FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPB80N06S2L09ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
7,459 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 4.5V, 10V | 8.2mOhm @ 52A, 10V | 2V @ 125µA | 105 nC @ 10 V | ±20V | 2620 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
IPD65R1K4CFDATMA1MOSFET N-CH 650V 2.8A TO252-3 Infineon Technologies |
5,879 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 2.8A (Tc) | 10V | 1.4Ohm @ 1A, 10V | 4.5V @ 100µA | 10 nC @ 10 V | ±20V | 262 pF @ 100 V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPD65R420CFDATMA1MOSFET N-CH 650V 8.7A TO252-3 Infineon Technologies |
5,019 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5 nC @ 10 V | ±20V | 870 pF @ 100 V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPD65R600E6ATMA1MOSFET N-CH 650V 7.3A TO252-3 Infineon Technologies |
5,457 | 0.00 |
|
Datasheet |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 600mOhm @ 2.1A, 10V | 3.5V @ 210µA | 23 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPD65R660CFDATMA1MOSFET N-CH 650V 6A TO252-3 Infineon Technologies |
2,229 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 6A (Tc) | 10V | 660mOhm @ 2.1A, 10V | 4.5V @ 200µA | 22 nC @ 10 V | ±20V | 615 pF @ 100 V | - | 62.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPD65R950CFDATMA1MOSFET N-CH 650V 3.9A TO252-3 Infineon Technologies |
8,775 | 0.00 |
|
Datasheet |
CoolMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.9A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 4.5V @ 200µA | 14.1 nC @ 10 V | ±20V | 380 pF @ 100 V | - | 36.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPI80N06S208AKSA2MOSFET N-CH 55V 80A TO262-3 Infineon Technologies |
3,188 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-262-3 Long Leads, I2PAK, TO-262AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO262-3-1 |
|
IPP80N04S2H4AKSA2MOSFET N-CH 40V 80A TO220-3 Infineon Technologies |
3,616 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4mOhm @ 80A, 10V | 4V @ 250µA | 148 nC @ 10 V | ±20V | 4400 pF @ 25 V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPP80N06S208AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
6,518 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
|
IPP80N06S209AKSA2MOSFET N-CH 55V 80A TO220-3 Infineon Technologies |
3,742 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | 4V @ 125µA | 80 nC @ 10 V | ±20V | 2360 pF @ 25 V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
