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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS33N15DPBF

Name: IRFS33N15DPBF
Brand: Infineon Technologies
SKU: IRFS33N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS33N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS33N15DPBF.pdf

Description:: MOSFET N-CH 150V 33A D2PAK

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Product details

Overview

IRFS33N15DPBF from Infineon Technologies is a 150 V, 33 A, 0.056 Ω R_DS(on) N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters and active clamp forward topologies in telecom 48 V input systems.

For engineers reviewing the IRFS33N15DPBF datasheet, IRFS33N15DPBF pinout, IRFS33N15DPBF application, or IRFS33N15DPBF equivalent, key selection criteria include its 60 nC typical gate charge, 320 pF effective output capacitance (C_oss,eff), 130 A pulsed drain current, avalanche-rated construction (330 mJ E_AS), and lead-free RoHS-compliant packaging.

Technical Context

This MOSFET employs planar silicon process with optimized cell geometry to achieve low R_DS(on) × Q_g figure-of-merit (3.36 Ω·nC) for reduced conduction and switching losses in hard-switched SMPS. Its fully characterized C_oss vs. V_DS curve and specified C_oss,eff (320 pF) enable accurate snubberless design in resonant and quasi-resonant converters.

The device integrates a robust body diode with 150 ns reverse recovery time and 920 nC Q_rr, supporting synchronous rectification and bidirectional power flow in isolated topologies. Its ±30 V gate rating and 0.18 V/°C V_(BR)DSS temperature coefficient ensure stable operation across -55°C to +175°C junction range.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Withstands up to 150 V drain-source blocking voltage before avalanche onset.
R_DS(on) max	0.056 Ω @ V_GS = 10 V, I_D = 20 A - Enables <1.8 W conduction loss at 33 A continuous current (T_C = 25°C).
I_D cont	33 A @ T_C = 25°C - Supports high-current primary-side switching in 500–1000 W telecom PSUs.
Q_g typ	60 nC - Determines gate drive energy requirement; enables efficient operation with standard 1–2 A peak gate drivers.
C_oss,eff	320 pF - Effective output capacitance over full 0–120 V V_DS swing; critical for ZVS timing and soft-switching margin calculation.
E_AS	330 mJ - Single-pulse avalanche energy rating ensures ruggedness during unclamped inductive switching events.
R_θJC	0.90 °C/W - Junction-to-case thermal resistance enables direct heatsink mounting with predictable thermal rise under full load.

Pinout & Package

IRFS33N15DPBF uses the JEDEC-standard TO-220AB package with four leads: Gate (Pin 1), Drain (Pin 2), Source (Pin 3), and secondary Drain (Pin 4) for enhanced thermal and current-carrying capability. The metal tab is electrically connected to Drain.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control electrode	Receives 10 V logic-level gate drive; threshold voltage 3.0–5.5 V ensures reliable turn-on with standard PWM controllers.
2 - Drain	Main current path (high-side)	Connected to high-voltage rail; electrically tied to metal tab for low-inductance, high-current return path.
3 - Source	Reference node / current return	Serves as local ground reference for gate drive; requires low-impedance PCB trace to minimize switching noise coupling.
4 - Drain (redundant)	Secondary current path	Parallel drain connection improves current sharing and reduces package inductance-critical for >100 kHz switching stability.

Key Features

Feature	Design Value
Low gate-to-drain charge (Q_gd)	27 nC typ - Reduces Miller-induced switching delay and improves dv/dt immunity in high-side configurations.
Fully characterized C_oss vs. V_DS	Specified at 1.0 V, 25 V, and 120 V - Enables precise resonant tank design without empirical curve-fitting.
Avalanche-rated construction	330 mJ single-pulse E_AS - Eliminates need for external clamping circuits in flyback and forward converters.
Lead-free and RoHS compliant	Pb-free plating per JEDEC J-STD-020 - Meets global environmental compliance requirements for industrial and telecom equipment.
Enhanced body diode performance	150 ns t_rr, 920 nC Q_rr - Supports higher-frequency synchronous rectification and reduces diode conduction loss in LLC half-bridge secondaries.

Applications

Telecom 48 V Input PSU

Active Clamp Forward Converter

Use Scenario: Primary-side switch in 48 V input, 1 kW telecom power supply operating at 200–500 kHz.

IC Role / Device Role / Timing Role: High-side main switch handling full input voltage and current; operates in hard-switched mode with zero-voltage switching assist.

Use Value: Low R_DS(on) minimizes conduction loss at high duty cycle; low Q_g enables fast turn-on/turn-off to reduce overlap loss.

