Toshiba Semiconductor and Storage TK430A60F,S4X(S

Overview

TK430A60F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC converters and industrial SMPS. It delivers 600 V V_DSS, 13 A continuous drain current, and a typ. R_DS(ON) of 0.36 Ω at V_GS = 10 V, enabling efficient operation in flyback and LLC resonant topologies.

For engineers reviewing the TK430A60F datasheet, TK430A60F pinout, TK430A60F application, or TK430A60F equivalent, key selection criteria include avalanche energy rating (460 mJ), gate threshold voltage range (2–4 V), thermal resistance (R_th(ch-c) = 2.77 °C/W), and TO-220SIS package compatibility with heatsink mounting.

Technical Context

This MOSFET employs a planar silicon process optimized for ruggedness in hard-switched applications. Its enhancement-mode operation ensures reliable turn-on at ≥2 V gate drive, while the integrated body diode supports freewheeling in discontinuous conduction mode (DCM) flyback designs. The device is rated for single-pulse avalanche energy up to 460 mJ under defined test conditions (V_DD = 90 V, L = 4.77 mH).

Thermal design is constrained by a maximum channel temperature of 150 °C and a low channel-to-case thermal resistance of 2.77 °C/W - critical for sustained 13 A DC operation with forced-air or heatsink cooling. Gate charge parameters (Q_g = 48 nC, Q_gd = 21 nC) indicate moderate switching losses suitable for 65–100 kHz SMPS designs.

Key Specifications

Pinout & Package

TK430A60F is housed in a TO-220SIS (JEITA SC-67 / Toshiba 2-10U1S) package with isolated drain tab, enabling direct heatsink mounting without insulating hardware. The package weighs 1.7 g and features screw-mount capability (0.6 N·m torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP13NK60ZFP and IPP60R041P7XKSA1, the TK430A60F offers a balanced trade-off: drain-isolated TO-220SIS simplifies thermal design, its 460 mJ avalanche rating exceeds most 600 V competitors, and its 2–4 V V_th ensures robust gate control without requiring gate protection circuitry.

Availability

TK430A60F is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, LED driver systems, and offline switch-mode adapters requiring stable component supply and long-term manufacturability.

Supply support for TK430A60F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in silicon power MOSFET technology.

The TK430A60F belongs to Toshiba's π-MOSⅣ family - engineered specifically for high-reliability, high-voltage switching in industrial and commercial power conversion applications where ruggedness and thermal performance are critical.

FAQ

What is the maximum continuous drain current rating for TK430A60F?

The TK430A60F has a maximum continuous drain current (I_D) of 13 A at T_c = 25 °C. This rating assumes proper heatsinking and is derated linearly above 25 °C case temperature, reaching zero at 150 °C channel temperature. For sustained operation, thermal design must maintain T_ch ≤ 150 °C using the specified R_th(ch-c) = 2.77 °C/W.

Does TK430A60F have an isolated drain package?

Yes, the TK430A60F uses the TO-220SIS package (JEITA SC-67), which features an electrically isolated drain tab. This allows direct mounting to a grounded heatsink without requiring insulating pads or hardware, simplifying thermal design and improving mechanical reliability in high-vibration environments.

What is the gate threshold voltage range for TK430A60F?

The TK430A60F has a gate threshold voltage (V_th) range of 2–4 V, measured at V_DS = 10 V and I_D = 1.75 mA. This enhancement-mode specification ensures reliable turn-on with standard 5 V or 12 V PWM controllers and prevents accidental conduction during low-noise startup or brownout conditions.

Can TK430A60F be used in avalanche-mode operation?

Yes, the TK430A60F is rated for single-pulse avalanche energy (E_AS) of 460 mJ under defined test conditions (V_DD = 90 V, L = 4.77 mH, I_AS = 13 A). While not intended for repetitive avalanche, this rating provides design margin in flyback and forward converters during transient overloads or transformer leakage spikes.

What is the typical input capacitance (C_iss) of TK430A60F?

The typical input capacitance (C_iss) of TK430A60F is 1940 pF, measured at V_DS = 300 V and V_GS = 0 V, f = 100 kHz. This value directly impacts gate drive requirements and Miller-effect behavior during high-speed switching, particularly in hard-switched topologies operating above 65 kHz.