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Infineon Technologies IPB80N06S2L09ATMA2

Name: IPB80N06S2L09ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S2L09ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB80N06S2L09ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S2L09ATMA2.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

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Product details

Overview

IPB80N06S2L09ATMA2 from Infineon is an N-channel logic-level enhancement-mode MOSFET optimized for automotive and industrial high-current switching. It delivers 80 A continuous drain current at T_C = 25 °C, 55 V V_DS, and ultra-low R_DS(on) of 6.6–8.2 mΩ (at V_GS = 10 V, SMD version), with AEC-Q101 qualification and 175 °C operation-used in DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N06S2L09ATMA2 datasheet, IPB80N06S2L09ATMA2 pinout, IPB80N06S2L09ATMA2 application, or IPB80N06S2L09ATMA2 equivalent, key selection criteria include R_DS(on) at 4.5 V/10 V, avalanche energy (370 mJ), thermal resistance (R_thJC = 0.8 K/W), diode forward voltage (0.9–1.3 V), and gate charge (Q_g = 82–105 nC).

Technical Context

This OptiMOS® device uses trench-gate superjunction technology to achieve low conduction loss while maintaining fast switching performance. Its logic-level gate threshold (V_GS(th) = 1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, and its 100% avalanche-tested ruggedness supports unclamped inductive switching in motor drives.

The integrated body diode exhibits low reverse recovery charge (Q_rr = 70–90 nC) and t_rr = 57–70 ns, enabling efficient synchronous rectification. Thermal design is supported by a low junction-to-case resistance (0.8 K/W), allowing high-power operation on TO263-3 PCB footprints with 6 cm² copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) max @ V_GS=10 V	8.2 mΩ (SMD) - enables <1 W conduction loss at 80 A, critical for thermal management
I_D continuous	80 A @ T_C=25 °C - supports high-current loads like BLDC motor phases and solenoid drivers
E_AS	370 mJ - ensures reliable operation under unclamped inductive switching in motor control
Q_g	82–105 nC - determines gate driver power requirement and switching speed trade-off
V_GS(th)	1.2–2.0 V - allows direct interface with 3.3 V/5 V logic without external level shifters
T_j max	+175 °C - qualified for under-hood automotive environments and high-temp industrial enclosures

Pinout & Package

IPB80N06S2L09ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal relief. The package features gull-wing leads and MSL1 rating for lead-free reflow up to 260 °C.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connected to ground or current-sense shunt for feedback
Pin 2 (Gate)	Control input	Logic-level compatible; requires <105 nC charge for full turn-on at 10 V
Pin 3 (Drain)	Power output / high-side switch node	Exposed metal tab - must be soldered to large copper pour for thermal dissipation (R_thJC = 0.8 K/W)

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and chassis systems per stress test requirements
Ultra-low R_DS(on) at 4.5 V	8.1–11 mΩ - enables efficient operation with 5 V gate drivers in legacy control systems
100% avalanche tested	Single-pulse E_AS = 370 mJ - guarantees robustness against inductive kickback in motor phase legs
Green package	Lead-free, halogen-free, RoHS-compliant construction for global regulatory compliance
Integrated body diode	V_SD = 0.9–1.3 V @ 80 A - reduces need for external freewheeling diodes in H-bridge topologies

Applications

Automotive Motor Control

Industrial DC-DC Converters

Use Scenario: Driving three-phase BLDC motors in electric power steering (EPS) and HVAC blowers.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles 80 A peak phase current with minimal conduction loss.

Use Value: Enables compact, thermally efficient inverter design meeting ASIL-B functional safety constraints via AEC-Q101 reliability.

Use Scenario: Primary-side synchronous rectifier in 48 V–12 V buck converters for server PSUs and telecom equipment.

IC Role / Device Role / Timing Role: High-efficiency power switch operating at 100–500 kHz with low Q_g-driven switching loss.

Use Value: Reduces conduction loss by >30% vs. older 10 mΩ MOSFETs, improving full-load efficiency to >95%.

