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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR4104TR

Name: IRFR4104TR
Brand: Infineon Technologies
SKU: IRFR4104TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR4104TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR4104TR.pdf

Description:: MOSFET N-CH 40V 42A DPAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFR4104TR from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in D-Pak (TO-252) package, rated for 40 V V_DS, 58 A continuous drain current at T_C = 25°C, and 11.5 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-efficiency synchronous rectifier or low-side switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR4104TR datasheet, IRFR4104TR pinout, IRFR4104TR application, or IRFR4104TR equivalent, key selection criteria include its 40 V blocking voltage, 58 A thermal-limited current capability, D-Pak thermal performance, logic-level gate drive compatibility (V_GS(th) max 3.0 V), and suitability for high-frequency switching up to 500 kHz.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted source metallization to achieve low R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage range (1.0–3.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting.

The device features fully avalanche-rated operation (E_AS = 170 mJ at T_J = 25°C), integrated body diode with soft recovery (t_rr = 55 ns), and guaranteed 100% UIS testing per production lot - critical for inductive load switching reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum drain-source blocking voltage; defines safe operating range in 12 V/24 V automotive and industrial bus applications.
I_D (continuous)	58 A @ T_C = 25°C - Thermal limit under heatsink-mounted condition; supports >30 W conduction loss handling in compact layouts.
R_DS(on) (typ)	11.5 mΩ @ V_GS = 10 V - Enables <0.4 W conduction loss at 6 A; critical for efficiency in battery-powered systems.
V_GS(th)	1.0–3.0 V - Logic-level gate threshold; ensures full enhancement with standard 3.3 V GPIO or PWM drivers.
Q_g (typ)	42 nC @ V_GS = 10 V - Determines gate drive power requirement; compatible with low-current gate drivers like TC4427.
E_AS	170 mJ @ T_J = 25°C - Rated single-pulse avalanche energy; supports robust operation during inductive turn-off transients.

Pinout & Package

Package: D-Pak (TO-252), surface-mount, single-die, isolated tab (drain-connected). Thermal resistance R_θJA = 62°C/W (standard PCB layout, 1 in² copper).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects directly to ground plane or current-sense resistor.
Pin 2 (Gate)	Control input	High-impedance MOS gate; requires <100 pF Miller capacitance management for fast switching.
Pin 3 (Drain)	Power output	Internally bonded to exposed copper pad; must be routed to high-current trace or thermal pad.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V - eliminates need for gate driver ICs in 5 V control systems.
100% UIS tested	Every unit validated for unclamped inductive switching - ensures field reliability in motor and solenoid loads.
Low Q_gd/Q_g ratio	0.29 - reduces Miller-induced shoot-through risk in half-bridge configurations.
Enhanced body diode	t_rr = 55 ns, Q_rr = 42 nC - minimizes reverse recovery loss in synchronous rectification.

Applications

Brushless DC Motor Control

Automotive LED Headlamp Driver

Use Scenario: Low-side switching in 3-phase BLDC inverter for e-bike or power tool drives.

IC Role / Device Role / Timing Role: N-channel power switch in each leg's low-side position; commutated at 10–20 kHz.

Use Value: 11.5 mΩ R_DS(on) limits conduction loss to <0.4 W at 6 A phase current, enabling passive cooling.

Use Scenario: PWM-controlled current sink for adaptive front-lighting system (AFS) LED arrays.

IC Role / Device Role / Timing Role: High-duty-cycle, high-repetition-rate switch regulating 2–5 A LED strings from 12 V battery rail.

Use Value: Logic-level V_GS(th) allows direct MCU GPIO control; 58 A rating supports surge tolerance during cold-start inrush.

Server VRM Synchronous Rectifier

Industrial PLC Output Module

Use Scenario: Secondary-side synchronous rectification in 48 V → 12 V intermediate bus converter.

IC Role / Device Role / Timing Role: Fast-switching low-side rectifier replacing Schottky diode; driven by gate signal synchronized to primary FET.

