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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPB77N06S212ATMA2

Name: IPB77N06S212ATMA2
Brand: Infineon Technologies
SKU: IPB77N06S212ATMA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPB77N06S212ATMA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: IPB77N06S212ATMA2.pdf

Description:: MOSFET N-CH 55V 77A TO263-3

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Product details

Overview

IPB77N06S212ATMA2 from Infineon Technologies is an N-channel enhancement-mode OptiMOS® power MOSFET rated for 55 V V_DS, 77 A continuous drain current at T_C = 25 °C, and ultra-low 9.5–11.7 mΩ R_DS(on) (SMD version). It is AEC-Q101 qualified, operates up to 175 °C, and is 100% avalanche tested - deployed in automotive DC-DC converters, motor control inverters, and high-efficiency power supplies.

For engineers reviewing the IPB77N06S212ATMA2 datasheet, IPB77N06S212ATMA2 pinout, IPB77N06S212ATMA2 application, or IPB77N06S212ATMA2 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, thermal resistance (R_thJC = 0.95 K/W), avalanche energy rating (280 mJ), diode forward voltage (0.9–1.3 V), and SMD-compatible PG-TO263-3-2 package compatibility with PCB cooling requirements.

Technical Context

This MOSFET uses Infineon's OptiMOS® 2 technology optimized for low conduction and switching losses in high-current, medium-voltage applications. Its gate threshold voltage (2.1–4.0 V) enables robust TTL/CMOS-level drive compatibility, while the 5.6 V gate plateau voltage supports stable Miller region control during hard-switching transitions.

The device integrates a co-packaged body diode with 45–60 ns reverse recovery time and 64–80 nC Q_rr, enabling synchronous rectification and freewheeling operation in buck, half-bridge, and H-bridge topologies without external diode supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage compatible with 48 V automotive and industrial bus systems.
R_DS(on) max (SMD)	11.7 mΩ - Enables ≤1.2 W conduction loss at 77 A, critical for thermally constrained PCB layouts.
I_D cont @ T_C=25°C	77 A - Supports high-current motor phases or primary-side switches in >1 kW power stages.
E_AS	280 mJ - Withstands single-pulse inductive energy without failure, eliminating need for external snubbers in relay driving or solenoid control.
R_thJC	0.95 K/W - Allows direct heatsink mounting for efficient thermal path; enables 158 W power dissipation at T_C = 25 °C.
Q_g total	45–60 nC - Determines gate driver current requirement (~1.2 A peak for 50 ns turn-on with 6.2 Ω R_G).
V_SD @ I_F=77 A	0.9–1.3 V - Low forward drop reduces freewheeling loss in high-duty-cycle PWM applications.

Pinout & Package

IPB77N06S212ATMA2 is housed in PG-TO263-3-2 (D²PAK) surface-mount package with isolated drain tab for PCB thermal pad attachment. The package supports high-current routing and meets MSL1 reflow profile (peak 260 °C).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (low-side reference)	Common return path for load current; connects to ground plane or low-side shunt resistor.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; driven via gate resistor to suppress ringing.
Pin 3 (Drain)	Power output / high-side connection	Exposed copper tab - electrically connected to drain; must be soldered to ≥6 cm² copper pour for R_thJA = 40 K/W.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control modules and EPS.
100% unclamped inductive switching (UIS) tested	Guarantees ruggedness against voltage spikes in motor commutation and relay de-energization.
Green (lead-free) package	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL1 reflow standard.
Optimized body diode Q_rr	64–80 nC reverse recovery charge minimizes switching loss and EMI in synchronous rectifier mode.
175 °C maximum junction temperature	Enables operation in under-hood environments without derating in ambient temperatures up to 125 °C.

Applications

Automotive DC-DC Converter

Industrial Motor Inverter

Use Scenario: Step-down conversion from 48 V battery to 12 V auxiliary rail in mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-side synchronous rectifier switch operating at 200–500 kHz with 50% duty cycle.

Use Value: Ultra-low R_DS(on) reduces conduction loss by >35% vs. legacy 15 mΩ devices, improving system efficiency from 92% to 94.5%.

Use Scenario: Three-phase inverter stage driving 3 kW BLDC motor in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side power switch in 60 kHz PWM bridge leg with fast freewheeling via integrated body diode.

Use Value: 45–60 ns t_rr and low Q_rr cut switching loss by 22% compared to standard trench MOSFETs, reducing heatsink size by 30%.

Server PSU Primary Switch

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Primary-side switch in LLC resonant converter for 1.5 kW server power supply.

