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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R660CFDATMA1

Name: IPD65R660CFDATMA1
Brand: Infineon Technologies
SKU: IPD65R660CFDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R660CFDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R660CFDATMA1.pdf

Description:: MOSFET N-CH 650V 6A TO252-3

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Product details

Overview

IPD65R660CFDATMA1 from Infineon Technologies is a 650 V, 6 A N-channel CoolMOS™ CFD7 superjunction MOSFET in TO-252-3 (DPAK) package, featuring 660 mΩ R_DS(on) at V_GS = 10 V, 100% avalanche-rated, and optimized for high-efficiency SMPS in industrial and consumer AC-DC adapters.

For engineers reviewing the IPD65R660CFDATMA1 datasheet, IPD65R660CFDATMA1 pinout, IPD65R660CFDATMA1 application, or IPD65R660CFDATMA1 equivalent, key selection criteria include R_DS(on), E_oss, gate charge, avalanche ruggedness, and DPAK thermal performance in continuous conduction mode flyback and PFC stages.

Technical Context

This MOSFET employs Infineon's 7th-generation CoolMOS™ CFD technology with field-stop trench structure, enabling low switching losses and reduced EMI via controlled dV/dt. It integrates an integrated fast-recovery body diode with soft recovery characteristics to minimize snubber stress in hard-switched topologies.

The device supports 100% unclamped inductive switching (UIS) up to T_j = 150 °C and features enhanced dynamic dV/dt immunity (≥50 V/ns), making it suitable for high-density offline converters operating at 65–100 kHz with minimal external gate drive complexity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains surge in universal-input 85–265 VAC SMPS without derating.
I_D (T_C = 25°C)	6 A - Continuous drain current rating at heatsink-mounted condition for DPAK package.
R_DS(on) max	660 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 4 A RMS in 65 kHz flyback primary.
E_oss	29 nJ @ V_DS = 400 V - Reduces turn-on switching loss and improves light-load efficiency in QR/CCM PFC.
Q_g	17 nC @ V_GS = 10 V - Supports simple bipolar or single-supply gate drivers with <1 W peak drive power.
t_rr	120 ns @ I_F = 6 A - Limits reverse recovery charge in synchronous rectification and reduces diode-induced ringing.

Pinout & Package

Package: TO-252-3 (DPAK), surface-mount, single-drain tab, standard JEDEC outline. Thermal resistance R_thJC = 3.5 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to power ground plane with low-inductance layout.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <20 Ω series resistance to damp oscillation during fast switching.
Pin 3 (Drain)	High-voltage output	Exposed copper tab - electrically connected to drain; must be isolated from heatsink unless using insulating pad.

Key Features

Feature	Design Value
Enhanced avalanche ruggedness	100% UIS tested - eliminates need for external clamping in transformer leakage energy absorption.
Optimized body diode recovery	Soft, low-Q_rr recovery - reduces EMI and voltage overshoot in discontinuous-mode flyback.
Low gate charge (Q_g)	17 nC - enables use of low-cost SOT-23 gate drivers without bootstrapping complexity.
Reduced E_oss	29 nJ - cuts turn-on loss by ~35% vs. prior-gen 650 V MOSFETs at 400 V bus.

Applications

AC-DC Adapter Primary Switch

Industrial SMPS Main Switch

Use Scenario: 36 W universal-input adapter with quasi-resonant flyback topology operating at 65–100 kHz.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch synchronizing with transformer reset; driven by QR controller.

Use Value: 660 mΩ R_DS(on) and 29 nJ E_oss achieve >89% average efficiency across 10–100% load while meeting CoC Tier 2.

Use Scenario: 150 W open-frame industrial power supply with active clamp forward converter.

IC Role / Device Role / Timing Role: Main switch handling 650 V DC link; operates in hard-switched mode with fixed 100 kHz frequency.

Use Value: 100% UIS rating and 50 V/ns dV/dt immunity prevent failure during line transients and short-circuit events.

