Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB80N06S208ATMA2

Name: IPB80N06S208ATMA2
Brand: Infineon Technologies
SKU: IPB80N06S208ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPB80N06S208ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB80N06S208ATMA2.pdf

Description:: MOSFET N-CH 55V 80A TO263-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,139

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPB80N06S208ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in PG-TO263-3-2 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 25 °C, and ultra-low 7.7 mΩ max R_DS(on) at V_GS = 10 V. It is AEC-Q101 qualified, supports 175 °C operation, and is 100% avalanche tested - deployed in automotive DC-DC converters and motor control inverters.

For engineers reviewing the IPB80N06S208ATMA2 datasheet, IPB80N06S208ATMA2 pinout, IPB80N06S208ATMA2 application, or IPB80N06S208ATMA2 equivalent, key selection criteria include its 0.7 K/W junction-to-case thermal resistance, 72–96 nC total gate charge, 55–70 ns reverse recovery time, and SMD-compatible TO263 footprint for high-current switching in thermally constrained environments.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency power stages. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 190 pF reverse transfer capacitance (C_rss) and 14–32 ns propagation delays support fast, stable hard-switching up to 100 kHz.

The integrated body diode exhibits 0.9–1.3 V forward voltage at 80 A and 25 °C, with 85–110 nC reverse recovery charge - critical for synchronous rectification and freewheeling in buck, half-bridge, and H-bridge topologies where diode conduction and recovery behavior directly impact efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum blocking voltage for 12 V/24 V automotive and industrial bus applications
R_DS(on) max	7.7 mΩ at V_GS = 10 V, I_D = 58 A - enables <1 W conduction loss at 80 A in PCB-mounted high-current paths
I_D continuous	80 A at T_C = 25 °C - supported by 0.7 K/W R_thJC and 215 W P_tot rating under heatsink conditions
E_AS	450 mJ single-pulse avalanche energy - ensures ruggedness against inductive load switching transients without external snubbers
Q_g total	72–96 nC - determines gate driver current requirement (~1–2 A peak for 100 ns turn-on with 3.3 Ω R_G)
t_rr	55–70 ns - defines minimum dead-time setting in bridge configurations to prevent shoot-through
V_GS(th)	2.1–4.0 V - provides noise-immune turn-on margin above typical 1.8–3.3 V logic thresholds

Pinout & Package

IPB80N06S208ATMA2 uses the PG-TO263-3-2 surface-mount package (D²PAK), with drain connected to the exposed copper pad for thermal and electrical performance. The three terminals are arranged in standard D²PAK layout: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Receives 10 V drive signal; requires ≤20 V absolute max per specification; sensitive to ESD
Pin 2 (Drain)	High-side power terminal	Connected to PCB copper area (≥6 cm²) for thermal dissipation; electrically tied to exposed tab
Pin 3 (Source)	Reference node / return path	Serves as local ground reference for gate drive; carries full load current and diode freewheeling current

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis systems requiring zero-failure reliability over 15-year service life
MSL1 reflow rating	Withstands 260 °C peak solder profile without delamination - compatible with standard SMT assembly lines
100% avalanche tested	Each unit passes single-pulse E_AS stress test - eliminates field failure risk from inductive switching surges
Green (lead-free) package	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1
Optimized C_iss/C_oss ratio	2860 pF input / 740 pF output capacitance - balances switching speed and voltage stability during dV/dt transitions

Applications

Automotive DC-DC Converters

Electric Power Steering (EPS) Inverters

Use Scenario: 12 V to 48 V bidirectional buck-boost conversion in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 50–100 kHz with forced-air cooling.

Use Value: 7.7 mΩ R_DS(on) reduces conduction loss by >35% vs. legacy 12 mΩ devices, enabling >95% peak efficiency at 6 kW.

Use Scenario: Three-phase inverter driving 300–500 W brushless DC motor in column-assist EPS modules.

IC Role / Device Role / Timing Role: Low-side switching element in 60 ° commutation with 10 µs dead-time control.