Use Value: 55 ns t_rr and soft recovery reduce EMI vs. standard diodes; 42 nC Q_g enables <100 ns turn-on with 1 A driver.

Use Scenario: Solid-state replacement for electromechanical relay in 24 V DC digital output module.

IC Role / Device Role / Timing Role: Load switch isolating field devices (valves, sensors) from controller backplane.

Use Value: 170 mJ E_AS withstands inductive kickback from 24 V solenoids; TO-252 footprint simplifies PCB rework vs. TO-220.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 40 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10L	R_DS(on) = 14 mΩ @ 10 V; higher gate charge (72 nC); same D-Pak package.	Lower switching efficiency above 200 kHz due to higher Q_g.	Prefer when cost sensitivity outweighs 12% conduction loss penalty and layout space permits larger gate driver.
IXTP40N10T	R_DS(on) = 12.5 mΩ @ 10 V; TO-220 package; no logic-level gate (V_GS(th) = 2–4 V).	Requires external gate pull-up for reliable 3.3 V drive; less suitable for dense SMT layouts.	Choose only if through-hole assembly is mandated or thermal mass of TO-220 improves long-duration pulse handling.

Compared with STP40NF10L and IXTP40N10T, IRFR4104TR delivers superior combination of logic-level drive, lowest R_DS(on), and D-Pak thermal-mechanical fit - making it optimal for space-constrained, high-efficiency 12–24 V switching applications requiring minimal gate drive overhead.

Availability

IRFR4104TR is available at Aetrix Electronics and suitable for brushless DC motor control, automotive LED lighting, server VRM synchronous rectification, and industrial PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for IRFR4104TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® product line was originally developed by International Rectifier and continues under Infineon to deliver high-reliability, high-efficiency power MOSFETs optimized for switching power supplies, motor drives, and battery-powered systems.

FAQ

Is IRFR4104TR suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) specified from 1.0 V to 3.0 V and full enhancement achieved at V_GS ≥ 4.5 V, IRFR4104TR reliably switches on using 3.3 V GPIO outputs when paired with appropriate gate resistor (e.g., 10 Ω series) and layout minimizing parasitic inductance.

What is the maximum recommended PCB copper area for thermal performance?

For optimal R_θJA = 62°C/W, use ≥1 in² (645 mm²) of 2-oz copper connected to the drain pad via ≥6 thermal vias (0.3 mm diameter, spaced ≤2 mm apart). Larger copper areas further reduce junction temperature but yield diminishing returns beyond 2 in².

Does IRFR4104TR have avalanche ruggedness certification?

Yes. Every production lot undergoes 100% unclamped inductive switching (UIS) testing per JEDEC JESD24-11. The rated single-pulse avalanche energy is 170 mJ at T_J = 25°C, with derating to 85 mJ at T_J = 125°C - documented in Infineon's official datasheet Rev. A2.

Can IRFR4104TR replace IRFZ44N in existing designs?

Yes, with caveats: both are 40 V N-channel MOSFETs in different packages (D-Pak vs. TO-220). IRFR4104TR offers lower R_DS(on) (11.5 mΩ vs. 28 mΩ) and logic-level drive, but requires PCB redesign for surface-mount layout and thermal pad connection. Gate drive timing remains compatible.

IRFR4104TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR4104TR FAQ

1.How can I place an order for IRFR4104TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR4104TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR4104TR reliable?

The price and inventory of IRFR4104TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR4104TR is usually 5 days.

3.What payment methods are accepted for IRFR4104TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR4104TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR4104TR?

IRFR4104TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR4104TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR4104TR?

For technical support, including IRFR4104TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR4104TR requirements.

6.How does Aetrix verify that IRFR4104TR is sourced from the original manufacturer or authorized distributors?

All IRFR4104TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR4104TR meets industry standards.

7.What is the process for return or replacement of IRFR4104TR?

All IRFR4104TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFR4104TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR4104TR part is unused and in its original packaging.

Return procedure for IRFR4104TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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