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Home > Products  > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

FETs, MOSFETs

Photo Mfr. Part # Availability Price Quantity Datasheet Series Package/Case Packaging Product Status FET Type Technology Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Drive Voltage (Max Rds On, Min Rds On) Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Vgs (Max) Input Capacitance (Ciss) (Max) @ Vds FET Feature Power Dissipation (Max) Operating Temperature Grade Qualification Mounting Type Supplier Device Package
LSIC1MO120G0120

LSIC1MO120G0120

MOSFET SIC 1200V 18A TO247-4L

Littelfuse Inc.

 9,987 0.00
RFQ
LSIC1MO120G0120

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 27A (Tc) 20V 150mOhm @ 14A, 20V 4V @ 7mA 63 nC @ 20 V +22V, -6V 1130 pF @ 800 V - 156W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
LSIC1MO120G0080

LSIC1MO120G0080

MOSFET SIC 1200V 25A TO247-4L

Littelfuse Inc.

 7,766 0.00
RFQ
LSIC1MO120G0080

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 39A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 92 nC @ 20 V +22V, -6V 170 pF @ 800 V - 214W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
LSIC1MO120G0160

LSIC1MO120G0160

MOSFET SIC 1200V 14A TO247-4L

Littelfuse Inc.

 6,871 0.00
RFQ
LSIC1MO120G0160

Datasheet

 		- TO-247-4 Tube Active N-Channel SiCFET (Silicon Carbide) 1200 V 22A (Tc) 20V 200mOhm @ 10A, 20V 4V @ 5mA 50 nC @ 20 V +22V, -6V 890 pF @ 800 V - 125W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-247-4L
AUXNSF2804STRL7P

AUXNSF2804STRL7P

MOSFET N-CH

Infineon Technologies

 9,055 0.00
RFQ

-

 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
TK430A60F,S4X(S

TK430A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

 6,663 0.00
RFQ
TK430A60F,S4X(S

Datasheet

 		U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Ta) 10V 430mOhm @ 6.5A, 10V 4V @ 1.75mA 48 nC @ 10 V ±30V 1940 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
TK370A60F,S4X(S

TK370A60F,S4X(S

MOSFET N-CH

Toshiba Semiconductor and Storage

 4,152 0.00
RFQ
TK370A60F,S4X(S

Datasheet

 		U-MOSIX TO-220-3 Full Pack Bulk Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 370mOhm @ 7.5A, 10V 4V @ 2.04mA 55 nC @ 10 V ±30V 2200 pF @ 300 V - 45W (Tc) 150°C - - Through Hole TO-220SIS
FQD9N25TM-SBEK002

FQD9N25TM-SBEK002

MOSFET N-CH 250V 7.4A TO252AA

onsemi

 6,769 0.00
RFQ

-

 - TO-252-3, DPAK (2 Leads + Tab), SC-63 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 250 V 7.4A (Tc) 10V 420mOhm @ 3.7A, 10V 5V @ 250µA 20 nC @ 10 V ±30V 700 pF @ 25 V - 2.5W (Ta), 55W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount TO-252AA
FDP13AN06A0-SW82126

FDP13AN06A0-SW82126

MOSFET N-CH 60V TO220-3

onsemi

 3,392 0.00
RFQ

-

 - TO-220-3 Tape & Reel (TR) Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10.9A (Ta), 62A (Tc) 6V, 10V 13.5mOhm @ 62A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 1350 pF @ 25 V - 115W (Tc) -55°C ~ 175°C (TJ) - - Through Hole TO-220-3
IGT40R070D1ATMA1

IGT40R070D1ATMA1

GAN HV

Infineon Technologies

 2,653 0.00
RFQ
IGT40R070D1ATMA1

Datasheet

 		CoolGaN™ 8-PowerSFN Bulk Discontinued at Digi-Key N-Channel GaNFET (Gallium Nitride) 400 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 382 pF @ 320 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGOT60R070D1E8220AUMA1

IGOT60R070D1E8220AUMA1

GAN HV

Infineon Technologies

 9,087 0.00
RFQ

-

 CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-87
IGT60R070D1E8220ATMA1

IGT60R070D1E8220ATMA1

GAN HV

Infineon Technologies

 3,479 0.00
RFQ

-

 CoolGaN™ 8-PowerSFN Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-HSOF-8-3
IGO60R070D1E8220AUMA1

IGO60R070D1E8220AUMA1

GAN HV

Infineon Technologies

 4,134 0.00
RFQ

-

 CoolGaN™ 20-PowerSOIC (0.433", 11.00mm Width) Bulk Obsolete N-Channel GaNFET (Gallium Nitride) 600 V 31A (Tc) - - 1.6V @ 2.6mA - -10V 380 pF @ 400 V - 125W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount PG-DSO-20-85
PHM2230DLS/1X

PHM2230DLS/1X

MOSFET

Nexperia USA Inc.

 8,234 0.00
RFQ

-

 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN0R7-25YLD/1X

PSMN0R7-25YLD/1X

MOSFET

Nexperia USA Inc.

 2,768 0.00
RFQ
PSMN0R7-25YLD/1X

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN3R0-30YLD/1X

PSMN3R0-30YLD/1X

MOSFET

Nexperia USA Inc.

 3,140 0.00
RFQ
PSMN3R0-30YLD/1X

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK9Y7R6-40E/DMANX

BUK9Y7R6-40E/DMANX

MOSFET

Nexperia USA Inc.

 5,397 0.00
RFQ
BUK9Y7R6-40E/DMANX

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PHM2230DLSX

PHM2230DLSX

MOSFET

Nexperia USA Inc.

 7,564 0.00
RFQ

-

 - - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R0-25YLD/1X

PSMN1R0-25YLD/1X

MOSFET

Nexperia USA Inc.

 3,631 0.00
RFQ
PSMN1R0-25YLD/1X

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
PSMN1R4-40YLD/1X

PSMN1R4-40YLD/1X

MOSFET

Nexperia USA Inc.

 9,461 0.00
RFQ
PSMN1R4-40YLD/1X

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
BUK9Y3R0-40E/DMANX

BUK9Y3R0-40E/DMANX

MOSFET

Nexperia USA Inc.

 2,415 0.00
RFQ
BUK9Y3R0-40E/DMANX

Datasheet

 		- - Bulk Obsolete - - - - - - - - - - - - - - - - -
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