Infineon Technologies IPP80N06S209AKSA2

Overview

IPP80N06S209AKSA2 from Infineon Technologies is an N-channel enhancement-mode automotive-qualified power MOSFET in PG-TO220-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 7.6–9.1 mΩ R_DS(on) at V_GS = 10 V. It is 100% avalanche tested and qualified to AEC-Q101 for under-hood motor control and DC-DC converter primary-side switching.

For engineers reviewing the IPP80N06S209AKSA2 datasheet, IPP80N06S209AKSA2 pinout, IPP80N06S209AKSA2 application, or IPP80N06S209AKSA2 equivalent, key selection criteria include R_DS(on) at 100 °C junction, single-pulse avalanche energy (370 mJ), thermal resistance (R_thJC = 0.8 K/W), and gate charge profile (Q_g = 60–80 nC) for high-frequency synchronous rectification and PWM motor drive design.

Technical Context

This OptiMOS® device uses trench-gate superjunction technology optimized for low conduction and switching losses in 12 V/24 V automotive systems. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while its 150 pF Crss and 2360 pF C_iss support stable operation up to 500 kHz switching frequencies with minimal Miller-induced shoot-through risk.

The integrated body diode features 80 A continuous forward current capability, 0.9–1.3 V V_SD at 80 A, and 50–63 ns t_rr, enabling efficient freewheeling in half-bridge and H-bridge topologies without external Schottky supplementation in moderate-duty-cycle applications.

Key Specifications

Pinout & Package

Package: PG-TO220-3-1 - Through-hole plastic package with isolated tab, standard footprint compatible with JEDEC TO-220AB mechanical outline, 175 °C maximum operating temperature, MSL1 rated for 260 °C peak reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB80N06S2-09 and IPP80N06S4L-08, IPP80N06S209AKSA2 offers proven automotive reliability in through-hole assembly, balanced gate charge for robust gate drive design, and validated thermal performance in legacy ECU platforms-making it optimal for cost-sensitive, volume-production replacements where layout change is constrained.

Availability

IPP80N06S209AKSA2 is available at Aetrix Electronics and suitable for automotive engine control units, 12 V/24 V DC-DC converters, and electric power steering motor drivers requiring stable component supply across extended product lifecycles.

Supply support for IPP80N06S209AKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® power transistor product line, engineered specifically for high-current, high-reliability switching in automotive 12 V/24 V systems where low R_DS(on), avalanche ruggedness, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is +175 °C, and the device is fully specified for continuous operation across this full range. Derating curves in the datasheet confirm 80 A I_D capability at T_C = 100 °C, supported by R_thJC = 0.8 K/W and thermal design margins verified per ANPS071E.

Is this MOSFET suitable for synchronous rectification in a 500 kHz buck converter?

Yes-its 29 ns rise time, 28 ns fall time, and 150 pF Crss enable clean, controllable switching at 500 kHz. Gate charge of 60–80 nC requires a driver capable of ±2 A peak current; layout must minimize source inductance to prevent oscillation during hard switching.

Does the device include an integrated body diode, and what are its key parameters?

Yes-it features a monolithic body diode rated for 80 A continuous forward current. Key parameters include V_SD = 0.9–1.3 V at 80 A and 25 °C, reverse recovery time t_rr = 50–63 ns, and Q_rr = 76–95 nC, all measured at I_F = 80 A, dI/dt = 100 A/µs, and V_R = 30 V.

Can IPP80N06S209AKSA2 replace IPP80N06S2-09 in existing TO-220 footprints?

Yes-both share identical PG-TO220-3-1 package, pinout, and mechanical dimensions. The "KSA2" suffix denotes tape-and-reel packaging and AEC-Q101 requalification per latest revision; electrical specifications and thermal behavior are functionally identical to the original IPP80N06S2-09.