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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IPD50R500CEATMA1MOSFET N-CH 500V 7.6A TO252-3 Infineon Technologies |
5,872 | 0.00 |
|
Datasheet |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 7.6A (Tc) | 13V | 500mOhm @ 2.3A, 13V | 3.5V @ 200µA | 18.7 nC @ 10 V | ±20V | 433 pF @ 100 V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
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IPD50R650CEATMA1MOSFET N-CH 500V 6.1A TO252-3 Infineon Technologies |
5,552 | 0.00 |
|
Datasheet |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15 nC @ 10 V | ±20V | 342 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD50R800CEATMA1MOSFET N CH 500V 5A TO252 Infineon Technologies |
8,146 | 0.00 |
|
Datasheet |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 500 V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD50R950CEATMA1MOSFET N-CH 500V 4.3A TO252-3 Infineon Technologies |
6,073 | 0.00 |
|
Datasheet |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.3A (Tc) | 13V | 950mOhm @ 1.2A, 13V | 3.5V @ 100µA | 10.5 nC @ 10 V | ±20V | 231 pF @ 100 V | - | 53W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD60R750E6ATMA1MOSFET N-CH 600V 5.7A TO252-3 Infineon Technologies |
3,929 | 0.00 |
|
Datasheet |
CoolMOS™ E6 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 5.7A (Tc) | 10V | 750mOhm @ 2A, 10V | 3.5V @ 170µA | 17.2 nC @ 10 V | ±20V | 373 pF @ 100 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
IPU60R600C6AKMA1MOSFET N-CH 600V 7.3A TO251-3 Infineon Technologies |
7,425 | 0.00 |
|
Datasheet |
CoolMOS™ C6 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 7.3A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 3.5V @ 200µA | 20.5 nC @ 10 V | ±20V | 440 pF @ 100 V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
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|
IPU60R950C6AKMA1MOSFET N-CH 600V 4.4A TO251-3 Infineon Technologies |
7,339 | 0.00 |
|
Datasheet |
CoolMOS™ C6 | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.4A (Tc) | 10V | 950mOhm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3 |
|
IPB77N06S212ATMA2MOSFET N-CH 55V 77A TO263-3 Infineon Technologies |
4,419 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 77A (Tc) | 10V | 11.7mOhm @ 38A, 10V | 4V @ 93µA | 60 nC @ 10 V | ±20V | 1770 pF @ 25 V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
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IPB80N06S207ATMA4MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
6,079 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 6.3mOhm @ 68A, 10V | 4V @ 180µA | 110 nC @ 10 V | ±20V | 3400 pF @ 25 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
|
|
IPB80N06S208ATMA2MOSFET N-CH 55V 80A TO263-3 Infineon Technologies |
7,139 | 0.00 |
|
Datasheet |
OptiMOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 80A (Tc) | 10V | 7.7mOhm @ 58A, 10V | 4V @ 150µA | 96 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO263-3-2 |
