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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN0R7-25YLD/1X

Name: PSMN0R7-25YLD/1X
Brand: Nexperia USA Inc.
SKU: PSMN0R7-25YLD/1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN0R7-25YLD/1X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN0R7-25YLD/1X.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:2,768

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Product details

Overview

PSMN0R7-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT1023) package, rated for 25 V V_DS, 0.72 mΩ R_DS(on) at V_GS = 10 V and 25 A, 300 A continuous drain current capability, and optimized for 4.5 V gate drive. It serves as a high-current synchronous rectifier or main switch in compact, high-frequency DC/DC converters for server and telecom infrastructure.

For engineers reviewing the PSMN0R7-25YLD datasheet, PSMN0R7-25YLD pinout, PSMN0R7-25YLD application, or PSMN0R7-25YLD equivalent, key selection criteria include its ultra-low Q_G/Q_GD, SchottkyPlus body diode performance (<1 µA leakage), 100% avalanche-tested ruggedness (I_AS = 190 A), and clip-bonded LFPAK56 thermal reliability up to 150 °C junction temperature.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 technology with "SchottkyPlus" body diode integration-delivering soft-recovery reverse recovery (t_rr = 57.7 ns, Q_r = 83.2 nC) and low spiking without elevated leakage. Its gate threshold voltage (V_GS(th) = 1.2–2.2 V) and plateau voltage (~2.6 V) ensure robust turn-on under 4.5 V logic-level drive.

The LFPAK56 package features a copper-clip bonded die, solder-connected mounting base (drain), and three parallel source terminals-minimizing parasitic inductance and resistance while enabling 158 W total power dissipation at T_mb = 25 °C and R_th(j-mb) = 0.59 K/W.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Maximum blocking voltage compatible with 12 V and 24 V input rails in POL and VRM designs.
R_DS(on)	0.72 mΩ @ V_GS = 10 V, T_j = 25 °C - Enables <10 mW conduction loss at 100 A, critical for high-efficiency secondary-side rectification.
I_D (cont)	300 A - Demonstrated continuous current capacity; limited in practice by PCB thermal design and mounting base temperature.
Q_GD	11.9 nC @ V_GS = 4.5 V - Low gate-drain charge minimizes switching losses and improves EMI behavior at >500 kHz frequencies.
t_rr / Q_r	57.7 ns / 83.2 nC - Fast, soft-recovery body diode reduces voltage overshoot and snubbing requirements in synchronous buck topologies.
R_th(j-mb)	0.59 K/W - Low junction-to-mounting-base thermal resistance enables direct heatsinking and supports high-power density layouts.
V_GS(th)	1.66 V (typ) - Ensures full enhancement with standard 3.3 V or 5 V logic drivers, eliminating need for gate boosters.

Pinout & Package

LFPAK56 (SOT1023) is a leadless, clip-bonded surface-mount package with exposed copper mounting base (drain), three paralleled source terminals, and single gate terminal-designed for wave soldering, visual solder inspection, and high-reliability operation at 150 °C.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three low-inductance source connections reduce common-source inductance and improve switching stability in high-di/dt applications.
4	Gate (G)	Single gate input with low RG (1.35 Ω typ); optimized for 4.5 V logic-level drive and fast turn-on/turn-off control.
Mounting Base	Drain (D)	Exposed copper drain pad provides primary thermal path and electrical connection; requires PCB copper pour for heat dissipation.

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft-recovery t_rr = 57.7 ns and Q_r = 83.2 nC with leakage <1 µA at 25 °C-enables efficient synchronous rectification without external diode or complex snubbing.
100% avalanche tested	I_AS = 190 A non-repetitive rating-ensures robustness against inductive switching transients in motor drives and OR-ing circuits.
Ultra-low gate charge	Q_G(tot) = 50.9 nC @ 4.5 V-reduces driver power loss and enables use of low-cost, low-current gate drivers in high-frequency (>1 MHz) POL modules.
Clip-bonded construction	No wire bonds or die attach glue-eliminates bond-wire fatigue failure modes and qualifies for 150 °C continuous operation per AEC-Q200 stress test alignment.
Wave-solderable leads	Exposed source/gate leads allow optical solder-joint inspection-critical for high-reliability telecom and server manufacturing with IPC-A-610 Class 3 compliance.

Applications

Server DC/DC Conversion

Telecom Secondary Rectification

Use Scenario: High-density 48 V to 12 V intermediate bus converter in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with synchronous rectification on secondary side.

Use Value: 0.72 mΩ R_DS(on) and 11.9 nC Q_GD reduce conduction + switching losses below 1.2 W at 200 A output, enabling >95% efficiency at full load.

Use Scenario: Secondary-side synchronous rectifier in 48 V to 5 V isolated DC/DC module for 5G baseband units.

IC Role / Device Role / Timing Role: Low-V_DS N-channel MOSFET replacing Schottky diode in forward topology, driven by transformer-coupled gate signal.

Use Value: SchottkyPlus diode characteristics eliminate reverse recovery loss and reduce voltage overshoot by >30% vs. standard MOSFETs, lowering EMI filter size.

