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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRL2910SPBF

Name: IRL2910SPBF
Brand: Infineon Technologies
SKU: IRL2910SPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRL2910SPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRL2910SPBF.pdf

Description:: MOSFET N-CH 100V 55A D2PAK

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Product details

Overview

IRL2910SPBF from Infineon Technologies (formerly International Rectifier) is a logic-level N-channel enhancement-mode power MOSFET in D2Pak (TO-262) package, rated for 100V V_DSS, 55A continuous drain current at T_C = 25°C, and ultra-low 0.026Ω R_DS(on) at V_GS = 10V. It is designed for high-efficiency DC-DC converters, motor control H-bridges, and industrial power switching where low gate drive voltage (≤5V) and fast switching are critical.

For engineers reviewing the IRL2910SPBF datasheet, IRL2910SPBF pinout, IRL2910SPBF application, or IRL2910SPBF equivalent, key selection criteria include its logic-level gate threshold (1.0–2.0V), 140nC total gate charge, 5.0V/ns diode recovery dv/dt rating, avalanche energy capability (520mJ single-pulse), and thermal resistance (0.75°C/W junction-to-case).

Technical Context

This fifth-generation HEXFET device uses advanced silicon processing to minimize conduction loss while maintaining rugged unclamped inductive switching performance. Its optimized gate charge profile (Q_gd = 81nC, Q_gs = 20nC) supports efficient hard-switching up to 100kHz in synchronous buck topologies.

The integrated body diode exhibits 240–350ns reverse recovery time and 1.8–2.7µC Q_rr under 100A/µs di/dt, enabling reliable operation in freewheeling paths without external snubbers. Fully avalanche-rated design ensures robustness against transient overvoltage during inductive load commutation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100V - Maximum blocking voltage before avalanche onset; suitable for 48V bus systems with 2× safety margin.
R_DS(on) @ V_GS = 10V	0.026Ω - Conduction loss of 41.6W at 40A, enabling high-current PCB-mount designs without heatsink in short-duty cycles.
I_D @ T_C = 25°C	55A - Continuous current capability when case temperature is maintained at 25°C via heatsinking or forced air.
Q_g	140nC - Total gate charge determines driver strength requirement; needs ≥2A peak gate current for 100ns turn-on.
E_AS	520mJ - Single-pulse avalanche energy rating confirms reliability in unclamped inductive switching (e.g., relay/motor coil discharge).
dv/dt Rating	5.0V/ns - Maximum rate of voltage rise across drain-source during diode recovery; limits parasitic turn-on risk in high-dV/dt environments.
T_J Range	−55°C to +175°C - Extended junction temperature range supports operation in automotive engine compartments and industrial enclosures.

Pinout & Package

The IRL2910SPBF is housed in a surface-mount D2Pak (TO-262) package with exposed drain pad for thermal and electrical connection. The package provides lowest R_θJC (0.75°C/W) among standard SMT power packages and supports up to 200W power dissipation at T_C = 25°C.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically and thermally connected to large copper pad; must be soldered to PCB ground plane or heatsink for thermal management.
Source	Reference node for gate drive and current sensing	Low-inductance source connection essential for stable gate control; used for Kelvin sensing in precision current monitoring.
Gate	Control terminal for channel modulation	Logic-compatible input (V_GS(th) = 1.0–2.0V); requires low-impedance drive (<1.4Ω) to achieve specified 11ns t_d(on) and 55ns t_f.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS = 4.0V (R_DS(on) = 0.040Ω), enabling direct interface with 3.3V/5V microcontrollers without level-shifting.
Ultra-low R_DS(on)	0.026Ω at V_GS = 10V reduces conduction losses by >35% vs. legacy 100V MOSFETs, improving efficiency in 12–48V power stages.
Fully avalanche rated	Guaranteed 520mJ single-pulse E_AS allows safe operation in inductive switching without external clamping circuits.
Fast diode recovery	240ns typical t_rr and 5.0V/ns dv/dt rating reduce switching losses and EMI in synchronous rectification and half-bridge freewheeling.
Lead-free construction	RoHS-compliant Pb-free plating (marked "P" in date code) meets IPC-J-STD-020 moisture sensitivity level 3 requirements.

Applications

Motor Drive H-Bridge

DC-DC Synchronous Buck

Use Scenario: Bidirectional 24V brushed DC motor control in automated gate actuators with PWM frequency ≥20kHz.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 45A peak load current with <100ns dead-time tolerance.

Use Value: Low R_DS(on) minimizes I²R heating during stall conditions; logic-level gate enables direct STM32 GPIO drive.

