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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Toshiba Semiconductor and Storage TK370A60F,S4X(S

Name: TK370A60F,S4X(S
Brand: Toshiba Semiconductor and Storage
SKU: TK370A60F,S4X(S
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: TK370A60F,S4X(S

Manufacturer:: Toshiba Semiconductor and Storage

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: TK370A60F,S4X(S.pdf

Description:: MOSFET N-CH

Quantity:: RFQ Add To RFQ list

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Product details

Overview

TK370A60F from Toshiba Electronic Devices & Storage Corporation is a silicon N-channel power MOSFET in the π-MOSⅣ family, designed for high-voltage switching in offline AC-DC power supplies. It features 600 V drain-source breakdown voltage, 0.3 Ω typical R_DS(ON) at V_GS = 10 V and I_D = 7.5 A, 15 A DC drain current rating, and TO-220SIS (SC-67) package with isolated heatsink mounting.

For engineers reviewing the TK370A60F datasheet, TK370A60F pinout, TK370A60F application, or TK370A60F equivalent, this device is selected for primary-side switching in 100–300 W flyback and LLC resonant converters where high avalanche energy tolerance (574 mJ), low gate charge (55 nC), and MOSFET dv/dt ruggedness (15 V/ns minimum) are critical to system reliability and EMI control.

Technical Context

This MOSFET employs a planar vertical structure optimized for fast switching and robust unclamped inductive switching (UIS) performance. Its enhancement-mode operation (V_th = 2–4 V) enables direct drive from standard PWM controllers without level-shifting, while its integrated body diode supports synchronous rectification and freewheeling paths in hard-switched topologies.

The TO-220SIS package provides electrical isolation between the drain-connected tab and PCB mount surface, allowing direct heatsinking without insulating pads. Thermal resistance from channel-to-case is 2.77 °C/W, supporting high-power density designs when mounted on adequately sized heatsinks.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands full mains rectified voltage in universal-input (85–265 VAC) SMPS primary side.
R_DS(ON) (typ.)	0.3 Ω @ V_GS = 10 V, I_D = 7.5 A - Enables <1.7 W conduction loss at 7.5 A, reducing thermal load in continuous conduction mode.
E_AS	574 mJ - Sustains single-pulse inductive energy during overcurrent or startup without failure, improving surge immunity.
Q_g	55 nC - Low total gate charge reduces driver power requirement and switching transition time, lowering switching losses.
dv/dt ruggedness	≥15 V/ns - Resists false turn-on due to high dV/dt noise in high-frequency, high-voltage switching nodes.
C_iss	2200 pF @ V_DS = 300 V - Input capacitance impacts gate drive loop stability and zero-voltage switching (ZVS) timing in resonant converters.
T_ch max	150 °C - Maximum junction temperature defines safe operating area limits under transient thermal stress.

Pinout & Package

Package: TO-220SIS (JEITA SC-67, Toshiba 2-10U1S), 3-terminal through-hole package with electrically isolated metal tab (drain-connected). Weight: 1.7 g (typ.).

Pin/Terminal	Circuit Role	Design Meaning
1	Gate	Control terminal; requires ≤±30 V gate-source voltage; low input capacitance enables efficient driving with standard gate drivers.
2	Drain	High-voltage output terminal; connected to internal MOSFET drain and isolated metal tab; must be thermally coupled to heatsink.
3	Source	Reference node for gate drive and current sensing; tied to primary ground in flyback/LLC; carries full switched current.

Key Features

Feature	Design Value
Low R_DS(ON) with high V_DSS	0.3 Ω @ 600 V enables higher efficiency than comparable 600 V MOSFETs with >0.4 Ω R_DS(ON), reducing conduction loss by ≥25% at 7.5 A.
High UIS capability	574 mJ single-pulse avalanche energy allows reliable operation during output short-circuit or overload without external clamping.
Fast switching with low Q_g	55 nC total gate charge and 24 nC Q_gd support <150 ns turn-off time with 10 Ω gate resistor, minimizing switching loss at 100–300 kHz.
Body diode with controlled recovery	Reverse recovery time (t_rr) = 800 ns and Q_rr = 8 µC enable predictable freewheeling behavior and reduce diode-related switching loss in quasi-resonant topologies.
Isolated TO-220SIS package	Electrically isolated drain tab eliminates need for insulating thermal pads, simplifying mechanical design and improving thermal interface reliability.