VRM / POL Modules

Power OR-ing

Use Scenario: Point-of-load regulator delivering 50–100 A to FPGA or ASIC in AI accelerator cards.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power stage switch in multiphase buck converter with 1 MHz+ switching frequency.

Use Value: 300 A current rating and 0.59 K/W R_th(j-mb) support compact, multi-phase layouts with minimal thermal derating-even at 85 °C ambient.

Use Scenario: Redundant 12 V power supply OR-ing in industrial control PLC backplanes.

IC Role / Device Role / Timing Role: N-channel MOSFET used in ideal diode configuration with external gate controller to replace discrete diodes.

Use Value: Ultra-low V_SD (0.77 V typ) and fast turn-off (t_f = 38.2 ns) minimize forward drop and reverse current during switchover, reducing power loss by >60% vs. Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC014N04LS6	40 V V_DS, 1.4 mΩ R_DS(on) @ 10 V, PG-TSDSON-8 package (smaller footprint, higher R_DS(on))	Better suited for 36 V input systems; less optimal for 25 V max-rail telecom apps due to higher conduction loss.	Select when higher V_DS margin is required and board space is constrained-tradeoff is ~95% higher R_DS(on) at same current.
Vishay SiR626DP	30 V V_DS, 0.83 mΩ R_DS(on) @ 10 V, PowerPAK SO-8L package; no integrated Schottky-like diode	Lacks soft-recovery body diode-requires external snubber or dead-time tuning in synchronous rectification.	Prefer when cost sensitivity outweighs EMI and layout complexity concerns; verify t_rr impact on system efficiency.

Compared with BSC014N04LS6 and SiR626DP, PSMN0R7-25YLD delivers superior 25 V-specific efficiency via lower R_DS(on), SchottkyPlus diode behavior, and LFPAK56 thermal performance-making it optimal for space-constrained, high-frequency telecom and server POL designs where 25 V rail compliance is mandatory.

Availability

PSMN0R7-25YLD is available at Aetrix Electronics and suitable for server DC/DC conversion, telecom secondary rectification, and VRM/Pol modules requiring stable component supply, high-volume consistency, and long-term lifecycle assurance.

Supply support for PSMN0R7-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies-including high-performance logic, discrete, and MOSFET solutions for automotive, industrial, and computing markets.

PSMN0R7-25YLD belongs to the NextPowerS3 portfolio, engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure-emphasizing low-loss switching, avalanche ruggedness, and thermally robust packaging.

FAQ

What is the maximum continuous drain current rating for PSMN0R7-25YLD?

The datasheet specifies 300 A continuous drain current under application-test conditions at T_mb = 25 °C. In real-world PCB layouts, practical current is limited by thermal design-derating begins above ~60 °C mounting base temperature, with 235 A supported at T_mb = 100 °C per Fig. 2. Peak pulsed current is 1482 A (tp ≤ 10 µs).

Does PSMN0R7-25YLD require a gate driver IC, or can it be driven directly from a microcontroller?

It can be driven directly from a 3.3 V or 5 V microcontroller GPIO when operated at moderate switching frequencies (<200 kHz) and low duty-cycle loads. For full 300 A capability and >500 kHz operation, a dedicated gate driver (e.g., TI UCC27531) is recommended to ensure fast turn-on/turn-off and minimize Q_G-related losses-especially given its 50.9 nC Q_G(tot) at 4.5 V.

How does the "SchottkyPlus" body diode differ from a standard MOSFET body diode?

SchottkyPlus delivers Schottky-like soft reverse recovery (t_rr = 57.7 ns, Q_r = 83.2 nC) and low forward voltage (V_SD = 0.77 V @ 25 A), but with leakage <1 µA at 25 °C-unlike true Schottky diodes that exhibit >100× higher leakage. This enables synchronous rectification without compromising standby power or thermal stability.

Is PSMN0R7-25YLD qualified for automotive applications?

No. The datasheet explicitly states this device is not automotive-qualified. It is not tested to AEC-Q101 stress requirements, lacks automotive-grade process controls, and carries no automotive qualification markings. Use only in industrial, computing, or telecom applications per its documented specifications and reliability testing (e.g., 150 °C operation, 100% avalanche test).

PSMN0R7-25YLD/1X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN0R7-25YLD/1X FAQ

1.How can I place an order for PSMN0R7-25YLD/1X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN0R7-25YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN0R7-25YLD/1X reliable?

The price and inventory of PSMN0R7-25YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN0R7-25YLD/1X is usually 5 days.

3.What payment methods are accepted for PSMN0R7-25YLD/1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN0R7-25YLD/1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN0R7-25YLD/1X?

PSMN0R7-25YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN0R7-25YLD/1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN0R7-25YLD/1X?

For technical support, including PSMN0R7-25YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN0R7-25YLD/1X requirements.

6.How does Aetrix verify that PSMN0R7-25YLD/1X is sourced from the original manufacturer or authorized distributors?

All PSMN0R7-25YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN0R7-25YLD/1X meets industry standards.

7.What is the process for return or replacement of PSMN0R7-25YLD/1X?

All PSMN0R7-25YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN0R7-25YLD/1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN0R7-25YLD/1X part is unused and in its original packaging.

Return procedure for PSMN0R7-25YLD/1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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