Onboard Charger (OBC) Input Stage

High-Current Solenoid Drivers

Use Scenario: AC-DC front-end switching in bidirectional EV onboard chargers handling 6.6 kW input.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged switch in PFC boost stage; withstands line transients and inductive spikes.

Use Value: Eliminates need for external snubbers due to 370 mJ single-pulse avalanche rating, reducing BOM count.

Use Scenario: High-duty-cycle actuation of hydraulic valves and fuel injectors in off-highway machinery.

IC Role / Device Role / Timing Role: Logic-level controlled load switch with integrated diode for flyback energy recirculation.

Use Value: Supports 100% duty cycle operation at 80 A with 175 °C junction rating, eliminating thermal derating in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2L-09	TO-220-3 through-hole package; identical die, higher R_thJA (62 K/W vs. 40 K/W on PCB)	Better suited for prototyping, lower-volume industrial controls where heatsinking is discrete	Select when mechanical mounting constraints favor through-hole or manual assembly is required
IPB80N06S2H09ATMA2	Same TO263-3 package but with improved R_DS(on) (6.0 mΩ typ. @ 10 V) and lower Q_g (75 nC)	Preferred for high-frequency (>300 kHz) SMPS where switching loss dominates	Choose for next-gen designs targeting >96% efficiency or tighter thermal budgets

Compared with IPP80N06S2L-09, IPB80N06S2L09ATMA2 offers superior thermal performance on PCBs; versus IPB80N06S2H09ATMA2, it trades slightly higher R_DS(on) and Q_g for proven field reliability and broader supply chain availability.

Availability

IPB80N06S2L09ATMA2 is available at Aetrix Electronics and suitable for automotive motor control, industrial DC-DC converters, and onboard charger input stages requiring stable component supply across multi-year production cycles.

Supply support for IPB80N06S2L09ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor leader specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

This part belongs to the OptiMOS® 2nd generation power transistor product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power conversion systems.

FAQ

Is IPB80N06S2L09ATMA2 pin-compatible with IPP80N06S2L-09?

No - IPB80N06S2L09ATMA2 uses PG-TO263-3-2 (D²PAK) surface-mount packaging, while IPP80N06S2L-09 uses PG-TO220-3-1 through-hole packaging. Though electrically identical, their mechanical footprints, thermal paths, and assembly processes differ significantly. PCB layout and reflow profile must be redesigned for migration.

What is the maximum safe operating temperature for continuous use?

The device is rated for continuous operation up to T_j = +175 °C, verified per AEC-Q101 stress testing. At this junction temperature, R_DS(on) increases to ~14 mΩ (typ.), and derating of I_D to ~45 A is required. Thermal design must ensure R_thJC ≤ 0.8 K/W and adequate PCB copper area to sustain this limit.

Does it support 3.3 V logic-level gate drive?

Yes - with V_GS(th) ranging from 1.2 V to 2.0 V and guaranteed R_DS(on) ≤ 11.3 mΩ at V_GS = 4.5 V, the device fully turns on using standard 3.3 V microcontroller GPIOs when paired with appropriate gate resistor and layout. However, full 80 A conduction requires V_GS ≥ 10 V for minimum R_DS(on).

How is avalanche ruggedness validated?

Each unit undergoes 100% single-pulse avalanche testing at I_D = 80 A, yielding E_AS = 370 mJ - measured per JEDEC JESD24-11. This confirms capability to absorb inductive energy without failure during fault conditions such as motor stall or short-circuit events in automotive H-bridges.

IPB80N06S2L09ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 8.2mOhm @ 52A, 10V

Vgs(th) (Max) @ Id:: 2V @ 125µA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2620 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 190W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S2L09ATMA2 FAQ

1.How can I place an order for IPB80N06S2L09ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S2L09ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S2L09ATMA2 reliable?

The price and inventory of IPB80N06S2L09ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S2L09ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S2L09ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S2L09ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S2L09ATMA2?

IPB80N06S2L09ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S2L09ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S2L09ATMA2?

For technical support, including IPB80N06S2L09ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S2L09ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S2L09ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S2L09ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S2L09ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S2L09ATMA2?

All IPB80N06S2L09ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S2L09ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S2L09ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S2L09ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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