Applications

Industrial AC-DC Adapters	Server PSU Primary Switch
Use Scenario: 200 W universal-input offline adapter for factory automation I/O modules requiring high reliability across wide ambient temperatures. IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback converter, operating at 65 kHz with peak drain current ≤12 A. Use Value: 600 V rating ensures margin against 400 V DC bus transients; 574 mJ E_AS prevents failure during line surges per IEC 61000-4-5.	Use Scenario: 300 W front-end AC-DC stage in 1U server power supply with active PFC + LLC topology. IC Role / Device Role / Timing Role: LLC resonant half-bridge switch operating in ZVS region, conducting 15 A DC with 100 kHz fundamental frequency. Use Value: 0.3 Ω R_DS(ON) limits conduction loss to <1.7 W at full load; isolated TO-220SIS enables direct heatsink mounting without dielectric film degradation risk.
LED Driver Power Stage	UPS Inverter Bridge
Use Scenario: Constant-current 150 W LED driver for outdoor street lighting with surge immunity to ±6 kV line-to-ground per IEC 61000-4-5. IC Role / Device Role / Timing Role: Primary switch in asymmetric half-bridge forward converter, handling 10 A peak drain current with 300 ns turn-off time. Use Value: 15 V/ns dv/dt ruggedness prevents spurious turn-on during lightning-induced transients; 150 °C T_ch max supports operation in sealed enclosures up to 85 °C ambient.	Use Scenario: 500 VA online UPS inverter stage converting 360 V DC bus to 230 V AC output using full-bridge topology. IC Role / Device Role / Timing Role: High-side switch in 50 Hz–1 kHz PWM-controlled bridge, conducting 15 A RMS with bidirectional body diode conduction. Use Value: Body diode t_rr = 800 ns and Q_rr = 8 µC minimize reverse recovery loss and associated EMI; 62.5 °C/W R_th(ch-a) supports forced-air cooling without oversized heatsinks.

Industrial AC-DC Adapters

Server PSU Primary Switch

Use Scenario: 200 W universal-input offline adapter for factory automation I/O modules requiring high reliability across wide ambient temperatures.

IC Role / Device Role / Timing Role: Primary-side high-side switch in discontinuous conduction mode (DCM) flyback converter, operating at 65 kHz with peak drain current ≤12 A.

Use Value: 600 V rating ensures margin against 400 V DC bus transients; 574 mJ E_AS prevents failure during line surges per IEC 61000-4-5.

Use Scenario: 300 W front-end AC-DC stage in 1U server power supply with active PFC + LLC topology.

IC Role / Device Role / Timing Role: LLC resonant half-bridge switch operating in ZVS region, conducting 15 A DC with 100 kHz fundamental frequency.

Use Value: 0.3 Ω R_DS(ON) limits conduction loss to <1.7 W at full load; isolated TO-220SIS enables direct heatsink mounting without dielectric film degradation risk.

LED Driver Power Stage

UPS Inverter Bridge

Use Scenario: Constant-current 150 W LED driver for outdoor street lighting with surge immunity to ±6 kV line-to-ground per IEC 61000-4-5.

IC Role / Device Role / Timing Role: Primary switch in asymmetric half-bridge forward converter, handling 10 A peak drain current with 300 ns turn-off time.

Use Value: 15 V/ns dv/dt ruggedness prevents spurious turn-on during lightning-induced transients; 150 °C T_ch max supports operation in sealed enclosures up to 85 °C ambient.

Use Scenario: 500 VA online UPS inverter stage converting 360 V DC bus to 230 V AC output using full-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in 50 Hz–1 kHz PWM-controlled bridge, conducting 15 A RMS with bidirectional body diode conduction.

Use Value: Body diode t_rr = 800 ns and Q_rr = 8 µC minimize reverse recovery loss and associated EMI; 62.5 °C/W R_th(ch-a) supports forced-air cooling without oversized heatsinks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(ON) = 0.32 Ω (typ.), E_AS = 490 mJ, Q_g = 52 nC, same TO-220FP package but non-isolated tab.	Lacks drain-isolation; requires insulating pad for heatsink mounting, increasing thermal resistance by ~1.2 °C/W.	Prefer TK370A60F where mechanical simplicity and thermal performance outweigh minor R_DS(ON) difference.
FQP15N60C	R_DS(ON) = 0.36 Ω (typ.), E_AS = 420 mJ, Q_g = 65 nC, TO-220 package with non-isolated tab.	Higher gate charge increases driver loss; lower avalanche rating reduces surge margin in harsh environments.	TK370A60F delivers superior UIS robustness and lower switching loss-critical for industrial-grade 24/7 operation.

