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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Power Dissipation (Max)	Operating Temperature	Grade	Qualification	Mounting Type	Supplier Device Package
IRFS33N15DPBF MOSFET N-CH 150V 33A D2PAK Infineon Technologies	2,707	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	150 V	33A (Tc)	10V	56mOhm @ 20A, 10V	5.5V @ 250µA	90 nC @ 10 V	±30V	2020 pF @ 25 V	-	3.8W (Ta), 170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3704SPBF MOSFET N-CH 20V 77A D2PAK Infineon Technologies	7,838	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	77A (Tc)	4.5V, 10V	9mOhm @ 15A, 10V	3V @ 250µA	19 nC @ 4.5 V	±20V	1996 pF @ 10 V	-	87W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL2910SPBF MOSFET N-CH 100V 55A D2PAK Infineon Technologies	7,829	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	100 V	55A (Tc)	4V, 10V	26mOhm @ 29A, 10V	2V @ 250µA	140 nC @ 5 V	±16V	3700 pF @ 25 V	-	3.8W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRLR3715PBF MOSFET N-CH 20V 54A DPAK Infineon Technologies	5,939	RFQ	Datasheet	HEXFET®	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	54A (Tc)	4.5V, 10V	14mOhm @ 26A, 10V	3V @ 250µA	17 nC @ 4.5 V	±20V	1060 pF @ 10 V	-	3.8W (Ta), 71W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	TO-252AA (DPAK)
IRFS31N20DPBF MOSFET N-CH 200V 31A D2PAK Infineon Technologies	4,209	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	200 V	31A (Tc)	10V	82mOhm @ 18A, 10V	5.5V @ 250µA	107 nC @ 10 V	±30V	2370 pF @ 25 V	-	3.1W (Ta), 200W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRL3102SPBF MOSFET N-CH 20V 61A D2PAK Infineon Technologies	9,229	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	20 V	61A (Tc)	4.5V, 7V	13mOhm @ 37A, 7V	700mV @ 250µA (Min)	58 nC @ 4.5 V	±10V	2500 pF @ 15 V	-	89W (Tc)	-55°C ~ 150°C (TJ)	-	-	Surface Mount	D2PAK
IRF3708SPBF MOSFET N-CH 30V 62A D2PAK Infineon Technologies	7,518	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	2.8V, 10V	12mOhm @ 15A, 10V	2V @ 250µA	24 nC @ 4.5 V	±12V	2417 pF @ 15 V	-	87W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK
IRF3708PBF MOSFET N-CH 30V 62A TO220AB Infineon Technologies	7,904	RFQ	Datasheet	HEXFET®	TO-220-3	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	62A (Tc)	2.8V, 10V	12mOhm @ 15A, 10V	2V @ 250µA	24 nC @ 4.5 V	±12V	2417 pF @ 15 V	-	87W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	TO-220AB
IRLU2703PBF MOSFET N-CH 30V 23A IPAK Infineon Technologies	6,965	RFQ	Datasheet	HEXFET®	TO-251-3 Short Leads, IPAK, TO-251AA	Tube	Obsolete	N-Channel	MOSFET (Metal Oxide)	30 V	23A (Tc)	4.5V, 10V	45mOhm @ 14A, 10V	1V @ 250µA	15 nC @ 4.5 V	±16V	450 pF @ 25 V	-	45W (Tc)	-55°C ~ 175°C (TJ)	-	-	Through Hole	IPAK (TO-251AA)
IRL3705NSPBF MOSFET N-CH 55V 89A D2PAK Infineon Technologies	9,116	RFQ	Datasheet	HEXFET®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Discontinued at Digi-Key	N-Channel	MOSFET (Metal Oxide)	55 V	89A (Tc)	4V, 10V	10mOhm @ 46A, 10V	2V @ 250µA	98 nC @ 5 V	±16V	3600 pF @ 25 V	-	3.8W (Ta), 170W (Tc)	-55°C ~ 175°C (TJ)	-	-	Surface Mount	D2PAK

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