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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3708SPBF

Name: IRF3708SPBF
Brand: Infineon Technologies
SKU: IRF3708SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3708SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRF3708SPBF.pdf

Description:: MOSFET N-CH 30V 62A D2PAK

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3708SPBF from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, supports 248 A pulsed drain current, and features fully characterized avalanche capability (213 mJ E_AS) for robust operation in telecom and industrial SMPS.

For engineers reviewing the IRF3708SPBF datasheet, IRF3708SPBF pinout, IRF3708SPBF application, or IRF3708SPBF equivalent, key selection criteria include low gate charge (24 nC), ultra-low R_DS(on) at logic-level drive, fast switching (t_r = 50 ns), and thermal performance validated on FR-4 PCBs with defined footprint per AN-994.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free design to minimize conduction and switching losses simultaneously. Its gate threshold voltage (0.6–2.0 V) enables reliable turn-on with 3.3 V and 4.5 V microcontroller outputs, while the 52 nC total gate charge (Q_g) ensures efficient drive in high-frequency buck and forward topologies.

The device integrates a robust body diode with 41–65 ns reverse recovery time (t_rr) and 64–105 nC Q_rr, enabling stable synchronous rectification without external Schottky replacement in isolated DC-DC stages operating up to 500 kHz. Thermal resistance R_θJA is 40 °C/W on standard 1"² FR-4 PCB mount.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom power supplies
R_DS(on) @ 4.5 V	12 mΩ - Enables <1.2 W conduction loss at 10 A continuous drain current with logic-level gate drive
I_D @ T_C = 25°C	62 A - Supports high-current output stages in server VRMs and industrial DC-DC modules
Q_g	24 nC - Reduces gate driver power demand and allows use of low-cost SOT-23 MOSFET drivers
E_AS	213 mJ - Withstands unclamped inductive switching events in hard-switched flyback and forward converters
t_r/t_f	50 ns / 3.7 ns - Fast edge rates support >300 kHz switching frequencies with minimal overlap loss
R_θJA (PCB mount)	40 °C/W - Enables 61 W power dissipation at 70°C case temperature without heatsink in compact layouts

Pinout & Package

IRF3708SPBF uses the industry-standard TO-220AB package with 4-pin configuration (G-D-S-D), featuring dual drain leads for reduced source inductance and improved current sharing in parallel configurations.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Accepts 0–12 V logic-level signals; 24 nC Q_g ensures full enhancement at 4.5 V with minimal Miller effect
2 (Drain)	Main current path (high-side)	Connected to primary-side rail or transformer secondary; rated for 30 V blocking and 248 A pulsed current
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; low-inductance layout critical for EMI control
4 (Drain)	Secondary current path (low-side)	Parallel drain connection reduces effective R_DS(on) and improves thermal spreading across package backside

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12 mΩ - Eliminates need for gate boosters in 3.3 V/5 V controller-based designs
Fully characterized avalanche rating	213 mJ single-pulse energy - Allows safe operation in non-zero-voltage-switching topologies without snubbers
Low gate-to-drain charge (Q_gd)	5.8 nC - Minimizes Miller-induced shoot-through risk during hard switching
Optimized body diode recovery	t_rr = 41–65 ns, Q_rr = 64–105 nC - Enables stable synchronous rectification without external diode in 12 V output converters
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 - Supports lead-free reflow assembly without preconditioning

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48 V input to 12 V/24 V isolated output in base station power modules.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in active-clamp forward topology operating at 250–300 kHz.

Use Value: 12 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 20 mΩ devices, improving full-load efficiency to >94%.

Use Scenario: High-current 24 V output stage in programmable logic controller (PLC) power supply.

IC Role / Device Role / Timing Role: Secondary-side switch in half-bridge LLC resonant converter with 300 kHz fundamental frequency.

Use Value: Dual-drain TO-220AB layout lowers source inductance, reducing voltage spikes during 248 A pulsed current transitions.

