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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFS31N20DPBF

Name: IRFS31N20DPBF
Brand: Infineon Technologies
SKU: IRFS31N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFS31N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IRFS31N20DPBF.pdf

Description:: MOSFET N-CH 200V 31A D2PAK

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Product details

Overview

IRFS31N20DPBF from Infineon Technologies is a 200V, 31A N-channel enhancement-mode Power MOSFET in TO-220AB package, optimized for high-frequency DC-DC converters including active-clamp forward topologies. It features 0.082Ω R_DS(on) at V_GS = 10V, 70nC total gate charge, and fully characterized C_oss (170pF effective) to simplify snubberless design in telecom 48V input systems.

For engineers reviewing the IRFS31N20DPBF datasheet, IRFS31N20DPBF pinout, IRFS31N20DPBF application, or IRFS31N20DPBF equivalent, key selection criteria include avalanche energy rating (420mJ), diode reverse recovery time (200–300ns), gate threshold voltage (3.0–5.5V), and thermal resistance (R_θJC = 0.75°C/W) for thermally constrained power stages.

Technical Context

This HEXFET device uses planar stripe cell structure with low gate-drain charge (Q_gd = 33–65nC) and minimized Miller effect to enable fast switching at >500kHz in isolated DC-DC converters. Its fully characterized C_oss vs. V_DS curve and effective output capacitance (170pF) support accurate zero-voltage switching (ZVS) timing analysis.

The integrated body diode exhibits 1.3V forward drop at 18A and 200–300ns reverse recovery time under di/dt = 100A/µs, enabling reliable synchronous rectification or active-clamp reset operation without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	200V - supports 48V telecom input with ≥4× safety margin against transient overvoltage
R_DS(on) max	0.082Ω @ V_GS = 10V, I_D = 18A - enables ≤5W conduction loss at 31A continuous drain current
Q_g	70–107nC - determines gate driver power requirement and switching speed in hard-switched topologies
C_oss,eff	170pF - defines resonant tank behavior during ZVS transitions in active-clamp forward converters
E_AS	420mJ - ensures single-pulse unclamped inductive switching survivability in fault conditions
t_rr	200–300ns - limits diode commutation losses and EMI generation during body-diode conduction
R_θJC	0.75°C/W - allows direct heatsink mounting with predictable junction temperature rise under 200W dissipation

Pinout & Package

IRFS31N20DPBF is housed in a TO-220AB package with isolated tab (drain-connected), standardized for mechanical mounting and thermal interface to heatsinks. Lead assignments follow JEDEC outline: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain configuration).

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control electrode	Receives 10V logic-level drive; threshold 3.0–5.5V enables compatibility with standard PWM controllers
2 (Drain)	Main high-side current path	Connected to primary winding or bus rail; electrically tied to metal tab for low-inductance heat sinking
3 (Source)	Reference node for gate drive	Serves as return path for load current and gate drive loop; critical for minimizing dv/dt-induced shoot-through
4 (Drain)	Secondary drain connection	Provides redundant current path and lower package inductance; used for Kelvin drain sensing in precision designs

Key Features

Feature	Design Value
Lead-free construction	RoHS-compliant plating and soldering profile compatible with 300°C reflow (10s)
Low Q_gd/Q_g ratio	33–65nC / 70–107nC - reduces Miller-induced switching delay and improves controllability at high dV/dt
Fully characterized C_oss	170pF effective value across 0–160V - enables precise soft-switching timing without iterative prototyping
Avalanche-rated	420mJ single-pulse energy - eliminates need for external clamping in inductive load transients
Optimized body diode	200–300ns t_rr, 1.3V V_SD - supports bidirectional current flow in active-clamp and synchronous rectifier modes

Applications

Telecom DC-DC Converters

Active-Clamp Forward Converters

Use Scenario: 48V input to 12V/30A isolated power supply in base station RF modules.

IC Role / Device Role / Timing Role: Primary-side switch operating at 300–500kHz with ZVS enabled by C_oss,eff and dual-drain layout.

