1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF6609TR1 requirements.

6.How does Aetrix verify that IRF6609TR1 is sourced from the original manufacturer or authorized distributors?

All IRF6609TR1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF6609TR1 meets industry standards.

7.What is the process for return or replacement of IRF6609TR1?

All IRF6609TR1 units undergo pre-shipment inspection (PSI). If there is an issue with IRF6609TR1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF6609TR1 part is unused and in its original packaging.

Return procedure for IRF6609TR1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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