Use Value: 55–70 ns t_rr and 85–110 nC Q_rr minimize cross-conduction loss and EMI during phase-current reversal.

Industrial Motor Drives

Server VRMs

Use Scenario: 200–500 W variable-speed drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Half-bridge leg switch in 20 kHz PWM-controlled inverter with isolated gate drive.

Use Value: 175 °C T_j rating allows derating-free operation in sealed enclosures with ambient up to 105 °C.

Use Scenario: High-current, low-voltage (0.8–1.2 V) power stage in 3rd-gen server CPU VRMs.

IC Role / Device Role / Timing Role: Synchronous FET in multiphase buck converter with 500 kHz–1 MHz switching.

Use Value: 0.7 K/W R_thJC enables direct heatsink mounting on VRM PCB, reducing thermal interface resistance by 40% vs. TO-220 alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP80N06S2-08	Same die, TO-220-3-1 through-hole package; R_thJA = 62 K/W (leaded); no exposed drain pad	Better suited for prototyping, low-volume industrial controls with manual heatsinking	Select when board space permits through-hole mounting and thermal design uses bolted heatsinks
IPI80N06S2-08	Same die, TO-262-3-1 (I²PAK) package; R_thJC = 0.7 K/W but lower PCB copper coupling than TO263	Used in legacy automotive ECUs where I²PAK footprint matches existing tooling	Choose only for drop-in replacement in pre-qualified I²PAK-based designs; not recommended for new SMD layouts

Compared with IPP80N06S2-08 and IPI80N06S2-08, IPB80N06S208ATMA2 delivers superior thermal performance in SMD applications due to its TO263-3-2 drain-tab construction, enabling higher sustained current density and lower system-level thermal resistance in automated production.

Availability

IPB80N06S208ATMA2 is available at Aetrix Electronics and suitable for automotive DC-DC converters, electric power steering inverters, and industrial motor drives requiring stable component supply across extended temperature and lifetime requirements.

Supply support for IPB80N06S208ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-current, high-efficiency switching in automotive and industrial power conversion systems where thermal robustness and avalanche reliability are mandatory.

FAQ

Is IPB80N06S208ATMA2 pin-compatible with IPP80N06S2-08?

No - IPB80N06S208ATMA2 uses PG-TO263-3-2 (D²PAK) packaging with drain-connected tab, while IPP80N06S2-08 uses PG-TO220-3-1 with isolated tab. Footprint, thermal mounting, and PCB layout are incompatible; mechanical redesign is required for substitution.

What is the maximum gate-source voltage rating?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Exceeding this risks permanent oxide damage; gate drivers must clamp to ≤±15 V for long-term reliability in automotive applications.

Does this MOSFET require a gate resistor for safe operation?

Yes - a series gate resistor (typically 3.3 Ω) is required to control dV/dt and suppress oscillation during switching. The 72–96 nC total gate charge and 190 pF Crss make it susceptible to ringing without proper gate impedance matching to the driver output capability.

Can IPB80N06S208ATMA2 be used in linear mode (as a pass transistor)?

No - it is not characterized or rated for linear (SOA-limited) operation. The Safe Operating Area curves show limited capability beyond 10 µs pulses; sustained linear use risks thermal runaway due to positive temperature coefficient of R_DS(on) and lack of SOA validation beyond 1 ms.

IPB80N06S208ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.7mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 96 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 215W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB80N06S208ATMA2 FAQ

1.How can I place an order for IPB80N06S208ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB80N06S208ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB80N06S208ATMA2 reliable?

The price and inventory of IPB80N06S208ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB80N06S208ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB80N06S208ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB80N06S208ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB80N06S208ATMA2?

IPB80N06S208ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB80N06S208ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB80N06S208ATMA2?

For technical support, including IPB80N06S208ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB80N06S208ATMA2 requirements.

6.How does Aetrix verify that IPB80N06S208ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB80N06S208ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB80N06S208ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB80N06S208ATMA2?

All IPB80N06S208ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB80N06S208ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB80N06S208ATMA2 part is unused and in its original packaging.

Return procedure for IPB80N06S208ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…