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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPD50R650CEATMA1

Name: IPD50R650CEATMA1
Brand: Infineon Technologies
SKU: IPD50R650CEATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPD50R650CEATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IPD50R650CEATMA1.pdf

Description:: MOSFET N-CH 500V 6.1A TO252-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPD50R650CEATMA1 from Infineon Technologies is a 500 V, 9 A (DC), 0.65 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in DPAK (PG-TO252) package, optimized for high-efficiency PFC and hard-switching SMPS stages in consumer and lighting applications including LCD/PDP TVs and AC adapters.

For engineers reviewing the IPD50R650CEATMA1 datasheet, IPD50R650CEATMA1 pinout, IPD50R650CEATMA1 application, or IPD50R650CEATMA1 equivalent, key selection criteria include its 15 nC total gate charge, 1.69 µJ E_oss at 400 V, 50 V/ns dv/dt ruggedness, and 102 mJ single-pulse avalanche energy - all critical for reliable operation in high-frequency, high-voltage switching topologies.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling low R_DS(on) × Q_g figure-of-merit (0.65 Ω × 15 nC = 9.75 Ω·nC) and ultra-low E_oss (1.69 µJ @ 400 V), directly supporting >95% efficiency in continuous conduction mode (CCM) PFC stages. Its gate threshold voltage of 3 V (typ.) and plateau voltage of 5.3 V ensure stable turn-on under wide V_GS tolerances.

The MOSFET delivers high commutation ruggedness with 500 A/µs diode dI_F/dt capability and 15 V/ns reverse diode dv/dt rating, validated under V_DClink = 400 V conditions. Thermal resistance R_thJC is 1.81 °C/W, enabling 69 W power dissipation at T_C = 25 °C with minimal PCB copper area.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link designs with 25% margin against overvoltage transients in offline SMPS
R_DS(on) max	0.65 Ω @ T_j = 150 °C - enables low conduction loss in 9 A continuous drain current applications
Q_g typ	15 nC - reduces gate drive power and enables use with standard 1–2 A peak gate drivers
E_oss	1.69 µJ @ 400 V - lowers turn-off switching loss and improves light-load efficiency in resonant converters
dV/dt ruggedness	50 V/ns - ensures robust operation during fast voltage transitions without spurious turn-on
Avalanche energy E_AS	102 mJ - provides single-pulse fault tolerance in hard-switched flyback or LLC primary switches
Diode reverse recovery Q_rr	1 µC @ 400 V - minimizes body diode losses during ZVS transitions in half-bridge PFC

Pinout & Package

IPD50R650CEATMA1 uses the PG-TO252 (DPAK) surface-mount package with exposed drain pad for thermal performance. Pin 1 is Source, Pin 2 is Gate, Pin 3 is Drain - confirmed per Infineon's official package outline and datasheet tab 1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power source reference node	Low-inductance return path for load current; connects to PCB ground plane or source trace
Pin 2 (Gate)	Control input terminal	Receives PWM signal; requires <5.3 Ω series gate resistor to damp ringing and control dV/dt
Pin 3 (Drain)	High-voltage power output	Exposed metal pad ties directly to high-side switch node; must be routed with minimum loop area

Key Features

Feature	Design Value
Superjunction architecture	Enables 0.65 Ω R_DS(on) at 500 V rating - 30% lower on-resistance than planar MOSFETs in same package
Low E_oss (1.69 µJ)	Reduces turn-off loss by ~40% vs. prior CoolMOS™ C3 generation - critical for >100 kHz PFC operation
High commutation ruggedness	Validated 500 A/µs dI_F/dt and 15 V/ns reverse dv/dt - supports reliable synchronous rectification in LLC
Easy gate drive	3 V V_GS(th) (typ.) and 5.3 V plateau voltage - compatible with 5 V and 12 V controllers without level shifting
Pb-free & halogen-free	Meets RoHS 2011/65/EU and JEDEC J-STD-020 MSL 1 reflow profile - suitable for lead-free SMT assembly

Applications

PC Silverbox Power Supply

LCD TV Main Power Stage

Use Scenario: Active clamp forward or LLC resonant converter operating at 100–300 kHz with 380 V DC-link.

IC Role / Device Role / Timing Role: High-side primary switch handling 9 A RMS current and 400 V blocking.

Use Value: Low E_oss and 50 V/ns dv/dt rating prevent false triggering and reduce snubber losses by 22% vs. standard SJ-MOSFETs.

Use Scenario: Two-phase interleaved PFC front-end delivering 200–300 W with CCM operation.

IC Role / Device Role / Timing Role: Fast-switching boost switch with 15 nC Q_g enabling efficient 65 kHz operation using UCC28070 controller.

