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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRF3708PBF

Name: IRF3708PBF
Brand: Infineon Technologies
SKU: IRF3708PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRF3708PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRF3708PBF.pdf

Description:: MOSFET N-CH 30V 62A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRF3708PBF from Infineon Technologies is a 30V, 62A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB package, optimized for high-frequency synchronous rectification in isolated DC-DC converters. It delivers 12 mΩ R_DS(on) at V_GS = 4.5 V, 24.8 nC total gate charge, and 213 mJ single-pulse avalanche energy - enabling efficient telecom and industrial SMPS designs.

For engineers reviewing the IRF3708PBF datasheet, IRF3708PBF pinout, IRF3708PBF application, or IRF3708PBF equivalent, key selection criteria include low-voltage gate drive compatibility (4.5 V), ultra-low R_DS(on), fast switching (t_r = 50 ns, t_f = 3.7 ns), and robust avalanche capability - critical for high-efficiency buck and forward converter topologies.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-free die design to minimize conduction and switching losses simultaneously. Its gate threshold voltage (0.6–2.0 V) and low input capacitance (C_iss = 2417 pF) support stable operation under 4.5 V logic-level drive in synchronous rectifier stages.

The device integrates a fully characterized body diode with 41–65 ns reverse recovery time and 64–105 nC Q_rr, enabling hard-switched operation without external Schottky supplementation in mid-power DC-DC applications up to 300 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 24 V nominal input rails with 25 % margin for transient overvoltage in telecom systems
R_DS(on) @ 4.5 V	12 mΩ max - Enables <1.2 W conduction loss at 31 A continuous drain current in 12 V output converters
I_D @ T_C = 25°C	62 A - Sustains full-load current in 750 W isolated forward converters with PCB heatsinking
Q_g	24 nC - Matches standard PWM controller gate drivers (e.g., UCC2897A) without requiring external buffer stages
E_AS	213 mJ - Withstands unclamped inductive switching events in flyback and active clamp forward topologies
t_r/t_f	50 ns / 3.7 ns - Minimizes switching transition losses at 300 kHz operation with <10 ns dead-time requirements
V_GS(th)	0.6–2.0 V - Ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIOs in digital power control loops

Pinout & Package

IRF3708PBF uses the industry-standard TO-220AB package with exposed drain tab for thermal coupling to heatsinks. The lead frame features 4 terminals: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and secondary Drain (Pin 4) - enabling low-inductance Kelvin connection of source and gate return paths in high-di/dt applications.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Accepts 0–12 V logic-level signals; requires <24 nC charge for full enhancement; sensitive to ESD (±12 V absolute max)
2 - Drain	Main current path (high-side)	Connected to primary-side switch node or transformer secondary; electrically tied to metal tab for thermal conduction
3 - Source	Reference node for gate drive	Serves as local ground reference for gate driver IC; routed separately from power ground to avoid noise coupling
4 - Drain	Secondary drain terminal	Provides low-inductance parallel path for drain current; used with Pin 2 to reduce loop inductance in high-frequency layouts

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 4.5 V	12 mΩ enables >95 % efficiency in 12 V → 1.2 V VRM stages without gate boosting
Low gate charge (Q_g)	24 nC reduces driver power dissipation and allows use of integrated half-bridge drivers (e.g., IRS2007)
Characterized avalanche performance	213 mJ E_AS supports ruggedness in non-zero-voltage-switching (NZVS) topologies without snubbers
Optimized body diode	Q_rr = 64–105 nC and t_rr = 41–65 ns allow clean commutation in synchronous rectifier mode
Lead-free TO-220AB package	RoHS-compliant construction with tin-plated leads; compatible with standard wave soldering profiles per J-STD-020

Applications

Telecom DC-DC Converters

Industrial SMPS

Use Scenario: 48 V input, 12 V/30 A isolated forward converter in 19-inch rack power supplies.

IC Role / Device Role: Synchronous rectifier on secondary side, replacing Schottky diodes to reduce conduction loss.

Use Value: Cuts rectifier losses by 65 % vs. 40 V Schottky, improving full-load efficiency from 89 % to 94.2 %.

Use Scenario: 24 V input, 5 V/20 A active-clamp forward converter for PLC I/O modules.

IC Role / Device Role: Primary-side main switch operating at 250 kHz with zero-voltage switching assistance.

Use Value: 12 mΩ R_DS(on) limits conduction loss to 0.48 W at 20 A, reducing heatsink size by 40 %.

