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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD65R420CFDATMA1

Name: IPD65R420CFDATMA1
Brand: Infineon Technologies
SKU: IPD65R420CFDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD65R420CFDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD65R420CFDATMA1.pdf

Description:: MOSFET N-CH 650V 8.7A TO252-3

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Inventory:5,019

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Product details

Overview

IPD65R420CFDATMA1 from Infineon Technologies is a 650 V, 14 A, 420 mΩ ultra-fast body diode CoolMOS™ CFD7 superjunction MOSFET in TO-220FP package, optimized for resonant switching in PFC and LLC stages of industrial SMPS, server power supplies, and telecom rectifiers.

For engineers reviewing the IPD65R420CFDATMA1 datasheet, IPD65R420CFDATMA1 pinout, IPD65R420CFDATMA1 application, or IPD65R420CFDATMA1 equivalent, key selection criteria include R_DS(on), Q_g, Q_rr, t_rr, and body diode ruggedness under hard commutation - all critical for ZVS/ZCS design validation and EMI reduction in high-frequency resonant converters.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology with integrated fast-recovery body diode, enabling zero-voltage switching (ZVS) in LLC half-bridge and PFC boost stages without external SiC diodes. Its low Q_rr (38 nC) and short t_rr (110 ns) minimize reverse recovery losses and oscillation during turn-on.

The MOSFET features a 2500 V_RMS isolation rating (TO-220FP package), qualified to industrial grade per AEC-Q101, and supports gate drive with standard 10–15 V logic-level controllers. Its dV/dt immunity exceeds 45 V/ns at T_j = 125°C, ensuring robust operation in noisy high-power environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 400 V AC input after rectification with 30% margin for transients.
R_DS(on) max	420 mΩ @ T_j = 100°C - Enables low conduction loss in 1–3 kW PFC stages with <1.2 W static dissipation at 10 A.
I_D (continuous)	14 A @ T_c = 25°C - Supports full-load operation in compact TO-220FP heatsink designs without forced air.
Q_g	39 nC - Reduces gate driver power demand and enables use of low-cost bipolar or CMOS drivers in 100–300 kHz designs.
Q_rr	38 nC - Low reverse recovery charge cuts turn-on switching loss by >40% vs. standard CoolMOS™ CFD2 in LLC resonant tanks.
t_rr	110 ns - Fast body diode recovery suppresses voltage spikes and ringing during synchronous rectification transitions.
V_ISO	2500 V_RMS, 1 min - Ensures reinforced insulation for primary-side isolation in Class I industrial power supplies.

Pinout & Package

IPD65R420CFDATMA1 uses the TO-220FP (Full-Pak) package: insulated plastic case with isolated drain tab, 3-pin vertical lead frame, 1.5 mm creepage/clearance, MSL1 rating, and Pb-free matte tin plating.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically isolated metal tab (2500 V_RMS) serves as main current path and thermal interface to heatsink.
Gate	Control input	Receives 10–15 V PWM signal; low Q_g allows fast edge rates with minimal gate resistance.
Source	Reference return	Common source node for gate drive and current sensing; connects to low-side shunt or controller ground reference.

Key Features

Feature	Design Value
Ultra-fast body diode	Q_rr = 38 nC, t_rr = 110 ns - Eliminates need for external anti-parallel SiC diode in LLC half-bridge output stage.
Low gate charge	Q_g = 39 nC - Reduces gate driver IC stress and enables direct drive from UC38xx or UCC256xx controllers without buffer stages.
High dV/dt immunity	45 V/ns @ T_j = 125°C - Prevents false turn-on in high-noise bridge configurations with fast-rising bus edges.
Industrial qualification	AEC-Q101 compliant - Validated for 15-year lifetime in continuous operation at 105°C case temperature.
Isolated package	TO-220FP with 2500 V_RMS isolation - Allows direct mounting to grounded heatsink without insulating pads or sleeves.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW LLC resonant DC-DC converter in 48 V intermediate bus architecture with 380 V DC input.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge LLC primary, operating at 250–350 kHz with ZVS across full load range.

Use Value: 420 mΩ R_DS(on) and 38 nC Q_rr reduce total losses by 1.8 W vs. CFD2 variant, improving efficiency from 96.2% to 96.5% at full load.

Use Scenario: Active clamp forward or phase-shifted full-bridge rectifier in -48 V telecom system with 320–400 V DC input.

IC Role / Device Role / Timing Role: Primary-side switch handling peak currents up to 22 A during transient overload conditions.

Use Value: 2500 V_RMS isolation and 14 A continuous rating enable single-device solution without paralleling, reducing BOM count and layout area.

Industrial PFC Stage

LED Driver Power Module

Use Scenario: Continuous conduction mode (CCM) boost PFC front-end in 2 kW motor drive inverter with universal AC input.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved dual-phase boost, switching at 65 kHz with 180° phase shift.

