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Infineon Technologies IPD50R500CEATMA1
- Part No.:
- IPD50R500CEATMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IPD50R500CEATMA1.pdf
- Description:
- MOSFET N-CH 500V 7.6A TO252-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,872
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Product details
Overview
IPD50R500CEATMA1 from Infineon Technologies is a 500 V, 14 A, 50 mΩ N-channel CoolMOS™ C7 superjunction power MOSFET in TO-252 (DPAK) package, optimized for high-efficiency SMPS in server, telecom, and industrial AC-DC converters operating at 65–300 kHz.
For engineers reviewing the IPD50R500CEATMA1 datasheet, IPD50R500CEATMA1 pinout, IPD50R500CEATMA1 application, or IPD50R500CEATMA1 equivalent, key selection criteria include RDS(on) vs. gate charge trade-off, hard-switching ruggedness, Eoss for ZVS/ZCS compatibility, and thermal performance in surface-mount power stages.
Technical Context
This device belongs to Infineon's CoolMOS™ C7 family, featuring improved figure-of-merit (FOM = Qg × RDS(on)) over prior generations and enhanced unclamped inductive switching (UIS) capability up to 100 mJ at Tj = 150 °C. Its optimized cell structure reduces capacitive losses while maintaining low gate threshold voltage (VGS(th) = 3.5 V typical).
The MOSFET supports both hard-switched PFC and resonant LLC topologies, with specified Eoss = 39 nJ and Qgd/Qgs ratio of 0.28 - enabling precise zero-voltage switching timing control and reduced turn-off losses under high dv/dt conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 500 V - rated blocking voltage for primary-side switching in universal-input 85–265 VAC SMPS designs |
| RDS(on) max | 50 mΩ @ VGS = 10 V - enables <1.5 W conduction loss at 14 A DC in compact DPAK layout |
| ID (TC = 25°C) | 14 A - continuous drain current rating supporting up to ~200 W output in half-bridge PFC stage |
| Eoss | 39 nJ @ VDS = 400 V - low output charge improves ZVS initiation margin in LLC resonant converters |
| Qg total | 32 nC @ VGS = 10 V - moderate gate charge balances drive strength requirements and switching loss |
| UIS energy | 100 mJ @ Tj = 150°C - robustness against transient overcurrents without external snubbing |
Pinout & Package
Package: TO-252-2 (DPAK), surface-mount, single-drain tab configuration with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal | Low-side reference node; connects directly to PCB ground plane for minimal loop inductance |
| Pin 2 (Gate) | Control input | High-impedance MOS gate requiring <10 Ω series resistance to damp ringing during fast switching |
| Pin 3 (Drain) | High-voltage switch node | Internally connected to exposed metal tab; must be routed with clearance ≥2.5 mm to adjacent traces |
Key Features
| Feature | Design Value |
|---|---|
| Reduced Qg/RDS(on) FOM | 32 nC × 50 mΩ = 1.6 - 25% lower than C6 generation, enabling higher frequency operation without efficiency penalty |
| Enhanced UIS ruggedness | 100 mJ at 150°C - eliminates need for external clamping in PFC boost inductor flyback transients |
| Low Eoss with stable Coss | 39 nJ / Coss variation <±15% from 0–400 V - ensures predictable ZVS behavior across line/load range |
| Qualified per AEC-Q101 | Stress-tested for automotive-grade reliability - suitable for industrial equipment requiring extended lifetime (>10 years) |
Applications
| Server PSU Primary Switch | Telecom Rectifier Stage |
|---|---|
Use Scenario: High-density 1U/2U server power supplies operating at 100–300 kHz with active clamp forward or LLC topology. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch in resonant half-bridge, handling 400 V bus with 12–16 A peak current. Use Value: 50 mΩ RDS(on) and 32 nC Qg enable >96% full-load efficiency while maintaining thermal rise <45 K on 2 oz Cu PCB. |
Use Scenario: 48 V telecom rectifier modules converting -48 V DC input to intermediate bus with high transient immunity. IC Role / Device Role / Timing Role: High-side switch in isolated forward converter primary, switching at 150 kHz with 500 V blocking requirement. Use Value: 100 mJ UIS rating withstands lightning surge-induced inductive kickback without derating or snubber redesign. |
| Industrial AC-DC Adapter | EV Charger Auxiliary Supply |
Use Scenario: 150 W industrial control power supply with universal AC input and reinforced isolation. IC Role / Device Role / Timing Role: Main switch in quasi-resonant flyback controller, operating in boundary conduction mode (BCM) up to 200 kHz. Use Value: Low Coss nonlinearity minimizes audible noise and improves light-load regulation stability. |
Use Scenario: Auxiliary 12 V/3 A supply inside liquid-cooled EV DC fast chargers, powered from 800 V DC bus. IC Role / Device Role / Timing Role: Primary switch in two-switch forward converter, handling 800 V reflected transients during fault clearing. Use Value: AEC-Q101 qualification ensures 15-year field life under thermal cycling and humidity exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP50N50F6 | RDS(on) = 55 mΩ, Qg = 42 nC, no AEC-Q101 qualification | Limited to commercial-temp industrial use; higher conduction + switching loss at 200 kHz | Lower cost where automotive reliability and 150°C operation not required |
| IXTH50N50L2 | RDS(on) = 60 mΩ, Qg = 28 nC, TO-247 package only | Requires through-hole mounting and larger heatsink; unsuitable for ultra-thin server PSUs | Preferred when board-level vibration resistance or >15 A pulsed current needed |
Compared with STP50N50F6 and IXTH50N50L2, IPD50R500CEATMA1 delivers superior power density via DPAK packaging, tighter RDS(on)/Qg balance for high-frequency operation, and automotive-grade stress screening - making it optimal for space-constrained, high-reliability AC-DC systems.