High-Frequency Buck Converters

Server VRMs

Use Scenario: 12 V input, 1.8 V/60 A multiphase buck converter for FPGA power delivery.

IC Role / Device Role: High-side switch in 3-phase interleaved topology with 500 kHz per phase.

Use Value: 3.7 ns fall time minimizes shoot-through risk during phase interleaving, enabling <10 ns dead time.

Use Scenario: 12 V input, 1.0 V/120 A two-phase buck converter for CPU core power.

IC Role / Device Role: Low-side synchronous rectifier paired with SiC high-side switch.

Use Value: Body diode Q_rr < 105 nC prevents reverse recovery oscillation when paralleled with 100 A SiC FETs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP30NF20	200 V V_DS, 30 A I_D, 35 mΩ R_DS(on) @ 10 V - higher voltage rating but lower current and higher on-resistance	Used in 100–200 V industrial motor drives, not optimized for 24–48 V telecom SMPS	Select only if system requires >100 V breakdown margin and can tolerate 2.9× higher conduction loss
IRL3713PBF	30 V V_DS, 50 A I_D, 10 mΩ R_DS(on) @ 4.5 V - lower R_DS(on) but reduced avalanche rating (120 mJ)	Targeted at battery-powered DC-DC where avalanche stress is minimal and gate drive is strictly 3.3 V	Prefer for portable equipment; avoid in telecom where unclamped inductive transients exceed 120 mJ

Compared with STP30NF20 and IRL3713PBF, IRF3708PBF uniquely balances 62 A current handling, 12 mΩ on-resistance at 4.5 V, and 213 mJ avalanche energy - making it optimal for high-reliability, high-current telecom and industrial isolated converters where both efficiency and ruggedness are mandatory.

Availability

IRF3708PBF is available at Aetrix Electronics and suitable for telecom power supplies, industrial SMPS, and high-frequency buck converters requiring stable component supply and long-term lifecycle support.

Supply support for IRF3708PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The HEXFET Power MOSFET product line targets high-efficiency switching power conversion, emphasizing low R_DS(on), fast switching, and rugged avalanche performance for telecom, server, and industrial power supply applications.

FAQ

What is the maximum continuous drain current at 70°C case temperature?

The IRF3708PBF supports 52 A continuous drain current at T_C = 70°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations (R_θJC = 1.73 °C/W) and ensures safe junction temperature operation below 175°C when mounted on a properly heatsinked TO-220 footprint with greased interface.

Does IRF3708PBF require a gate resistor for stability in high-frequency operation?

Yes - a 0.6 Ω gate resistor is used in the datasheet's switching time test circuit to control dV/dt and prevent parasitic oscillation. For 300 kHz operation, a 1–2 Ω non-inductive resistor is recommended to dampen ringing while maintaining t_r < 60 ns and t_f < 5 ns, especially when driving from low-impedance gate drivers like MIC442x series.

Can IRF3708PBF be used in linear regulator applications?

No - the device is not characterized for linear-mode operation. Its Safe Operating Area (SOA) curve shows operation is limited to pulse widths ≤10 ms at V_DS > 10 V, and R_DS(on) increases significantly above 100°C junction temperature. Linear regulation would exceed SOA limits and cause thermal runaway due to lack of internal thermal shutdown.

Is the TO-220AB package electrically insulated from the PCB mount surface?

No - the metal tab (Drain) is electrically connected to Pins 2 and 4 and is not insulated. When mounted directly to a heatsink or copper pour, the drain node becomes exposed. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) or use of an isolated-mount TO-220 variant such as IRF3708LPbF with plastic-isolated tab.

IRF3708PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 62A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 2.8V, 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 2417 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 87W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRF3708PBF FAQ

1.How can I place an order for IRF3708PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRF3708PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRF3708PBF reliable?

The price and inventory of IRF3708PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRF3708PBF is usually 5 days.

3.What payment methods are accepted for IRF3708PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRF3708PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRF3708PBF?

IRF3708PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRF3708PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRF3708PBF?

For technical support, including IRF3708PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRF3708PBF requirements.

6.How does Aetrix verify that IRF3708PBF is sourced from the original manufacturer or authorized distributors?

All IRF3708PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRF3708PBF meets industry standards.

7.What is the process for return or replacement of IRF3708PBF?

All IRF3708PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRF3708PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRF3708PBF part is unused and in its original packaging.

Return procedure for IRF3708PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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