Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFHM830TR2PBF

Name: IRFHM830TR2PBF
Brand: Infineon Technologies
SKU: IRFHM830TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFHM830TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFHM830TR2PBF.pdf

Description:: MOSFET N-CH 30V 21A PQFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:5,986

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFHM830TR2PBF from Infineon Technologies is a 30 V, 77 A (T_C(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 3.3 × 3.3 mm package, featuring 3.8 mΩ R_DS(on) @ V_GS = 10 V, 15 nC typical Q_g, and 2.5 Ω typical gate resistance - optimized for high-efficiency battery-operated DC motor inverters and synchronous rectification.

For engineers reviewing the IRFHM830TR2PBF datasheet, IRFHM830TR2PBF pinout, IRFHM830TR2PBF application, or IRFHM830TR2PBF equivalent, key selection criteria include low-profile thermal performance (R_θJC(Bottom) = 3.4 °C/W), MSL1 industrial qualification, 100% R_g testing, and compatibility with standard SMT assembly processes.

Technical Context

This device employs Infineon's HEXFET® Trench technology to deliver low conduction loss and fast switching in compact PQFN packaging. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive, while Q_gd = 5.0 nC and Q_sw = 7.0 nC support high-frequency PWM operation up to 500 kHz in motor control stages.

The integrated body diode exhibits V_SD = 1.0 V @ I_S = 20 A and t_rr = 17–26 ns, enabling efficient synchronous rectification and unclamped inductive switching with E_AS = 82 mJ (single-pulse avalanche rated). Thermal design leverages bottom-side copper exposure for direct PCB heat sinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - supports 24 V nominal battery systems with 25 % headroom for transients
R_DS(on) max @ V_GS = 10 V	3.8 mΩ - enables <1.5 W conduction loss at 77 A continuous drain current
Q_g typical	15 nC - reduces gate driver power demand and enables 100+ kHz switching with low gate loss
I_D @ T_C(Bottom) = 25°C	77 A - defines maximum continuous current under PCB-mounted thermal conditions
R_θJC(Bottom)	3.4 °C/W - allows direct junction-to-PCB thermal path for high-power density layouts
t_rr & Q_rr	17–26 ns / 23–35 nC - minimizes reverse recovery loss in synchronous buck and half-bridge topologies
V_GS(th)	1.35–2.35 V - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs

Pinout & Package

PQFN 3.3 × 3.3 mm package with exposed drain pad (D) on bottom side for thermal and electrical connection; top-side terminals are Gate (G), Source (S), and Drain (D) - industry-standard 3-pin layout with no separate Kelvin source.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts 0–20 V drive; 2.5 Ω internal R_g stabilizes switching edge rate
S	Source reference node	Common return for gate drive and load current; tied to PCB ground plane
D	Drain output terminal	Exposed bottom copper pad - must be soldered to large thermal pad for R_θJC = 3.4 °C/W

Key Features

Feature	Design Value
Low R_DS(on) (< 3.8 mΩ)	Reduces I²R conduction loss by >30 % vs. legacy SO-8 MOSFETs at same current
Low-profile PQFN (< 1.0 mm height)	Enables ultra-thin motor controller modules and wearable power stages
100 % R_g tested	Guarantees consistent gate charge behavior across production lots for predictable timing
MSL1 industrial qualification	Supports reflow-compatible manufacturing without moisture sensitivity concerns
RoHS-compliant, halogen-free	Meets IPC-J-STD-020D and JEDEC JESD22-A110 requirements for green electronics

Applications

Battery-Powered DC Motor Inverter

High-Density Synchronous Buck Converter

Use Scenario: 24 V BLDC motor drive in cordless power tools with 10–30 kHz PWM.

IC Role / Device Role / Timing Role: High-side/low-side switching element in 3-phase inverter bridge; handles 77 A peak phase current.

Use Value: 3.8 mΩ R_DS(on) and 7.0 nC Q_sw reduce total power loss to <2.1 W per FET at 20 A RMS, extending battery runtime.

Use Scenario: 12 V → 1.2 V, 40 A point-of-load regulator in telecom baseband units.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of multiphase buck stage; operates at 300–500 kHz.

Use Value: 1.0 V V_SD and 17 ns t_rr cut body-diode conduction loss by 65 % versus Schottky alternatives.

