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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN3R0-30YLD/1X

Name: PSMN3R0-30YLD/1X
Brand: Nexperia USA Inc.
SKU: PSMN3R0-30YLD/1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN3R0-30YLD/1X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN3R0-30YLD/1X.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:3,140

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Product details

Overview

PSMN3R0-30YLD from Nexperia is an N-channel 30 V, 3.0 mΩ logic-level MOSFET in LFPAK56 (SOT669) package, optimized for 4.5 V gate drive and high-frequency synchronous rectification. It delivers R_DS(on) = 2.57 mΩ @ V_GS = 10 V, T_j = 25 °C; Q_G(tot) = 14.5 nC @ V_GS = 4.5 V; and soft-recovery diode performance (s-factor > 1.07), enabling high-efficiency DC-DC conversion in telecom VRMs and POL modules.

For engineers reviewing the PSMN3R0-30YLD datasheet, PSMN3R0-30YLD pinout, PSMN3R0-30YLD application, or PSMN3R0-30YLD equivalent, key selection criteria include its 3.0 mΩ R_DS(on) at 4.5 V drive, <1 µA I_DSS leakage at 25 °C, LFPAK56 clip-bonded construction qualified to 175 °C, and SchottkyPlus diode behavior without elevated reverse leakage.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with SchottkyPlus technology-integrating a low-leakage, soft-recovery body diode that mimics Schottky performance while maintaining <1 µA I_DSS at 25 °C. Its gate charge profile (Q_GD = 4.5 nC typ., Q_G(tot) = 14.5 nC typ. @ 4.5 V) enables fast, low-loss switching at frequencies up to several MHz.

The LFPAK56 package uses clip bonding and solder die attach-eliminating wire bonds and adhesive-to achieve R_th(j-mb) = 1.46 K/W and support continuous I_D = 100 A at T_mb = 25 °C. Mounting base connection to drain provides low-inductance power path and thermal path integrity for high-current POL and VRM designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 24 V input rail systems with margin for transient spikes
R_DS(on)	2.57 mΩ @ V_GS = 10 V, T_j = 25 °C - enables <10 W conduction loss at 60 A in 12 V POL stage
Q_G(tot)	14.5 nC @ V_GS = 4.5 V - minimizes gate drive power and enables efficient operation with standard 5 V controllers
s-factor	1.07 typ. - ensures soft reverse recovery, reducing EMI and voltage overshoot in synchronous rectifiers
R_th(j-mb)	1.46 K/W - allows direct thermal coupling to heatsink or PCB copper, critical for high-power density server DC-DC
I_D	100 A continuous @ T_mb = 25 °C - rated by package thermal limit, not silicon, supporting high-current secondary-side rectification
V_GS(th)	1.7 V typ. - ensures full enhancement with 3.3 V or 4.5 V logic-level gate drivers

Pinout & Package

LFPAK56 (SOT669) is a clip-bonded, wave-solderable surface-mount package with exposed mounting base connected to drain. It eliminates wire bonds and adhesive, delivering high reliability and low parasitic inductance for high-frequency power stages.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce current density and package inductance; enable low-resistance return path for high di/dt
4	Gate (G)	Single gate input with low RG (0.57 Ω typ.) for stable, fast turn-on/turn-off control
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain; serves as primary heat sink interface and high-current power terminal

Key Features

Feature	Design Value
NextPowerS3 SchottkyPlus diode	Soft-recovery s-factor > 1.07 and V_SD = 0.82 V @ I_S = 25 A, with <1 µA leakage - reduces EMI and improves efficiency vs. standard MOSFETs
Ultra-low Q_G, Q_GD, Q_OSS	Q_GD = 4.5 nC typ., Q_OSS = 21.8 nC - lowers switching losses and dv/dt-induced shoot-through risk in hard-switched topologies
Optimized for 4.5 V gate drive	R_DS(on) = 3.2 mΩ @ V_GS = 4.5 V, T_j = 25 °C - enables use with standard 5 V PWM controllers without level-shifting
Clip-bonded LFPAK56 package	R_th(j-mb) = 1.46 K/W and 175 °C qualification - supports high ambient temperature operation in dense server power supplies
Wave-solderable with exposed leads	Visual solder inspection enabled on all four leads - improves manufacturing yield and field reliability in high-volume telecom assembly

Applications

Server On-Board DC-DC

Telecom Secondary-Side SR

Use Scenario: Point-of-load regulation for ASICs and GPUs in 1U rack servers with strict thermal and footprint constraints.

IC Role / Device Role / Timing Role: Primary synchronous rectifier in multiphase buck converters operating at 500 kHz–1 MHz.

Use Value: 2.57 mΩ R_DS(on) and 1.46 K/W thermal resistance enable >95% efficiency at 60 A while maintaining T_j < 125 °C under airflow-limited conditions.

Use Scenario: Secondary-side synchronous rectification in isolated 48 V–12 V telecom DC-DC modules.

IC Role / Device Role / Timing Role: Low-voltage-side switch replacing Schottky diodes in forward or LLC resonant converters.

Use Value: SchottkyPlus diode behavior (s-factor = 1.07, V_SD = 0.82 V) cuts reverse recovery loss by >40% versus standard MOSFETs, reducing output ripple and EMI filter size.

