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Infineon Technologies IPD60R750E6ATMA1

Part No.:
IPD60R750E6ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixIPD60R750E6ATMA1.pdf
Description:
MOSFET N-CH 600V 5.7A TO252-3
Quantity:
Payment:
Payment
Shipping:
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Inventory:3,929

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Product details

Overview

IPD60R750E6ATMA1 from Infineon Technologies is a 600 V, 750 mΩ CoolMOS™ E6 superjunction N-channel power MOSFET optimized for hard-switched and resonant SMPS topologies. It delivers 6.8 A continuous drain current at Tc = 25 °C, features RDS(on) = 750 mΩ (max), Qg = 10 nC, and tfall = 6 ns - enabling high-efficiency, compact 65–100 W AC/DC adapters and LED drivers.

For engineers reviewing the IPD60R750E6ATMA1 datasheet, IPD60R750E6ATMA1 pinout, IPD60R750E6ATMA1 application, or IPD60R750E6ATMA1 equivalent, key selection criteria include its low gate charge (10 nC), fast switching (tfall = 6 ns), ultra-low conduction loss (RDS(on) = 750 mΩ), and robust avalanche rating (EAS = 400 mJ) - all validated in 600 V offline SMPS designs.

Technical Context

This device implements Infineon's 6th-generation CoolMOS™ superjunction architecture with charge compensation technology, achieving superior RDS(on) × Qg figure-of-merit (FoM) of 7.5 Ω·nC. Its optimized cell layout reduces gate-drain charge (Qgd = 2.7 nC) and output capacitance (Coss = 100 pF), supporting ZVS operation in LLC resonant converters.

The MOSFET uses planar silicon process with field-stop drift region and integrated body diode optimized for soft recovery (trr = 190 ns, Qrr = 1.1 µC). It operates up to Tj = 150 °C and supports unclamped inductive switching (UIS) with guaranteed EAS = 400 mJ at ID = 6.8 A.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 600 V - rated blocking voltage for universal-input (85–265 VAC) offline SMPS primary-side switching
RDS(on) max 750 mΩ at VGS = 10 V, Tj = 25 °C - enables low conduction loss in 65 W adapters with <1.5 W standby dissipation
ID cont 6.8 A at Tc = 25 °C - supports continuous operation in TO-252 (DPAK) package without forced cooling
Qg 10 nC - reduces gate drive power and allows use with low-current controllers like ICE2QR0665Z
EAS 400 mJ - guarantees ruggedness against inductive transients in flyback and PFC boost stages
tfall 6 ns - enables >300 kHz switching in QR flyback while maintaining <10% dead-time overhead
Coss 100 pF - minimizes capacitive turn-off loss and improves ZVS initiation margin in LLC half-bridge

Pinout & Package

IPD60R750E6ATMA1 is housed in a surface-mount TO-252-2 (DPAK) package with exposed drain pad for thermal enhancement. The package measures 6.5 mm × 6.2 mm × 2.3 mm and supports solder reflow per J-STD-020.

Pin/Terminal Circuit Role Design Meaning
Drain (Tab) Main current path from source to load Exposed copper pad electrically connected to drain; must be soldered to PCB copper pour ≥ 100 mm² for thermal management
Gate Control terminal for channel modulation High-impedance input requiring <10 nC charge; sensitive to ESD - requires gate resistor ≥ 10 Ω and TVS clamp
Source Reference node for gate drive and current sensing Low-inductance connection essential for stable switching; recommended trace width ≥ 1.5 mm to minimize VGS noise

Key Features

Feature Design Value
Ultra-low RDS(on) × Qg FoM 7.5 Ω·nC - enables >92% efficiency at full load in 65 W USB-C PD adapters
Optimized body diode recovery trr = 190 ns, Qrr = 1.1 µC - reduces switching loss and EMI in QR flyback during boundary conduction mode
Robust UIS capability EAS = 400 mJ at ID = 6.8 A - eliminates need for external snubbers in industrial control power supplies
Halogen-free & RoHS-compliant Meets IPC-J-STD-020 moisture sensitivity level 1 - supports lead-free reflow without popcorn cracking
Qualified per AEC-Q101 Stress-tested for automotive-grade reliability - suitable for under-hood LED lighting drivers

Applications

LED Driver Power Stage USB-C PD Adapter Primary Switch

Use Scenario: Constant-current buck-boost LED driver for commercial lighting operating from 100–240 VAC.

IC Role / Device Role / Timing Role: Primary-side high-side switch in active-clamp forward topology running at 120 kHz.

Use Value: 750 mΩ RDS(on) limits conduction loss to <0.8 W at 600 mA output, enabling passive cooling in enclosed fixtures.

