Infineon Technologies IPU60R600C6AKMA1

Overview

IPU60R600C6AKMA1 from Infineon Technologies is a 600 V, 7.3 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ C6 family, optimized for high-efficiency hard-switching and resonant SMPS topologies. It features R_DS(on) = 0.6 Ω (max), Q_g = 20.5 nC (typ), E_oss = 1.9 µJ @ 400 V, and 500 A/µs body diode di/dt capability - deployed in PFC and main switch stages of server PSUs and telecom rectifiers.

For engineers reviewing the IPU60R600C6AKMA1 datasheet, IPU60R600C6AKMA1 pinout, IPU60R600C6AKMA1 application, or IPU60R600C6AKMA1 equivalent, key selection criteria include its low R_DS(on) × Q_g figure-of-merit, high dv/dt ruggedness (50 V/ns), industrial-grade JEDEC qualification, and IPAK package thermal performance (R_thJC = 2 °C/W).

Technical Context

This CoolMOS™ C6 device implements a charge-compensated superjunction structure enabling simultaneous reduction of conduction and switching losses. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) and plateau voltage (V_GP = 5.4 V) support robust gate drive with standard 10–13 V logic-level controllers.

The MOSFET delivers high commutation ruggedness via controlled body diode recovery (Q_rr = 2.1 µC, t_rr = 250 ns) and supports fast hard-switching at 400–480 V bus voltages without oscillation, validated by 500 A/µs di/dt rating and 133 mJ single-pulse avalanche energy.

Key Specifications

Pinout & Package

IPU60R600C6AKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain pad for thermal enhancement. Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - standard three-terminal configuration compatible with automated SMT assembly and board-level thermal vias under the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPU60R600C6AKMA1, the IPU60R750C6 trades conduction loss for reduced gate drive demand, while the IPP60R600C6 offers superior thermal resistance at the cost of through-hole assembly - both require layout and thermal redesign but retain identical gate drive and protection circuitry.

Availability

IPU60R600C6AKMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and UPS inverters requiring stable component supply, industrial-grade reliability, and SMD-compatible high-voltage switching performance.

Supply support for IPU60R600C6AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

The CoolMOS™ C6 series was engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC converters in industrial and telecom infrastructure - emphasizing low-loss superjunction architecture and robust hard-switching capability.

FAQ

What is the maximum continuous drain current for IPU60R600C6AKMA1 at 100°C case temperature?

The maximum continuous drain current is 4.6 A at T_C = 100°C, derated from 7.3 A at 25°C per the thermal limit defined by R_thJC = 2 °C/W and P_tot = 63 W. This value assumes proper PCB copper area (6 cm²) and vertical mounting without forced airflow, as specified in JEDEC test condition JESD51-2.

Does IPU60R600C6AKMA1 support gate drive with 5 V logic controllers?

No - the gate threshold voltage range is 2.5–3.5 V, but reliable enhancement requires V_GS ≥ 10 V to achieve rated R_DS(on) ≤ 0.6 Ω. Driving with only 5 V results in high on-resistance (>5 Ω), excessive conduction loss, and thermal runaway risk; a dedicated 10–13 V gate driver is mandatory.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves 500 A/µs di/dt and 250 ns t_rr with 2.1 µC Q_rr, significantly faster and more rugged than conventional planar MOSFETs. This enables use in totem-pole PFC and synchronous rectification without external Schottky diodes, reducing component count and improving efficiency at light loads.

Is IPU60R600C6AKMA1 suitable for use in automotive applications?

No - it is qualified for industrial-grade operation (–55°C to +150°C) per JEDEC J-STD-020/JESD22, but lacks AEC-Q101 qualification, automotive-specific stress testing, or PPAP documentation. For automotive traction or onboard charger designs, Infineon's CoolMOS™ CE or C7A series with AEC-Q101 certification must be used instead.