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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R950CEATMA1

Name: IPD50R950CEATMA1
Brand: Infineon Technologies
SKU: IPD50R950CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R950CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R950CEATMA1.pdf

Description:: MOSFET N-CH 500V 4.3A TO252-3

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Product details

Overview

IPD50R950CEATMA1 from Infineon Technologies is a 500 V, 0.95 Ω R_DS(on), DPAK-packaged CoolMOS™ CE superjunction N-channel power MOSFET optimized for high-efficiency, cost-sensitive hard-switching and resonant PFC and PWM stages in consumer lighting and adapter applications. It delivers 6.6 A continuous drain current at T_C = 25°C, 10.5 nC total gate charge, and 1.28 µJ output switching energy at 400 V.

For engineers reviewing the IPD50R950CEATMA1 datasheet, IPD50R950CEATMA1 pinout, IPD50R950CEATMA1 application, or IPD50R950CEATMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit (0.95 Ω × 10.5 nC), high commutation ruggedness (500 A/µs di/dt, 50 V/ns dv/dt), and validated performance in 400 V DC-link PFC circuits with minimal gate drive complexity.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V rating. Its gate threshold voltage (2.5–3.5 V) and plateau voltage (5.4 V) support standard 12 V gate drivers without level-shifting, while its low C_iss (231 pF) and C_oss (19 pF) reduce drive power and improve EMI behavior in high-frequency SMPS designs.

The MOSFET integrates a fast-recovery body diode (t_rr = 140 ns, Q_rr = 0.7 µC) suitable for discontinuous conduction mode (DCM) and transition-mode (TM) PFC, and exhibits robust avalanche capability (E_AS = 68 mJ) under single-pulse conditions-critical for surge immunity in unregulated AC-DC front-ends.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	550 V - Ensures reliable operation with 400 V DC-link plus 30% transient margin in PFC and offline SMPS.
R_DS(on) max @ 150°C	0.95 Ω - Enables low conduction loss in compact 6.6 A continuous current designs with minimal heatsinking.
Q_g typ	10.5 nC - Reduces gate driver power and allows use of low-cost, integrated half-bridge drivers (e.g., IRS2011).
E_oss @ 400 V	1.28 µJ - Low stored output capacitance energy minimizes turn-on switching loss in hard-switched topologies.
t_r/t_f	4.9 ns / 19.5 ns - Fast edge rates support >100 kHz operation while maintaining controllable EMI via external gate resistor tuning.
I_D,pulse	12.8 A - Supports peak-load handling in adapter and TV power supplies during startup or overload events.

Pinout & Package

IPD50R950CEATMA1 is housed in a surface-mount PG-TO252 (DPAK) package with standard thermal pad layout and JEDEC-compliant footprint. The package provides 2.35 °C/W junction-to-case thermal resistance and supports reflow soldering up to 260 °C (MSL 1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Accepts 0–13 V logic-level gate drive; low 3 Ω internal gate resistance simplifies RC snubber design.
Pin 2 (Drain)	High-voltage power terminal	Connected to DC-link or transformer primary; electrically isolated from tab; requires clearance for 500 V working voltage.
Pin 3 (Source)	Power return & reference node	Serves as gate drive return path and current sense point; bonded directly to thermal pad for low-inductance source routing.

Key Features

Feature	Design Value
Superjunction architecture	Reduces R_DS(on) × Q_g FOM by >40% vs. planar 500 V MOSFETs, enabling higher efficiency at same die size.
High commutation ruggedness	Rated for 500 A/µs di/dt and 50 V/ns dv/dt-enables reliable operation in critical-mode PFC without snubbers.
Low E_oss & C_oss	1.28 µJ E_oss and 19 pF C_oss minimize turn-on loss and improve light-load efficiency in resonant converters.
Halogen-free & Pb-free	Complies with RoHS and JEDEC J-STD-020 reflow standards; suitable for consumer-grade industrial production.
Body diode t_rr	140 ns reverse recovery time enables stable DCM operation in boost PFC without oscillation or shoot-through risk.

Applications

LED Driver Power Stage

PC Silverbox PFC

Use Scenario: Constant-current LED driver for indoor lighting with universal AC input (90–264 VAC) and 400 V DC-link.

IC Role / Device Role / Timing Role: Primary switch in continuous conduction mode (CCM) boost PFC stage operating at 65–100 kHz.

Use Value: Delivers >95% efficiency at full load due to low R_DS(on) and E_oss, reducing thermal stress on aluminum electrolytic bulk capacitors.

Use Scenario: Active PFC front-end in desktop PC power supplies meeting 80 PLUS Bronze requirements.