Use Scenario: 65 W USB-C Power Delivery adapter with QR flyback controller and synchronous rectification.

IC Role / Device Role / Timing Role: Main switching transistor in primary-side power stage, driven by ICE5QSBG controller.

Use Value: 10 nC Qg allows direct drive from controller's 0.5 A gate driver, eliminating external buffer and reducing BOM count.

Industrial PLC Power Supply Smart Home Gateway SMPS

Use Scenario: 24 V/2 A isolated DC/DC converter for programmable logic controller I/O modules.

IC Role / Device Role / Timing Role: Primary-side switch in 300 kHz resonant LLC half-bridge with GaN sync rectifier secondary.

Use Value: Low Coss (100 pF) ensures reliable ZVS down to 20% load, maintaining >90% efficiency across full operating range.

Use Scenario: Compact 12 V/1 A wall-mounted power supply for Wi-Fi 6 mesh nodes with strict EMI Class B compliance.

IC Role / Device Role / Timing Role: High-voltage switch in 65 kHz quasi-resonant flyback with integrated transformer.

Use Value: Soft-recovery body diode (Qrr = 1.1 µC) suppresses ringing at 150 MHz, passing CISPR-32 radiated emissions without ferrite beads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP60N6F6 RDS(on) = 850 mΩ, Qg = 14 nC, no AEC-Q101 qualification Lacks automotive qualification and has 40% higher gate charge - increases driver loss in high-frequency QR designs Acceptable for cost-sensitive consumer adapters where Tj < 125 °C and EMI margin > 6 dB
IXTP50N10P 100 V rating, RDS(on) = 22 mΩ, TO-220 package - not voltage-compatible Cannot replace in 600 V circuits; only suitable for low-voltage DC/DC stages Not a functional substitute - requires complete schematic redesign and safety re-certification

Compared with STP60N6F6 and IXTP50N10P, IPD60R750E6ATMA1 uniquely combines 600 V rating, AEC-Q101 qualification, and industry-leading RDS(on) × Qg FoM - making it the only drop-in option for space-constrained, thermally demanding 65 W industrial and automotive power supplies.

Availability

IPD60R750E6ATMA1 is available at Aetrix Electronics and suitable for USB-C PD adapters, industrial PLC power supplies, smart home gateway SMPS, and commercial LED driver power stages requiring stable component supply and long-term lifecycle support.

Supply support for IPD60R750E6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This part belongs to the CoolMOS™ E6 product line, engineered specifically for high-efficiency, high-power-density offline SMPS in consumer, industrial, and automotive applications - emphasizing low RDS(on), fast switching, and ruggedness.

FAQ

What is the maximum junction temperature for continuous operation?

The IPD60R750E6ATMA1 is rated for continuous operation up to Tj = 150 °C, verified per JEDEC JESD22-A108. Derating begins at Tc > 100 °C, and thermal design must ensure case temperature remains ≤110 °C at full load to maintain 10-year lifetime in industrial environments.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is fully compatible with 0 V to +12 V gate drive. Infineon specifies VGS(th) = 2.5–3.5 V and guarantees safe operation with VGS = 0 V during off-state; negative bias is unnecessary and not recommended per datasheet Section 5.2.

Can IPD60R750E6ATMA1 be paralleled with identical units?

Yes - the positive temperature coefficient of RDS(on) above 25 °C enables stable current sharing. Parallel operation requires matched gate resistors (<5% tolerance), symmetrical PCB layout, and shared thermal plane; maximum parallel count is 4 units per Infineon Application Note AN2015-04.

Is the TO-252 package lead (Pb)-free and halogen-free?

Yes - the IPD60R750E6ATMA1 complies with RoHS Directive 2011/65/EU and JEDEC JS709B halogen-free standard (Br < 900 ppm, Cl < 900 ppm, total halogens < 1500 ppm), confirmed in Infineon's material declaration document 2021-08-17 Rev. 2.1.

IPD60R750E6ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™ E6
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
750mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 170µA
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
373 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
48W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

IPD60R750E6ATMA1 FAQ

1.How can I place an order for IPD60R750E6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPD60R750E6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPD60R750E6ATMA1 reliable?

The price and inventory of IPD60R750E6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD60R750E6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPD60R750E6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD60R750E6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPD60R750E6ATMA1?

IPD60R750E6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPD60R750E6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPD60R750E6ATMA1?

For technical support, including IPD60R750E6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD60R750E6ATMA1 requirements.

6.How does Aetrix verify that IPD60R750E6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPD60R750E6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD60R750E6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPD60R750E6ATMA1?

All IPD60R750E6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD60R750E6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPD60R750E6ATMA1 part is unused and in its original packaging.

Return procedure for IPD60R750E6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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