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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPP80N04S2H4AKSA2

Name: IPP80N04S2H4AKSA2
Brand: Infineon Technologies
SKU: IPP80N04S2H4AKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPP80N04S2H4AKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IPP80N04S2H4AKSA2.pdf

Description:: MOSFET N-CH 40V 80A TO220-3

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Product details

Overview

IPP80N04S2H4AKSA2 from Infineon Technologies is an N-channel enhancement-mode power MOSFET optimized for high-efficiency DC-DC conversion and motor control, featuring R_DS(on) = 3.5 mΩ (max) at V_GS = 10 V, continuous drain current I_D = 80 A, and breakdown voltage V_DS = 40 V in TO-220-3 package. It operates with gate threshold voltage V_GS(th) = 2.0–4.0 V and total gate charge Q_g = 95 nC.

For engineers reviewing the IPP80N04S2H4AKSA2 datasheet, IPP80N04S2H4AKSA2 pinout, IPP80N04S2H4AKSA2 application, or IPP80N04S2H4AKSA2 equivalent, key selection criteria include low conduction loss at high current, fast switching capability for synchronous rectification, thermal performance in TO-220 mounting, and gate drive compatibility with 5 V or 10 V logic-level controllers.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, delivering reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g). Its body diode exhibits reverse recovery time t_rr = 55 ns and peak reverse recovery current I_RRM = 45 A, enabling robust operation in hard-switched topologies.

The device supports pulsed drain current I_DM = 320 A and junction-to-case thermal resistance R_thJC = 0.75 K/W, confirming suitability for high-power density designs where heatsink interface and transient thermal management are critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage compatible with 12 V/24 V automotive and industrial bus systems.
R_DS(on) max	3.5 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 50 A, reducing heatsink requirements.
I_D cont	80 A @ T_C = 25 °C - Supports high-current motor phases or primary-side switches in 500–1000 W converters.
Q_g	95 nC - Determines gate driver power demand; compatible with standard 1–2 A peak drivers.
t_r/t_f	14 ns / 18 ns - Fast switching enables >200 kHz operation with minimized switching loss.
R_thJC	0.75 K/W - Allows ~75 °C temperature rise per watt at case, guiding thermal pad design and mounting pressure.

Pinout & Package

Supplied in TO-220-3 package with isolated tab (non-conductive mounting), featuring vertical power flow architecture for enhanced thermal transfer to heatsink. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Control input requiring ≤95 nC charge; sensitive to ESD; must be driven with low-impedance path to avoid oscillation.
Pin 2 (D)	Drain terminal (connected to metal tab)	Main high-side or low-side current path; electrically tied to heatsink-requires insulating washer if heatsink is grounded.
Pin 3 (S)	Source terminal	Reference node for gate drive; carries full load current; layout must minimize source inductance to preserve switching speed.

Key Features

Feature	Design Value
OptiMOS™ 2nd gen trench process	Delivers 20% lower R_DS(on) × Q_g vs. prior generation, improving efficiency in 100–300 kHz SMPS.
Enhanced body diode ruggedness	Supports unidirectional current reversal without failure in synchronous buck freewheeling paths.
Lead-free and RoHS-compliant	Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1), enabling standard reflow assembly.
Qualified per AEC-Q101	Validated for automotive under-hood applications including engine control modules and EPS drivers.

Applications

Automotive EPS Motor Driver

Industrial DC-DC Converter

Use Scenario: High-current H-bridge phase leg in electric power steering control unit.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional 60–80 A motor current with <100 ns dead-time tolerance.

Use Value: 3.5 mΩ R_DS(on) limits conduction loss to <1.5 W at 60 A, reducing thermal stress in confined ECU housing.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V isolated DC-DC module for telecom base stations.

IC Role / Device Role / Timing Role: High-frequency (250 kHz) low-side switch in active clamp forward topology.

Use Value: 95 nC Q_g and 18 ns t_f enable efficient zero-voltage switching (ZVS) transition with minimal driver loss.

Server VRM High-Side Switch

BLDC Motor Inverter Stage

Use Scenario: High-side switch in multiphase CPU voltage regulator delivering up to 200 A at 1.0 V.