Use Value: 0.082Ω R_DS(on) and 70nC Q_g reduce conduction + switching losses to <8W, enabling natural convection cooling.

Use Scenario: High-efficiency 200W server PSU using active-clamp forward topology with 200V bus.

IC Role / Device Role / Timing Role: Main switch clamped by auxiliary FET; body diode conducts during reset phase.

Use Value: 420mJ E_AS and 200–300ns t_rr ensure reliable clamp energy absorption and minimal recovery overshoot.

Industrial Motor Drives

UPS Inverter Stages

Use Scenario: 3-phase IGBT gate driver auxiliary supply with 200V DC link input.

IC Role / Device Role / Timing Role: High-side switch in flyback or forward converter powering isolated gate drivers.

Use Value: Dual-drain (Pins 2 & 4) lowers package inductance, reducing voltage spikes during 124A pulsed drain current.

Use Scenario: Online UPS inverter stage requiring robust 200V switching with fault tolerance.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge output stage handling battery backup loads.

Use Value: R_θJC = 0.75°C/W and 21A continuous current at 100°C case enable 98% efficiency at full load without forced air.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP31N20	R_DS(on) = 0.085Ω, Q_g = 75nC, no dual-drain pinout	Lacks Pin 4; higher gate charge increases driver loss in >300kHz designs	Preferred where cost sensitivity outweighs ZVS optimization and thermal margin
IXTH30N20L	R_DS(on) = 0.075Ω, Q_g = 82nC, TO-247 package	Higher thermal mass but larger footprint; better for >100W continuous conduction	Chosen when R_θJA < 40°C/W is required and board space permits TO-247

Compared with STP31N20 and IXTH30N20L, IRFS31N20DPBF offers superior ZVS enablers (lower Q_gd, dual-drain, 170pF C_oss,eff) in a compact TO-220AB form factor-ideal for space-constrained telecom and industrial SMPS where switching frequency and thermal density are prioritized.

Availability

IRFS31N20DPBF is available at Aetrix Electronics and suitable for telecom DC-DC converters, active-clamp forward power supplies, and industrial motor drive auxiliary supplies requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFS31N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-frequency switching in telecom, server, and industrial power conversion systems where reliability under repetitive avalanche stress is mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFS31N20DPBF supports 21A continuous drain current at T_C = 100°C with V_GS = 10V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220AB package and must be validated against actual PCB copper area and heatsink interface resistance in final layout.

Does the device require a negative gate turn-off voltage?

No, IRFS31N20DPBF operates with 0V to +10V gate drive and does not require negative turn-off bias. Its gate threshold voltage range (3.0–5.5V) and ±30V V_GS rating allow safe use with standard 12V logic-level drivers; negative voltage is unnecessary and not recommended per datasheet guidelines.

Can it replace IRFB31N20DPbF in existing designs?

Yes-IRFS31N20DPBF shares identical electrical specs, thermal performance, and pinout with IRFB31N20DPbF (TO-220AB variant), differing only in packaging detail (no "B" suffix). Both are lead-free, share same die, and are functionally interchangeable without layout or thermal redesign.

Is the body diode suitable for synchronous rectification?

The integrated body diode has 200–300ns reverse recovery time and 1.3V forward drop at 18A, making it usable in low-duty-cycle synchronous rectification but not optimal for high-frequency, high-current secondary-side applications. External Schottky diodes or dedicated SR controllers are preferred for >100kHz, >20A secondary-side use.

IRFS31N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 31A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 82mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 107 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta), 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: D2PAK

IRFS31N20DPBF FAQ

1.How can I place an order for IRFS31N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFS31N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFS31N20DPBF reliable?

The price and inventory of IRFS31N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFS31N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFS31N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFS31N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFS31N20DPBF?

IRFS31N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFS31N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFS31N20DPBF?

For technical support, including IRFS31N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFS31N20DPBF requirements.

6.How does Aetrix verify that IRFS31N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFS31N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFS31N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFS31N20DPBF?

All IRFS31N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFS31N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFS31N20DPBF part is unused and in its original packaging.

Return procedure for IRFS31N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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