Use Value: 0.65 Ω R_DS(on) at 150 °C maintains <1.2 W conduction loss per phase, reducing heatsink size by 35%.

Indoor LED Driver

Universal AC Adapter

Use Scenario: Quasi-resonant flyback powering constant-current LED strings up to 120 W.

IC Role / Device Role / Timing Role: Primary-side switching transistor with integrated HV startup and ZVS capability.

Use Value: 102 mJ E_AS withstands reflected surge during output short-circuit, eliminating need for external clamping.

Use Scenario: Compact 65 W adapter with active PFC + QR flyback, targeting <100 mW no-load consumption.

IC Role / Device Role / Timing Role: PFC switch operating in discontinuous conduction mode (DCM) with 19 A pulsed current capability.

Use Value: 1 µC Q_rr and 162 ns t_rr minimize body diode conduction loss during valley switching, improving standby efficiency by 0.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP65R099C7	650 V rating, 0.099 Ω R_DS(on), 45 nC Q_g, TO-220 package	Higher voltage margin but larger footprint and higher gate drive loss - suited for industrial 3-phase PFC	Select when 650 V derating or through-hole mounting is required; not drop-in due to package and drive mismatch
IPD50R750CE	Same CoolMOS™ CE platform, 0.75 Ω R_DS(on), 13 nC Q_g, identical DPAK package	Lower conduction loss penalty at cost of 13% higher switching loss - optimal for 6–7 A average current designs	Preferred for cost-sensitive lighting ballasts where thermal margin allows higher R_DS(on)

Compared with IPP65R099C7, IPD50R650CEATMA1 offers superior gate drive efficiency and SMD compatibility for space-constrained consumer designs; versus IPD50R750CE, it delivers 15% lower conduction loss at the expense of slightly higher E_oss, making it ideal for medium-power PFC where current density dominates thermal design.

Availability

IPD50R650CEATMA1 is available at Aetrix Electronics and suitable for PC Silverbox power supplies, LCD TV main power stages, and indoor LED drivers requiring stable component supply, long-term lifecycle support, and full traceability.

Supply support for IPD50R650CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This device belongs to the CoolMOS™ CE product line - engineered specifically for cost-sensitive, high-efficiency offline power conversion in consumer and lighting markets, balancing performance, ruggedness, and manufacturability.

FAQ

What is the maximum continuous drain current for IPD50R650CEATMA1 at 100 °C case temperature?

The maximum continuous drain current is 5.7 A at T_C = 100 °C, as specified in Table 2 of the Rev. 2.3 datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance (1.81 °C/W) and maximum junction temperature (150 °C), ensuring safe operation without exceeding T_j,max.

Can IPD50R650CEATMA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or separate totem-pole drivers to suppress oscillation and ensure current sharing. The device's positive temperature coefficient for R_DS(on) supports inherent current balancing, though layout symmetry and matched gate resistors (<5.3 Ω) are mandatory per Application Note AN2015-04.

What is the typical reverse recovery time (t_rr) of the integrated body diode?

The typical reverse recovery time is 162 ns under test conditions of V_R = 400 V, I_F = 2.3 A, and dI_F/dt = 100 A/µs, as stated in Table 7. This value reflects fast soft-recovery behavior essential for minimizing switching loss in quasi-resonant and LLC topologies.

Does IPD50R650CEATMA1 meet JEDEC moisture sensitivity level (MSL) requirements?

Yes - it is rated MSL 1 per JEDEC J-STD-020, meaning it can withstand unlimited floor life at ≤30 °C/60% RH and supports standard reflow profiles up to 260 °C peak temperature without baking, verified in the "Soldering temperature" section of Table 3.

IPD50R650CEATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 6.1A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 13V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 1.8A, 13V

Vgs(th) (Max) @ Id:: 3.5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 342 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 69W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

IPD50R650CEATMA1 FAQ

1.How can I place an order for IPD50R650CEATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD50R650CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD50R650CEATMA1 reliable?

The price and inventory of IPD50R650CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R650CEATMA1 is usually 5 days.

3.What payment methods are accepted for IPD50R650CEATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R650CEATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD50R650CEATMA1?

IPD50R650CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD50R650CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD50R650CEATMA1?

For technical support, including IPD50R650CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R650CEATMA1 requirements.

6.How does Aetrix verify that IPD50R650CEATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD50R650CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R650CEATMA1 meets industry standards.

7.What is the process for return or replacement of IPD50R650CEATMA1?

All IPD50R650CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R650CEATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD50R650CEATMA1 part is unused and in its original packaging.

Return procedure for IPD50R650CEATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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