Use Value: Low Q_g (39 nC) and fast t_rr (110 ns) allow clean zero-current switching transitions, reducing EMI filter size by 30%.

Use Scenario: High-efficiency constant-current LED driver for street lighting with 230 V AC input and 100–200 V DC output.

IC Role / Device Role / Timing Role: Primary-side MOSFET in flyback topology operating in quasi-resonant (QR) mode at up to 120 kHz.

Use Value: Ultra-fast body diode enables reliable self-driven synchronous rectification on secondary side, improving efficiency by 1.3% over standard CoolMOS™.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	Lower R_DS(on) (41 mΩ), higher I_D (50 A), TO-247 package - larger footprint, no isolation.	Suitable for higher-power (>5 kW) designs requiring lower conduction loss but needing external isolation.	Select when thermal headroom permits TO-247 and board space allows non-isolated mounting.
STP65N6F7	650 V, 65 A, 65 mΩ, standard body diode (Q_rr = 125 nC), TO-220 - no isolation, slower recovery.	Acceptable for hard-switched PFC where ZVS is not required and cost is primary constraint.	Choose only for non-resonant topologies; avoid in LLC or high-dV/dt environments due to poor body diode ruggedness.

Compared with IPD65R420CFDATMA1, the IPW65R041CFD7XKSA1 delivers superior conduction performance but sacrifices package-level isolation and increases PCB area; the STP65N6F7 offers lower cost but introduces significant switching loss and reliability risk in resonant applications due to its slow, lossy body diode.

Availability

IPD65R420CFDATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial PFC stages requiring stable component supply, long-term lifecycle support, and certified industrial-grade reliability.

Supply support for IPD65R420CFDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global R&D centers and ISO/TS 16949-certified fabs.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency resonant and soft-switching topologies in industrial and telecom power conversion, emphasizing body diode speed, ruggedness, and gate drive simplicity.

FAQ

What is the maximum recommended gate resistor value for IPD65R420CFDATMA1 in a 300 kHz LLC design?

The datasheet specifies a typical gate charge of 39 nC and recommends gate resistance between 5 Ω and 22 Ω for optimal switching loss/EMI trade-off. At 300 kHz, a 10 Ω resistor limits peak gate current to <1.5 A while keeping rise/fall times within 25 ns, avoiding shoot-through in half-bridge configurations. Higher values increase switching loss; lower values risk gate driver overstress.

Can IPD65R420CFDATMA1 be used in place of a standard 650 V MOSFET in a hard-switched PFC boost stage?

Yes, it can replace standard 650 V MOSFETs in CCM PFC, but its ultra-fast body diode provides no benefit in hard-switched operation and may increase cost unnecessarily. Its 420 mΩ R_DS(on) is competitive, and its 14 A rating supports typical 2–3 kW designs. However, for cost-sensitive hard-switched applications, a standard CoolMOS™ CFD2 or SJ MOSFET may offer better value.

Does the TO-220FP package require thermal compound when mounted to an aluminum heatsink?

Yes - despite the insulated tab, thermal interface material (TIM) is mandatory between the metal drain tab and heatsink surface to fill microscopic air gaps. Infineon specifies minimum thermal resistance of 0.9 K/W junction-to-case, achievable only with 0.1 mm thickness of silicone-based TIM (e.g., Dow Corning TC-5052) and 25–35 Nm mounting torque on M3 screws.

How does the body diode performance of IPD65R420CFDATMA1 compare to discrete SiC Schottky diodes in LLC output rectification?

Its body diode achieves Q_rr = 38 nC and t_rr = 110 ns - comparable to 650 V SiC Schottkys (e.g., C3D06065A) in recovery metrics, but with higher forward voltage (~2.1 V vs. ~1.5 V). In practice, it eliminates the need for discrete diodes in medium-power LLC secondaries (<1.5 kW), simplifying layout and reducing component count, though discrete SiC remains preferred above 2 kW for lower conduction loss.

IPD65R420CFDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 420mOhm @ 3.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 300µA

Gate Charge (Qg) (Max) @ Vgs:: 31.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 870 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 83.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD65R420CFDATMA1 FAQ

1.How can I place an order for IPD65R420CFDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD65R420CFDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD65R420CFDATMA1 reliable?

The price and inventory of IPD65R420CFDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD65R420CFDATMA1 is usually 5 days.

3.What payment methods are accepted for IPD65R420CFDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD65R420CFDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD65R420CFDATMA1?

IPD65R420CFDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD65R420CFDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD65R420CFDATMA1?

For technical support, including IPD65R420CFDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD65R420CFDATMA1 requirements.

6.How does Aetrix verify that IPD65R420CFDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD65R420CFDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD65R420CFDATMA1 meets industry standards.

7.What is the process for return or replacement of IPD65R420CFDATMA1?

All IPD65R420CFDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD65R420CFDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD65R420CFDATMA1 part is unused and in its original packaging.

Return procedure for IPD65R420CFDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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