Server VRMs

High-Frequency Buck Converters

Use Scenario: 12 V input to 1.2 V/60 A point-of-load regulator for CPU core supply.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck converter with 500 kHz switching frequency.

Use Value: 24 nC Q_g and 50 ns rise time enable precise phase alignment and minimize dead-time losses across 4+ phases.

Use Scenario: 24 V to 5 V step-down for industrial I/O module power rail.

IC Role / Device Role / Timing Role: Main switching FET in synchronous buck with integrated controller (e.g., ISL6263).

Use Value: 4.5 V logic-level turn-on allows direct drive from controller's gate output, eliminating level-shifter components.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 45 mΩ R_DS(on) @ 10 V - higher voltage rating but lower current and higher on-resistance	Designed for 100–200 V input industrial converters, not optimized for 24–48 V telecom SMPS	Select only when higher breakdown voltage is required; not suitable for direct replacement due to 3.7× higher R_DS(on)
IRL3705ZPBF	55 V V_DS, 65 A I_D, 12 mΩ R_DS(on) @ 4.5 V - same logic-level drive but higher V_DS and larger Q_g (44 nC)	Targeted at 48 V automotive and battery-powered systems where 55 V margin is needed	Acceptable substitute if board layout accommodates higher gate drive power and system requires >30 V transient tolerance

Compared with STP30NF20 and IRL3705ZPBF, IRF3708SPBF offers optimal balance of low-voltage robustness (30 V), ultra-low on-resistance at logic-level drive, and minimal gate charge-making it uniquely suited for space-constrained, high-efficiency telecom and industrial DC-DC converters below 48 V input.

Availability

IRF3708SPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, industrial SMPS, and server VRMs requiring stable component supply with full traceability and long-term lifecycle support.

Supply support for IRF3708SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRF3708SPBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-frequency, high-efficiency switching in isolated and non-isolated DC-DC converters used in telecom infrastructure and industrial automation equipment.

FAQ

What is the maximum junction temperature for continuous operation?

The IRF3708SPBF has a specified junction temperature range of –55°C to +175°C. For continuous operation under rated current, thermal design must ensure junction temperature remains ≤175°C, typically achieved using the 40 °C/W R_θJA (PCB mount) value with appropriate copper area and airflow per AN-994 layout guidelines.

Is IRF3708SPBF suitable for synchronous rectification in flyback converters?

Yes-its 41–65 ns reverse recovery time and 64–105 nC Q_rr support stable synchronous rectification in discontinuous conduction mode (DCM) flyback converters up to 150 kHz. The low V_SD (0.88 V typ. at 31 A) further minimizes conduction loss compared to external Schottky diodes.

Does IRF3708SPBF require a gate resistor for EMI control?

A gate resistor (typically 1–10 Ω) is recommended to dampen ringing caused by parasitic inductance in the gate loop. The device's 5.8 nC Q_gd and 2417 pF C_iss make it sensitive to fast edge excitation; proper gate resistance selection balances switching speed and EMI compliance per CISPR-22 Class B limits.

Can IRF3708SPBF be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) (see Fig 4) ensures inherent current sharing. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and shared thermal interface. Derating to 80% of total rated current per device is advised for reliability in high-power applications.

IRF3708SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRF3708SPBF FAQ

1.How can I place an order for IRF3708SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708SPBF reliable?

The price and inventory of IRF3708SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708SPBF is usually 5 days.

3.What payment methods are accepted for IRF3708SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708SPBF?

IRF3708SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708SPBF?

For technical support, including IRF3708SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708SPBF requirements.

6.How does Aetrix verify that IRF3708SPBF is sourced from the original manufacturer or authorized distributors?

All IRF3708SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708SPBF meets industry standards.

7.What is the process for return or replacement of IRF3708SPBF?

All IRF3708SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708SPBF part is unused and in its original packaging.

Return procedure for IRF3708SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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