Infineon Technologies IPD50R800CEATMA1

Overview

IPD50R800CEATMA1 from Infineon Technologies is a 500 V, 0.8 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency, cost-sensitive hard-switching and resonant PFC and PWM stages in lighting and adapter applications. It delivers 7.6 A continuous drain current at T_C = 25°C, 12.4 nC total gate charge, and 1.46 µJ output switching energy at 400 V.

For engineers reviewing the IPD50R800CEATMA1 datasheet, IPD50R800CEATMA1 pinout, IPD50R800CEATMA1 application, or IPD50R800CEATMA1 equivalent, key selection criteria include its low FOM (R_DS(on) × Q_g), high commutation ruggedness (500 A/µs di/dt), ease of gate drive (5.3 V plateau), and qualification for standard-grade industrial and consumer use.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly reduced conduction and switching losses versus planar MOSFETs. Its 500 V V_(BR)DSS, 0.8 Ω max R_DS(on) at 150°C, and 12.4 nC Q_g support high-frequency operation up to 100 kHz in PFC boost stages while maintaining thermal stability.

The integrated body diode exhibits 158 ns reverse recovery time and 0.84 µC Q_rr at 400 V, enabling robust performance in discontinuous conduction mode (DCM) and transition-mode (TM) topologies. Gate threshold voltage (2.5–3.5 V) and 5.3 V gate plateau ensure stable turn-on with standard 12 V gate drivers without requiring negative bias.

Key Specifications

Pinout & Package

IPD50R800CEATMA1 is housed in a surface-mount DPAK (PG-TO252) package with exposed drain pad for thermal enhancement. The package features gull-wing leads and is RoHS-compliant with halogen-free mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP5NK50ZFP and IPP60R099C7, IPD50R800CEATMA1 offers optimal balance of low R_DS(on), moderate Q_g, SMD packaging, and proven ruggedness for high-volume consumer power supplies-making it the preferred choice for 65–100 kHz PFC and adapter designs demanding cost-performance alignment.

Availability

IPD50R800CEATMA1 is available at Aetrix Electronics and suitable for LED lighting ballasts, USB-C PD adapters, and LCD TV power supplies requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for IPD50R800CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

This device belongs to the CoolMOS™ CE family-a cost-optimized superjunction MOSFET platform targeting high-efficiency, high-volume consumer and lighting power conversion where price sensitivity and reliability must coexist.

FAQ

Is IPD50R800CEATMA1 suitable for paralleling in high-current PFC designs?

Yes-Infineon explicitly recommends gate ferrite beads or separate totem-pole drivers for paralleling. Its matched threshold voltage (2.5–3.5 V) and low R_DS(on) tolerance (±10%) ensure balanced current sharing. Thermal resistance of 2.07 °C/W (junction-to-case) further supports uniform die temperature across parallel units.

What is the maximum recommended gate resistor value for 100 kHz operation?

For 100 kHz hard-switched PFC, a 5.3 Ω gate resistor is validated in the datasheet (Table 5). Increasing beyond 10 Ω extends turn-on time excessively, raising conduction loss; values below 3.3 Ω risk ringing and EMI. Use 4.7–5.6 Ω with 12 V gate drive for optimal trade-off between switching loss and EMI.

Does this MOSFET include an integrated ESD protection diode on the gate?

No-the device has no internal gate ESD protection diode. The absolute maximum gate-source voltage is ±30 V (static) and ±20 V (AC), per Table 2. External Zener clamping (e.g., 15 V TVS) is required in noisy environments to prevent gate oxide damage during handling or system-level transients.

Can IPD50R800CEATMA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-with minor layout review. It shares identical DPAK pinout and thermal footprint with IPD50R800C3 and IPD50R800C6, but offers lower Q_g (12.4 nC vs. 14.5 nC) and improved E_oss. Gate drive timing may require slight RG adjustment; no changes to PCB or heatsink are needed for drop-in replacement in most 65–100 kHz applications.