IC Role / Device Role / Timing Role: Hard-switched main transistor handling 77 A peak current with zero-voltage switching assist.

Use Value: 280 mJ E_AS withstands transient overloads during startup and fault conditions without latch-up or parametric shift.

Use Scenario: Boost switch in two-stage OBC PFC front-end operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-efficiency switching element with gate plateau voltage of 5.6 V ensuring clean Miller clamping.

Use Value: 9.5–11.7 mΩ R_DS(on) at 10 V drive enables >98.2% PFC efficiency at full load, meeting 80 PLUS Titanium requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP77N06S2-12	Same die, TO-220-3 through-hole package; R_thJC = 0.95 K/W but higher R_thJA (62 K/W on minimal footprint)	Suitable for prototyping or low-volume industrial controls where manual assembly and heatsink mounting are preferred	Select when board space allows through-hole mounting and thermal management uses bolted heatsinks instead of PCB copper area.
IPB80N04S4-02	40 V V_DS, 80 A, 2.0 mΩ R_DS(on); lower voltage rating but significantly lower on-resistance	Better suited for 12–24 V systems like e-bike controllers or telecom rectifiers where 55 V margin is excessive	Choose only if system bus voltage remains ≤32 V; not safe for 48 V automotive transients (ISO 7637-2 Pulse 5a).

Compared with IPP77N06S2-12, the IPB77N06S212ATMA2 offers superior thermal performance in SMD layouts due to lower R_thJA (40 K/W with 6 cm² copper), while IPB80N04S4-02 trades voltage headroom for ultra-low conduction loss - making it unsuitable for 48 V automotive use but optimal for cost-sensitive 24 V industrial drives.

Availability

IPB77N06S212ATMA2 is available at Aetrix Electronics and suitable for automotive power conversion, industrial motor control, and high-reliability server power supply designs requiring stable component supply and long-term lifecycle support.

Supply support for IPB77N06S212ATMA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the OptiMOS® 2 power MOSFET product line, engineered specifically for high-current, medium-voltage switching in automotive and industrial power systems demanding low R_DS(on), ruggedness, and AEC-Q101 compliance.

FAQ

What is the maximum allowable gate-source voltage for IPB77N06S212ATMA2?

The absolute maximum gate-source voltage is ±20 V, qualified at both -20 V and +20 V per datasheet Rev. 1.0. Operation beyond this range risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification, with minimum 6 V to ensure reliable turn-on across temperature and process variation.

Does IPB77N06S212ATMA2 include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 77 A continuous forward current rating, 0.9–1.3 V forward voltage at 77 A and 25 °C, and 45–60 ns reverse recovery time. Q_rr is 64–80 nC, enabling use in synchronous rectification without external diodes in many medium-frequency applications.

Can IPB77N06S212ATMA2 be used in linear (analog) mode operation?

No - this device is designed for switching operation only. Its Safe Operating Area (SOA) curve shows limited linear-mode capability: at V_DS = 20 V, maximum sustainable current drops to ~15 A with pulse width <10 ms. Continuous linear use causes rapid thermal runaway due to positive temperature coefficient of R_DS(on).

Is the PG-TO263-3-2 package lead-free and RoHS-compliant?

Yes, the IPB77N06S212ATMA2 package is green (lead-free) and fully compliant with RoHS Directive 2011/65/EU. It also meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1), allowing unlimited floor life and peak reflow up to 260 °C.

IPB77N06S212ATMA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.7mOhm @ 38A, 10V

Vgs(th) (Max) @ Id:: 4V @ 93µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1770 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 158W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO263-3-2

IPB77N06S212ATMA2 FAQ

1.How can I place an order for IPB77N06S212ATMA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPB77N06S212ATMA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPB77N06S212ATMA2 reliable?

The price and inventory of IPB77N06S212ATMA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPB77N06S212ATMA2 is usually 5 days.

3.What payment methods are accepted for IPB77N06S212ATMA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPB77N06S212ATMA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPB77N06S212ATMA2?

IPB77N06S212ATMA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPB77N06S212ATMA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPB77N06S212ATMA2?

For technical support, including IPB77N06S212ATMA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPB77N06S212ATMA2 requirements.

6.How does Aetrix verify that IPB77N06S212ATMA2 is sourced from the original manufacturer or authorized distributors?

All IPB77N06S212ATMA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPB77N06S212ATMA2 meets industry standards.

7.What is the process for return or replacement of IPB77N06S212ATMA2?

All IPB77N06S212ATMA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPB77N06S212ATMA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPB77N06S212ATMA2 part is unused and in its original packaging.

Return procedure for IPB77N06S212ATMA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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