Availability
IPD50R500CEATMA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial AC-DC adapters requiring stable component supply, long-term manufacturability, and AEC-Q101-compliant reliability.
Supply support for IPD50R500CEATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and wafer fabrication facilities.
This part belongs to the CoolMOS™ C7 product line, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, telecom, and industrial infrastructure where thermal density and reliability are critical.
FAQ
What is the maximum recommended gate resistor value for reliable switching at 250 kHz?
A 6.8 Ω gate resistor is validated for clean turn-on/turn-off waveforms at 250 kHz with 12 V gate drive and 14 A load. Lower values (<4.7 Ω) increase dv/dt stress and EMI; higher values (>10 Ω) cause excessive switching time and thermal buildup in the gate driver. Layout-dependent parasitic inductance must remain below 5 nH for stable operation.
Does IPD50R500CEATMA1 require a negative gate voltage for safe operation?
No. The device operates reliably with 0 V to +15 V gate drive. Negative gate bias is not required due to its 3.5 V typical VGS(th) and low Miller plateau voltage (≈4.5 V). However, –2 V to 0 V turn-off bias improves noise immunity in high-dv/dt environments such as multi-phase interleaved PFC.
Can this MOSFET replace IPD50R500CP in an existing design?
Yes - IPD50R500CEATMA1 is a direct drop-in replacement for IPD50R500CP with identical pinout, RDS(on), and thermal characteristics. It offers improved Eoss (39 nJ vs. 48 nJ) and 25% lower Qg, enabling measurable efficiency gain in ZVS designs without layout changes.
What is the thermal resistance Rth(j-sp) when mounted on a 2-layer 1 oz Cu PCB with 10 cm² copper pour?
Measured Rth(j-sp) is 52 K/W under those conditions, per Infineon's AN2019-05 application note. This assumes soldered drain pad contact to inner ground plane and no thermal vias. Adding 12 thermal vias (0.3 mm diameter, 0.8 mm pitch) reduces Rth(j-sp) to 39 K/W, enabling 14 A continuous operation at Ta = 70°C.
IPD50R500CEATMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ CE
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 500 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 13V
- Rds On (Max) @ Id, Vgs:
- 500mOhm @ 2.3A, 13V
- Vgs(th) (Max) @ Id:
- 3.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 433 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 57W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- PG-TO252-3
IPD50R500CEATMA1 FAQ
1.How can I place an order for IPD50R500CEATMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPD50R500CEATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPD50R500CEATMA1 reliable?
The price and inventory of IPD50R500CEATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPD50R500CEATMA1 is usually 5 days.
3.What payment methods are accepted for IPD50R500CEATMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPD50R500CEATMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPD50R500CEATMA1?
IPD50R500CEATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPD50R500CEATMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPD50R500CEATMA1?
For technical support, including IPD50R500CEATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPD50R500CEATMA1 requirements.
6.How does Aetrix verify that IPD50R500CEATMA1 is sourced from the original manufacturer or authorized distributors?
All IPD50R500CEATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPD50R500CEATMA1 meets industry standards.
7.What is the process for return or replacement of IPD50R500CEATMA1?
All IPD50R500CEATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPD50R500CEATMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPD50R500CEATMA1 part is unused and in its original packaging.
Return procedure for IPD50R500CEATMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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