Use Scenario: Main switch in isolated forward converter with active clamp reset circuit for server power supplies.

IC Role / Device Role / Timing Role: Primary switch conducting during main power transfer phase; clamped during reset by auxiliary switch and capacitor.

Use Value: Avalanche rating absorbs clamp energy spikes; low C_oss,eff ensures minimal energy loss during clamp capacitor discharge/recharge cycles.

High-Frequency DC-DC Converter

Industrial Motor Drive Inverter Stage

Use Scenario: Synchronous buck converter stage stepping down 12 V to 1.2 V for FPGA core power at >1 MHz switching frequency.

IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET synchronous rectifier configuration; commutates high di/dt currents.

Use Value: Fast 21 ns fall time and low Q_gd reduce shoot-through risk; robust body diode handles reverse recovery during dead-time.

Use Scenario: Half-bridge leg in 3-phase inverter driving 750 W BLDC motor in factory automation system.

IC Role / Device Role / Timing Role: High-current switching element in bridge arm; subjected to repetitive inductive turn-off stress and regenerative braking.

Use Value: 130 A pulsed drain current supports short-term overload; 175°C max junction temperature accommodates sealed enclosure thermal limits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP33N15F6	150 V, 33 A, R_DS(on) = 0.055 Ω, Q_g = 62 nC, TO-220FP package (isolated tab)	Lower thermal resistance to heatsink due to insulated package; slightly higher gate charge	Preferred where electrical isolation between tab and heatsink is required; same footprint but different mounting torque spec.
IXTH30N15P	150 V, 30 A, R_DS(on) = 0.065 Ω, Q_g = 55 nC, TO-247AC package	Higher voltage margin (150 V), lower Q_g, but 3 A lower I_D; larger package with better thermal performance	Selected when higher gate drive efficiency is prioritized over current density; requires PCB layout change for TO-247 footprint.

Compared with STP33N15F6 and IXTH30N15P, IRFS33N15DPBF offers the best balance of current rating, gate drive efficiency, and thermal interface simplicity in TO-220AB form factor-ideal for cost-sensitive, space-constrained telecom SMPS designs requiring proven avalanche ruggedness.

Availability

IRFS33N15DPBF is available at Aetrix Electronics and suitable for telecom power supplies, active clamp forward converters, and high-frequency DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFS33N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching power conversion in telecom infrastructure, industrial SMPS, and renewable energy inverters.

FAQ

What is the maximum recommended gate drive voltage for IRFS33N15DPBF?

The absolute maximum gate-to-source voltage is ±30 V, but the device is characterized and optimized for 10 V gate drive. Operating above 12 V provides no significant R_DS(on) improvement and increases gate oxide stress risk. For reliable long-term operation, 10 V ±0.5 V is the recommended drive level per Infineon's application note AN-1001.

Can IRFS33N15DPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.18 V/°C V_(BR)DSS implies correlated on-resistance increase with temperature) enables inherent current sharing. However, matched gate drive layout (identical trace length/inductance to each gate) and Kelvin source connections are mandatory to avoid dynamic imbalance and thermal runaway.

Does IRFS33N15DPBF require a gate resistor for safe operation?

A gate resistor is required to control dV/dt and prevent parasitic oscillation. Typical values range from 5 Ω to 22 Ω depending on driver strength and layout inductance. A 10 Ω resistor is commonly used with 1–2 A peak gate drivers to achieve ~20 ns rise/fall times while limiting peak gate current to <1.2 A and suppressing ringing observed in Fig. 10b waveforms.

Is the metal tab of IRFS33N15DPBF electrically isolated?

No-the metal tab is internally connected to Pin 2 (Drain) and Pin 4 (Drain), making it live at drain potential. Electrical isolation must be achieved externally using insulating shoulder washers and thermal pads rated for ≥150 V working voltage. Mounting torque must not exceed 10 lbf·in (1.1 N·m) to avoid die cracking or internal bond wire damage.

IRFS33N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 56mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 90 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS33N15DPBF FAQ

1.How can I place an order for IRFS33N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS33N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS33N15DPBF reliable?

The price and inventory of IRFS33N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS33N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFS33N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS33N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS33N15DPBF?

IRFS33N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS33N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS33N15DPBF?

For technical support, including IRFS33N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS33N15DPBF requirements.

6.How does Aetrix verify that IRFS33N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFS33N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS33N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFS33N15DPBF?

All IRFS33N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS33N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS33N15DPBF part is unused and in its original packaging.

Return procedure for IRFS33N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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