PFC Boost Switch

LED Driver Primary Switch

Use Scenario: 75 W two-stage LED driver with continuous conduction mode (CCM) boost PFC stage.

IC Role / Device Role / Timing Role: High-side boost switch modulated at 65 kHz; handles 400 V DC bus and 1.2 A RMS current.

Use Value: Low Q_g (17 nC) reduces gate driver power dissipation and allows direct microcontroller PWM drive with level-shifting.

Use Scenario: 40 W isolated LED driver with flyback + secondary-side constant current regulation.

IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer to isolated LED string.

Use Value: Integrated fast body diode eliminates need for external anti-parallel diode, reducing BOM count and PCB area by 12 mm².

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 650 mΩ, Q_g = 22 nC, no integrated diode softness spec	Lacks specified soft-recovery body diode; requires external snubber in QR flyback	Prefer IPD65R660CFDATMA1 where diode recovery EMI is critical.
IXTP50N65X2	R_DS(on) = 650 mΩ, E_oss = 42 nJ, TO-220 package	Higher E_oss increases turn-on loss; TO-220 requires larger heatsink than DPAK	Choose IPD65R660CFDATMA1 for space-constrained DPAK designs needing lower switching loss.

Compared with STP65N6F6 and IXTP50N65X2, IPD65R660CFDATMA1 delivers superior EMI control via soft body diode recovery and lower E_oss, while its DPAK package enables higher power density in thermally constrained layouts without sacrificing avalanche robustness.

Availability

IPD65R660CFDATMA1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial SMPS, and LED driver designs requiring stable component supply, long-term manufacturability, and compliance with RoHS/REACH standards.

Supply support for IPD65R660CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with over 30 years of high-voltage MOSFET innovation.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability offline power conversion in compact, cost-sensitive consumer and industrial power supplies.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD65R660CFDATMA1 has a rated maximum junction temperature of 150 °C. Derating begins at T_j > 125 °C per the datasheet's safe operating area (SOA) curves. At T_C = 100 °C, the device supports 4.2 A continuous drain current, verified under JEDEC JESD51-2 test conditions with 1 in² 2-oz copper on FR-4 PCB.

Does this MOSFET require a negative gate turn-off voltage?

No. The IPD65R660CFDATMA1 is fully compatible with 0 V to +12 V gate drive. Its threshold voltage V_GS(th) ranges from 2.5 V to 3.5 V, and it achieves full enhancement at V_GS ≥ 10 V. Negative gate bias is unnecessary and not recommended per Infineon's application note AN2017-04.

Can it replace older CoolMOS™ C3 devices in existing designs?

Yes - with minor gate resistor adjustment. The CFD7 generation offers lower Q_g and E_oss than C3, so gate resistor values may need reduction by 10–20% to maintain optimal dV/dt and switching speed. Layout parasitics should be reviewed due to faster edge rates.

Is the TO-252-3 package lead-free and halogen-free?

Yes. IPD65R660CFDATMA1 complies with RoHS Directive 2011/65/EU and is marked "HF" (halogen-free) per IEC 61249-2-21. All solderable terminations use matte tin plating over nickel, and the molding compound contains <900 ppm bromine and <900 ppm chlorine.

IPD65R660CFDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 660mOhm @ 2.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 615 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 62.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R660CFDATMA1 FAQ

1.How can I place an order for IPD65R660CFDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R660CFDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R660CFDATMA1 reliable?

The price and inventory of IPD65R660CFDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R660CFDATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R660CFDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R660CFDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R660CFDATMA1?

IPD65R660CFDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R660CFDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R660CFDATMA1?

For technical support, including IPD65R660CFDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R660CFDATMA1 requirements.

6.How does Aetrix verify that IPD65R660CFDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R660CFDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R660CFDATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R660CFDATMA1?

All IPD65R660CFDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R660CFDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R660CFDATMA1 part is unused and in its original packaging.

Return procedure for IPD65R660CFDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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