Automotive Body Control Module (BCM)

Industrial PLC Output Driver

Use Scenario: 12 V load switch for LED matrix lighting and solenoid actuation in Class A vehicles.

IC Role / Device Role / Timing Role: Low-side power switch with integrated avalanche energy rating (E_AS = 82 mJ).

Use Value: Withstands inductive kickback from 20 A solenoids without external snubbers, reducing BOM count.

Use Scenario: 24 V digital output module driving 0.5–2 A industrial sensors and valves.

IC Role / Device Role / Timing Role: Protected high-current output stage with overtemperature and short-circuit detection.

Use Value: R_θJC(Bottom) = 3.4 °C/W enables full 77 A derating down to 49 A at T_C = 100°C - supports sealed enclosure operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB036N04LGATMA1	40 V V_DSS, 3.6 mΩ R_DS(on), TO-263-7 package	Larger footprint, higher thermal mass; suited for higher-voltage 36 V systems	Select when system requires >30 V transient margin or higher avalanche ruggedness
SI7850DP-T1-GE3	30 V V_DSS, 4.2 mΩ R_DS(on), 5×6 mm PowerPAK SO-8	Higher R_θJA (46 °C/W), no bottom-side thermal pad	Choose only if existing PCB uses SO-8 footprint and thermal budget permits +1.2 W loss

Compared with IPB036N04LGATMA1 and SI7850DP-T1-GE3, IRFHM830TR2PBF delivers superior power density (3.3 × 3.3 mm, <1.0 mm height) and lowest R_θJC(Bottom) (3.4 °C/W), making it optimal for space-constrained, thermally aggressive motor and POL applications where board area and thermal resistance are critical.

Availability

IRFHM830TR2PBF is available at Aetrix Electronics and suitable for battery-powered motor drives, high-density DC-DC converters, automotive BCMs, and industrial PLC output stages requiring stable component supply and long-term lifecycle support.

Supply support for IRFHM830TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® Trench MOSFET product line, engineered for high-current, high-frequency switching in compact, thermally efficient packages targeting portable and automotive power systems.

FAQ

What is the maximum continuous drain current for IRFHM830TR2PBF under PCB-mounted conditions?

The maximum continuous drain current is 77 A when case temperature at the bottom thermal pad (T_C(Bottom)) is maintained at 25°C. This rating assumes full copper pour under the exposed drain pad and accounts for R_θJC(Bottom) = 3.4 °C/W. At T_C(Bottom) = 100°C, the rating derates to 49 A per the datasheet's Fig 9.

Does IRFHM830TR2PBF support 3.3 V logic-level gate drive?

Yes - its gate threshold voltage range (1.35–2.35 V) and guaranteed R_DS(on) of 6.0 mΩ @ V_GS = 4.5 V confirm robust turn-on with 3.3 V microcontrollers. However, full 3.8 mΩ performance requires ≥10 V gate drive; for 3.3 V systems, verify actual R_DS(on) at operating current using Fig 12.

How is thermal performance validated for this PQFN package?

Thermal performance is validated via JEDEC JESD51-14 standards using a cold plate setup with the bottom thermal pad soldered to a 2-layer 2 oz Cu PCB. The specified R_θJC(Bottom) = 3.4 °C/W reflects junction-to-PCB interface resistance measured under controlled 25°C ambient and 100% pad coverage - not simulated or estimated.

Is IRFHM830TR2PBF suitable for avalanche-rated operation?

Yes - it is rated for single-pulse avalanche energy (E_AS) of 82 mJ at T_J = 25°C, verified per JEDEC JESD24-1. This supports safe operation during inductive load switching without external clamping, provided peak current (I_AR = 20 A) and pulse duration remain within SOA limits shown in Fig 8.

IRFHM830TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 3.8mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 31 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2155 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (3x3)

IRFHM830TR2PBF FAQ

1.How can I place an order for IRFHM830TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFHM830TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFHM830TR2PBF reliable?

The price and inventory of IRFHM830TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFHM830TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFHM830TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFHM830TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFHM830TR2PBF?

IRFHM830TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFHM830TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFHM830TR2PBF?

For technical support, including IRFHM830TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFHM830TR2PBF requirements.

6.How does Aetrix verify that IRFHM830TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFHM830TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFHM830TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFHM830TR2PBF?

All IRFHM830TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFHM830TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFHM830TR2PBF part is unused and in its original packaging.

Return procedure for IRFHM830TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…