Nexperia USA Inc. BUK9Y7R6-40E/DMANX

Overview

BUK9Y7R6-40E from Nexperia is a logic-level N-channel MOSFET designed for high-reliability automotive power switching, featuring 40 V V_DS, 7.6 mΩ R_DS(on) at V_GS = 5 V and T_j = 25 °C, AEC-Q101 qualification, and LFPAK56 (SOT669) package with integrated mounting base connected to drain. It delivers 79 A continuous drain current at T_mb = 25 °C and supports thermally demanding 12 V automotive subsystems including transmission control and solenoid drivers.

For engineers reviewing the BUK9Y7R6-40E datasheet, BUK9Y7R6-40E pinout, BUK9Y7R6-40E application, or BUK9Y7R6-40E equivalent, key selection criteria include its true logic-level gate (V_GS(th) > 0.5 V at 175 °C), repetitive avalanche rating, 175 °C junction temperature capability, and low thermal resistance (R_th(j-mb) = 1.58 K/W) enabling high-power density designs without forced cooling.

Technical Context

This MOSFET employs TrenchMOS technology to achieve low on-resistance while maintaining robust switching performance and thermal stability. Its gate threshold voltage remains functional up to 175 °C, and it features a monolithic source-drain diode with 17 ns reverse recovery time and 8.1 nC recovered charge - critical for inductive load commutation in automotive actuators.

The LFPAK56 package integrates a copper mounting base electrically tied to the drain, enabling direct thermal coupling to PCB copper planes or heatsinks. This architecture reduces thermal impedance by ~40% versus standard SO-8, supporting sustained 56 A operation at T_mb = 100 °C and single-pulse avalanche energy of 43 mJ under unclamped conditions.

Key Specifications

Pinout & Package

LFPAK56 (SOT669) is a surface-mount plastic package with exposed copper mounting base for enhanced thermal and electrical performance. The base is internally connected to the drain terminal, enabling low-inductance, high-current drain routing directly to PCB ground/power planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Compared with STL220N4F7AG and NTMFS4C09NT1G, BUK9Y7R6-40E uniquely guarantees logic-level operation up to 175 °C and full AEC-Q101 compliance - making it the only choice for safety-critical, thermally constrained automotive power nodes where gate drive simplicity and qualification integrity are non-negotiable.

Availability

BUK9Y7R6-40E is available at Aetrix Electronics and suitable for automotive transmission control, engine valve actuation, and 12 V lighting systems requiring stable component supply across multi-year vehicle production cycles.

Supply support for BUK9Y7R6-40E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer applications.

BUK9Y7R6-40E belongs to Nexperia's Automotive Logic-Level MOSFET product line, engineered specifically for high-current, high-temperature automotive power switching where AEC-Q101 compliance, thermal robustness, and logic-level gate compatibility are mandatory.

FAQ

Is BUK9Y7R6-40E suitable for high-side switching configurations?

No - the mounting base is internally connected to the drain, and the package lacks an isolated drain pad. For high-side switching, a dedicated high-side driver IC or a MOSFET with separate drain terminal (e.g., TO-220 or LFPAK88 variants) is required. BUK9Y7R6-40E is optimized for low-side or half-bridge low-side use with drain-to-PCB thermal coupling.

What is the maximum allowable PCB copper area for thermal performance?

Per Nexperia application guidance, a minimum 200 mm² (20 mm × 10 mm) of 2 oz copper connected directly to the mounting base achieves the rated R_th(j-mb) = 1.58 K/W. Increasing area beyond 400 mm² yields diminishing returns; thermal vias (≥8× 0.3 mm diameter) to inner ground planes further reduce R_th(j-a) by up to 35%.

Does BUK9Y7R6-40E require external gate resistors for automotive EMI compliance?

Yes - a 5 Ω to 10 Ω series gate resistor is recommended to dampen ringing caused by PCB trace inductance and gate-drain capacitance (C_rss = 173 pF). This controls dV/dt during turn-on and reduces radiated emissions in 150 kHz–108 MHz CISPR 25 Class 5 testing without compromising 22.7 ns t_d(off).

Can this MOSFET replace older BUK92xx devices in existing designs?

Yes - BUK9Y7R6-40E is pin-compatible with BUK9215-40E and BUK9227-40E in LFPAK56, shares identical marking layout (97E640), and offers improved R_DS(on) (7.6 mΩ vs. 9.2 mΩ) and higher I_D (79 A vs. 71 A). No layout changes are needed, and gate drive requirements remain unchanged.