IC Role / Device Role / Timing Role: High-side switch in interleaved boost PFC with 100 kHz switching frequency and 400 V bus.

Use Value: Enables parallel operation with ferrite-beaded gate traces, supporting scalable 300–500 W designs without derating.

LCD TV Backlight Inverter

USB-C PD Adapter

Use Scenario: Resonant half-bridge LLC converter driving CCFL or LED backlight in 32–55″ LCD TVs.

IC Role / Device Role / Timing Role: Upper-leg switch in asymmetric half-bridge topology with ZVS turn-on at 200–500 kHz.

Use Value: Low Q_gd/Q_g ratio (5.9/10.5 nC) ensures precise zero-voltage switching timing control across line/load variations.

Use Scenario: Compact 65 W USB-C Power Delivery adapter with GaN-assisted hybrid topology.

IC Role / Device Role / Timing Role: Synchronous rectifier control MOSFET in secondary-side active clamp flyback stage.

Use Value: Fast 140 ns body diode recovery prevents cross-conduction loss during synchronous rectification transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 500 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP5NK50ZFP	R_DS(on) = 1.2 Ω (max), Q_g = 14.5 nC, TO-220FP package, no halogen-free certification.	Higher conduction loss limits use to <50 W adapters; unsuitable for high-density SMD layouts.	Select only when through-hole mounting and legacy qualification are required.
IPP60R099C6	R_DS(on) = 0.099 Ω (max), 600 V rating, 13.5 nC Q_g, TO-220 package, CoolMOS™ C6 generation.	Lower R_DS(on) improves efficiency but increases cost and gate drive demand; over-specified for 400 V DC-link.	Prefer for 600 V systems or where future-proofing against higher bus voltages is needed.

Compared with STP5NK50ZFP, IPD50R950CEATMA1 offers 21% lower R_DS(on) and 28% lower Q_g in a smaller DPAK package, improving power density and thermal management. Against IPP60R099C6, it trades 100 V headroom for 30% lower system cost and simpler gate drive in 400 V applications.

Availability

IPD50R950CEATMA1 is available at Aetrix Electronics and suitable for LED lighting drivers, PC silverbox power supplies, and LCD TV backlight inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IPD50R950CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ CE product line-designed specifically for cost-sensitive, high-efficiency AC-DC conversion in consumer lighting and adapter markets, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum recommended gate resistor value for reliable switching in a 100 kHz PFC stage?

A 10 Ω gate resistor is recommended for stable 100 kHz operation with minimal overshoot and EMI. This value balances switching speed (t_r/t_f ≈ 5/20 ns) and gate ringing suppression, especially when paired with the device's 3 Ω internal gate resistance and typical PCB trace inductance (≤5 nH). Higher values increase turn-on loss; lower values risk oscillation without proper layout.

Can IPD50R950CEATMA1 be used in parallel configurations without gate resistors?

No-parallel operation requires individual 10–22 Ω gate resistors per device or ferrite beads to suppress gate loop oscillation and ensure current sharing. The datasheet explicitly recommends this for paralleling, as mismatched propagation delays and stray inductance cause dynamic current imbalance and thermal runaway above 3 A per device.

Does the body diode support continuous bidirectional conduction in synchronous rectification?

No-the body diode is optimized for unidirectional recovery in boost PFC and flyback applications, not sustained bidirectional conduction. Its 140 ns t_rr and 8.5 A I_RRM support short-duration reverse recovery during dead-time, but continuous reverse current exceeds safe operating area limits and risks thermal failure.

What is the minimum PCB copper area required to maintain T_j ≤ 125°C at 6.6 A continuous current?

A minimum 6 cm² of 70 µm thick copper on the drain pad (per Infineon's test condition) is required to achieve T_j ≤ 125°C at 6.6 A and 25°C ambient. With less copper or no thermal vias, junction temperature rises rapidly-e.g., 3 cm² raises T_j by ~22°C at full load, necessitating derating to 4.8 A or forced airflow.

IPD50R950CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 4.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 1.2A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 10.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 231 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 53W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R950CEATMA1 FAQ

1.How can I place an order for IPD50R950CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R950CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R950CEATMA1 reliable?

The price and inventory of IPD50R950CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R950CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R950CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R950CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R950CEATMA1?

IPD50R950CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R950CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R950CEATMA1?

For technical support, including IPD50R950CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R950CEATMA1 requirements.

6.How does Aetrix verify that IPD50R950CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R950CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R950CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R950CEATMA1?

All IPD50R950CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R950CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R950CEATMA1 part is unused and in its original packaging.

Return procedure for IPD50R950CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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