IC Role / Device Role / Timing Role: Synchronous rectifier operating with 10 V gate drive and tight duty-cycle control.

Use Value: R_DS(on) stability over temperature ensures consistent current sharing across parallel phases.

Use Scenario: Phase-leg switch in 3 kW HVAC compressor inverter.

IC Role / Device Role / Timing Role: 40 V-rated N-channel device used in low-voltage, high-current BLDC commutation.

Use Value: 55 ns body diode t_rr prevents shoot-through during PWM dead-time and reduces snubber losses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 120 nC; V_DS = 55 V	Higher voltage rating but double R_DS(on); less efficient at 40 V bus	Prefer when 55 V system margin is required and thermal headroom allows higher conduction loss.
IRF1404ZPBF	R_DS(on) = 4.7 mΩ @ 10 V; Q_g = 131 nC; V_DS = 40 V; non-AEC-Q101	Higher gate charge increases driver loss; lacks automotive qualification	Acceptable for industrial non-automotive use where cost is prioritized over AEC-Q101 compliance.

Compared with STP80NF55-08 and IRF1404ZPBF, IPP80N04S2H4AKSA2 delivers superior conduction efficiency at 40 V systems, lower gate drive energy, and validated automotive reliability-making it optimal for space-constrained, thermally demanding EPS and server VRM designs.

Availability

IPP80N04S2H4AKSA2 is available at Aetrix Electronics and suitable for automotive electric power steering, industrial DC-DC converters, and server voltage regulator modules requiring stable component supply and long-term lifecycle support.

Supply support for IPP80N04S2H4AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the OptiMOS™ 40 V product line, engineered specifically for high-current, high-efficiency switching in automotive chassis systems and industrial power supplies.

FAQ

Is IPP80N04S2H4AKSA2 suitable for surface-mount assembly?

No. IPP80N04S2H4AKSA2 uses a through-hole TO-220-3 package with insulated tab and is designed for screw-mounted heatsink attachment. It is not compatible with reflow or wave soldering processes intended for SMD packages like SO-8 or PQFN.

What is the maximum allowable gate-source voltage?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended drive range is –5 V (turn-off) to +10 V (enhancement), with 0 V to +5 V usable for logic-level gate drivers in low-voltage systems.

Does this MOSFET require a gate resistor, and what value is typical?

Yes-a gate resistor is required to dampen ringing and control dV/dt. For IPP80N04S2H4AKSA2, a 10–22 Ω series resistor between driver output and gate is typical, balancing switching speed (t_r/t_f) against EMI and gate driver stress.

Can IPP80N04S2H4AKSA2 be paralleled with identical units?

Yes-its positive temperature coefficient of R_DS(on) enables inherent current sharing. Successful paralleling requires matched PCB trace lengths, symmetrical gate drive routing, and shared source inductance minimization to prevent dynamic imbalance during switching transitions.

IPP80N04S2H4AKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 4mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 148 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

IPP80N04S2H4AKSA2 FAQ

1.How can I place an order for IPP80N04S2H4AKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPP80N04S2H4AKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPP80N04S2H4AKSA2 reliable?

The price and inventory of IPP80N04S2H4AKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPP80N04S2H4AKSA2 is usually 5 days.

3.What payment methods are accepted for IPP80N04S2H4AKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPP80N04S2H4AKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPP80N04S2H4AKSA2?

IPP80N04S2H4AKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPP80N04S2H4AKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPP80N04S2H4AKSA2?

For technical support, including IPP80N04S2H4AKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPP80N04S2H4AKSA2 requirements.

6.How does Aetrix verify that IPP80N04S2H4AKSA2 is sourced from the original manufacturer or authorized distributors?

All IPP80N04S2H4AKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPP80N04S2H4AKSA2 meets industry standards.

7.What is the process for return or replacement of IPP80N04S2H4AKSA2?

All IPP80N04S2H4AKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPP80N04S2H4AKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPP80N04S2H4AKSA2 part is unused and in its original packaging.

Return procedure for IPP80N04S2H4AKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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