Compared with STP15NM60ND and FQP15N60C, the TK370A60F offers higher avalanche energy (574 mJ vs. ≤490 mJ), electrically isolated packaging for simplified thermal design, and lower Q_gd/Q_g ratio enabling faster, more controllable turn-off in hard-switched applications.

Availability

TK370A60F is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and LED driver power stages requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for TK370A60F includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation is a Japanese semiconductor manufacturer specializing in power devices, logic ICs, and storage solutions, with decades of expertise in high-reliability discrete components.

The TK370A60F belongs to Toshiba's π-MOSⅣ high-voltage power MOSFET product line, engineered specifically for efficiency-critical, high-surge industrial and computing power supplies operating up to 600 V.

FAQ

What is the maximum continuous drain current rating for the TK370A60F?

The TK370A60F has a DC drain current rating of 15 A at T_c = 25 °C. This rating assumes proper heatsinking to maintain channel temperature ≤150 °C; derating is required above 25 °C case temperature per the R_th(ch-c) = 2.77 °C/W thermal resistance specification. At T_c = 100 °C, the usable DC current drops to approximately 8.5 A.

Does the TK370A60F have an electrically isolated package?

Yes, the TK370A60F uses the TO-220SIS package (JEITA SC-67), where the metal tab is internally connected to the drain but electrically isolated from the PCB mounting surface. This eliminates the need for insulating thermal pads or washers, reducing thermal interface resistance and improving long-term reliability in high-power applications.

What is the typical gate threshold voltage range for the TK370A60F?

The TK370A60F has an enhancement-mode gate threshold voltage (V_th) ranging from 2 V to 4 V, measured at V_DS = 10 V and I_D = 2.04 mA. This range ensures compatibility with standard 5 V and 12 V PWM controllers while maintaining sufficient noise immunity against spurious turn-on in noisy power environments.

Can the TK370A60F replace older 600 V MOSFETs like the 2SK370 series?

No-the TK370A60F is not a drop-in replacement for the obsolete 2SK370 series. While both are 600 V N-channel MOSFETs, the TK370A60F has significantly lower R_DS(ON) (0.3 Ω vs. ≥1.2 Ω), different gate charge profile, and modern π-MOSⅣ process characteristics. Circuit re-optimization-including gate drive strength and snubber design-is required when upgrading to TK370A60F.

Is the TK370A60F suitable for use in automotive power systems?

The TK370A60F is not qualified for automotive applications per AEC-Q101. It is specified for industrial and computing power supplies only. Its absolute maximum ratings and reliability testing align with industrial standards-not automotive temperature, vibration, or lifetime requirements. For automotive 600 V switching, consider Toshiba's AEC-Q101-qualified TKxxx series or equivalent qualified alternatives.

TK370A60F,S4X(S Specifications

Product attributes: Attribute value

Manufacturer:: Toshiba Semiconductor and Storage

Series:: U-MOSIX

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 370mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2.04mA

Gate Charge (Qg) (Max) @ Vgs:: 55 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 2200 pF @ 300 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: 150°C

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220SIS

TK370A60F,S4X(S FAQ

1.How can I place an order for TK370A60F,S4X(S through Aetrix?

Please submit a Request for Quotation (RFQ) for TK370A60F,S4X(S on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for TK370A60F,S4X(S reliable?

The price and inventory of TK370A60F,S4X(S are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for TK370A60F,S4X(S is usually 5 days.

3.What payment methods are accepted for TK370A60F,S4X(S?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for TK370A60F,S4X(S transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for TK370A60F,S4X(S?

TK370A60F,S4X(S orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your TK370A60F,S4X(S order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for TK370A60F,S4X(S?

For technical support, including TK370A60F,S4X(S datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your TK370A60F,S4X(S requirements.

6.How does Aetrix verify that TK370A60F,S4X(S is sourced from the original manufacturer or authorized distributors?

All TK370A60F,S4X(S products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that TK370A60F,S4X(S meets industry standards.

7.What is the process for return or replacement of TK370A60F,S4X(S?

All TK370A60F,S4X(S units undergo pre-shipment inspection (PSI). If there is an issue with TK370A60F,S4X(S, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The TK370A60F,S4X(S part is unused and in its original packaging.

Return procedure for TK370A60F,S4X(S:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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