Use Scenario: 48V-to-12V 100A point-of-load converter in telecom base station power supply.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side; switches at 300kHz with 50% duty cycle.

Use Value: 0.026Ω R_DS(on) cuts conduction loss by 6.5W vs. 0.040Ω alternative; fast t_rr prevents shoot-through during body-diode conduction.

Industrial Solid-State Relay

UPS Inverter Stage

Use Scenario: 100V AC line-switching SSR replacing electromechanical relays in HVAC control panels.

IC Role / Device Role / Timing Role: Main power switch with zero-crossing detection circuitry; conducts 30A RMS current.

Use Value: Avalanche rating eliminates need for MOV clamping on inductive loads; TO-262 package supports conformal coating for harsh environments.

Use Scenario: 3-phase inverter stage in 5kVA online UPS converting 400V DC bus to 230V AC output.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid topology; handles 60A peak phase current.

Use Value: 175°C max T_J allows derated operation at 125°C ambient; low Q_g enables gate driver IC integration without discrete buffers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF2907ZPBF	Higher R_DS(on) (0.032Ω @ 10V), higher Q_g (160nC), same D2Pak package	Slightly lower efficiency at high current; slower switching due to higher gate charge	Preferred where cost sensitivity outweighs 12% conduction loss penalty and layout space permits larger gate driver.
STP110N10F7	Lower V_DSS (100V same), lower R_DS(on) (0.018Ω), but non-logic-level (V_GS(th) = 2.0–4.0V)	Requires 10V gate drive; unsuitable for 3.3V MCU direct drive	Select when system uses dedicated 12V gate supply and maximum efficiency at 50A+ is prioritized over logic compatibility.

Compared with IRL2910SPBF, IRF2907ZPBF trades efficiency for cost and STP110N10F7 improves conduction loss but sacrifices logic-level operation-making IRL2910SPBF optimal for 5V-controlled, thermally constrained, high-reliability industrial switching.

Availability

IRL2910SPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and solid-state relays requiring stable component supply, long-term lifecycle support, and RoHS-compliant lead-free assembly.

Supply support for IRL2910SPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon-based power devices.

The IRL2910SPBF belongs to Infineon's HEXFET® logic-level MOSFET product line, engineered for high-current, low-voltage gate drive applications including battery-powered tools, solar inverters, and programmable logic controller (PLC) output stages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRL2910SPBF supports 39A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the D2Pak package and requires adequate PCB copper area or heatsink attachment to maintain safe junction temperature below 175°C.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 1.4Ω as referenced in switching time test conditions) is required to dampen ringing caused by gate-drain capacitance (C_rss = 330pF) and PCB trace inductance. Omitting it risks oscillation during turn-on/turn-off and can exceed dV/dt limits during diode recovery.

Can the IRL2910SPBF replace the through-hole IRL2910L in the same footprint?

No-the IRL2910SPBF uses the surface-mount D2Pak (TO-262) package, while the IRL2910L uses the through-hole TO-262 variant with different leadform and soldering requirements. Though electrically identical, mechanical mounting, thermal path, and reflow profile differ significantly; board redesign is required for substitution.

Is the body diode suitable for synchronous rectification?

Yes-the body diode has characterized t_rr (240–350ns) and Q_rr (1.8–2.7µC), making it usable in synchronous rectification at ≤300kHz. However, its forward voltage (1.3V at 29A) is higher than Schottky alternatives, so efficiency gain depends on duty cycle and switching loss trade-off.

IRL2910SPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 55A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4V, 10V

Rds On (Max) @ Id, Vgs:: 26mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 140 nC @ 5 V

Vgs (Max):: ±16V

Input Capacitance (Ciss) (Max) @ Vds:: 3700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRL2910SPBF FAQ

1.How can I place an order for IRL2910SPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRL2910SPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRL2910SPBF reliable?

The price and inventory of IRL2910SPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRL2910SPBF is usually 5 days.

3.What payment methods are accepted for IRL2910SPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRL2910SPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRL2910SPBF?

IRL2910SPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRL2910SPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRL2910SPBF?

For technical support, including IRL2910SPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRL2910SPBF requirements.

6.How does Aetrix verify that IRL2910SPBF is sourced from the original manufacturer or authorized distributors?

All IRL2910SPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRL2910SPBF meets industry standards.

7.What is the process for return or replacement of IRL2910SPBF?

All IRL2910SPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRL2910SPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRL2910SPBF part is unused and in its original packaging.

Return procedure for IRL2910SPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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