VRM for CPU/V-Core

Brushless Motor Control

Use Scenario: High-current voltage regulator module supplying modern CPUs with dynamic load steps up to 300 A/µs.

IC Role / Device Role / Timing Role: Bottom-FET in dual-phase interleaved buck converter with 300 kHz–1 MHz switching.

Use Value: Ultra-low Q_G (14.5 nC @ 4.5 V) and fast tr/tf (<25 ns) ensure precise duty-cycle control and minimal dead-time loss during rapid load transients.

Use Scenario: Half-bridge leg in compact 24 V BLDC motor drives for industrial fans and pumps.

IC Role / Device Role / Timing Role: High-side or low-side switching element in 20–100 kHz PWM-driven inverter stage.

Use Value: 100 A continuous rating and 512 A pulsed capability support peak torque delivery; LFPAK56 mechanical robustness withstands vibration and thermal cycling in motor environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency, logic-level N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PSMN2R8-30YLC	R_DS(on) = 2.8 mΩ @ 4.5 V (vs. 3.2 mΩ); Q_G(tot) = 12.5 nC @ 4.5 V (lower); same LFPAK56 package	Slightly lower conduction loss at light loads but higher gate charge sensitivity to V_GS variation	Prefer when gate drive is stable ≥4.5 V and lowest possible Q_G is prioritized over absolute R_DS(on) minimum
IRLHS6342TRPBF	R_DS(on) = 3.4 mΩ @ 4.5 V; Q_G(tot) = 18.5 nC @ 4.5 V; PowerPAIR 3x3 package (higher R_th(j-a))	Higher thermal resistance (R_th(j-mb) not specified; relies on PCB conduction) limits high-current continuous use	Acceptable for lower-current POL or motor control where board space is constrained but thermal headroom is ample

Compared with PSMN2R8-30YLC, PSMN3R0-30YLD trades 0.3 mΩ higher R_DS(on) at 4.5 V for superior soft-recovery (s-factor 1.07 vs. unspecified) and tighter leakage control (<1 µA vs. 2.5 µA). Against IRLHS6342TRPBF, it offers 22% lower Q_G, 15% lower R_DS(on), and proven 175 °C reliability-critical for telecom and server deployments.

Availability

PSMN3R0-30YLD is available at Aetrix Electronics and suitable for server DC-DC, telecom synchronous rectification, and VRM applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for high-volume production.

Supply support for PSMN3R0-30YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-performance, reliable discrete and logic devices, with leadership in automotive-qualified and industrial-grade power MOSFETs.

PSMN3R0-30YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter, telecom, and industrial applications where low R_DS(on), fast switching, and robust thermal performance are essential.

FAQ

What is the maximum continuous drain current for PSMN3R0-30YLD at 100 °C mounting base temperature?

The datasheet specifies I_D = 90 A continuous at T_mb = 100 °C and V_GS = 10 V (Table 5, Limiting Values). This reflects thermal derating due to reduced heat dissipation at elevated mounting temperatures, not silicon current limit-actual capability remains governed by package thermal resistance (R_th(j-mb) = 1.46 K/W) and system cooling.

Does PSMN3R0-30YLD have avalanche energy rating, and what is its value?

Yes, it is 100% tested for non-repetitive drain-source avalanche energy: E_DS(AL)S = 227.5 mJ at T_j(init) = 25 °C, I_D = 25 A, V_sup ≤ 30 V, and R_GS = 50 Ω (Table 5). This rating supports robustness against inductive switching transients in motor control and DC-DC applications without external snubbers.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode in practical design?

SchottkyPlus delivers soft reverse recovery (s-factor = 1.07) and low forward voltage (V_SD = 0.82 V @ 25 A) like a Schottky diode, but with <1 µA leakage at 25 °C-unlike true Schottkys which typically exceed 100 µA. This eliminates trade-off between low V_F and high leakage, simplifying EMI filtering and thermal design in synchronous rectifiers.

Is PSMN3R0-30YLD suitable for automotive applications?

No. The datasheet explicitly states this device is "non-automotive qualified" (Section 12.3). It is not tested or guaranteed to meet AEC-Q101 requirements, nor qualified for 15-year lifetime under automotive temperature and humidity profiles. Use only in industrial, telecom, or computing applications per its specified 175 °C junction rating.

PSMN3R0-30YLD/1X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN3R0-30YLD/1X FAQ

1.How can I place an order for PSMN3R0-30YLD/1X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN3R0-30YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN3R0-30YLD/1X reliable?

The price and inventory of PSMN3R0-30YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN3R0-30YLD/1X is usually 5 days.

3.What payment methods are accepted for PSMN3R0-30YLD/1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN3R0-30YLD/1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN3R0-30YLD/1X?

PSMN3R0-30YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN3R0-30YLD/1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN3R0-30YLD/1X?

For technical support, including PSMN3R0-30YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN3R0-30YLD/1X requirements.

6.How does Aetrix verify that PSMN3R0-30YLD/1X is sourced from the original manufacturer or authorized distributors?

All PSMN3R0-30YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN3R0-30YLD/1X meets industry standards.

7.What is the process for return or replacement of PSMN3R0-30YLD/1X?

All PSMN3R0-30YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN3R0-30YLD/1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN3R0-30YLD/1X part is unused and in its original packaging.

Return procedure for PSMN3R0-30YLD/1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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