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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R0-25YLD/1X

Name: PSMN1R0-25YLD/1X
Brand: Nexperia USA Inc.
SKU: PSMN1R0-25YLD/1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R0-25YLD/1X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN1R0-25YLD/1X.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:3,631

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Product details

Overview

PSMN1R0-25YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 25 V V_DS, 1.0 mΩ R_DS(on) at V_GS = 10 V and 25 A, 240 A continuous drain current at T_mb = 25 °C, and optimized for high-frequency synchronous rectification in server DC/DC converters.

For engineers reviewing the PSMN1R0-25YLD datasheet, PSMN1R0-25YLD pinout, PSMN1R0-25YLD application, or PSMN1R0-25YLD equivalent, key selection criteria include its SchottkyPlus-enabled low EMI switching, 0.68 K/W R_th(j-mb), 8 nC Q_GD at 4.5 V drive, avalanche rating of 190 A, and wave-solderable exposed-mounting-base construction.

Technical Context

This MOSFET employs Nexperia's NextPowerS3 architecture with "SchottkyPlus" technology-delivering soft-recovery diode behavior (Q_r = 36.7 nC, t_rr = 36.9 ns, S = 0.9) and <1 µA I_DSS at 25 °C without high leakage trade-offs. Its gate threshold is 1.75 V typical with -5 mV/K temperature coefficient, enabling robust 4.5 V logic-level control.

The LFPAK56 package uses clip-bonded die attach and solder-connected leads-eliminating wire bonds and adhesive-to achieve 175 °C junction rating, 0.68 K/W thermal resistance to mounting base, and low parasitic inductance for clean turn-off (t_f = 24.5 ns with 5 Ω external gate resistor).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V maximum - supports 12 V and 24 V input rails in POL and VRM stages without derating
R_DS(on) @ 10 V	0.89 mΩ typical - enables <10 W conduction loss at 200 A in high-current secondary-side rectification
I_D cont. @ T_mb = 25 °C	240 A - validated in application testing; PCB thermal design governs real-world current capability
Q_GD	8 nC @ V_GS = 4.5 V - minimizes Miller-induced switching delay and improves hard-switching efficiency
E_AS	1762 mJ - 100% tested single-pulse avalanche ruggedness supports reliable operation under load dump or inductive turn-off stress
R_th(j-mb)	0.68 K/W - enables direct thermal coupling to heatsink or copper plane, critical for >100 W dissipation in compact servers
t_f	24.5 ns @ V_GS = 4.5 V, R_G(ext) = 5 Ω - fast, controlled fall time reduces switching losses and voltage overshoot

Pinout & Package

LFPAK56 (SOT669) is a 4-terminal, single-ended surface-mount package with clip-bonded die, solder-connected leads, and exposed mounting base tied to drain. It features wave-solderable leads and visual solder inspection capability via exposed terminations.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel source terminals reduce source inductance and improve current sharing in high-di/dt applications
4	Gate (G)	Single gate input with 1.14 Ω internal gate resistance - compatible with standard gate drivers without added series resistance
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically connected to drain; serves as primary thermal path and high-current drain connection

Key Features

Feature	Design Value
SchottkyPlus body diode	Soft reverse recovery (S = 0.9), Q_r = 36.7 nC, V_SD = 0.79 V - eliminates need for external Schottky in synchronous rectifiers while avoiding leakage penalty
Avalanche ruggedness	100% tested I_AS = 190 A - ensures reliability in unclamped inductive switching events common in OR-ing and motor control
Ultra-low Q_G & Q_GD	Q_G(tot) = 71.8 nC @ 10 V; Q_GD = 8 nC @ 4.5 V - enables efficient operation up to 1 MHz in high-density DC/DC converters
Thermal construction	Clip-bonded die + solder die attach - achieves 175 °C T_j rating and 0.68 K/W R_th(j-mb) without epoxy or wire bonds
Logic-level drive	V_GS(th) = 1.75 V typ, fully enhanced at 4.5 V - compatible with 3.3 V and 5 V microcontrollers and PWM controllers without level shifting

Applications

Server DC/DC Converter

Telecom Secondary-Side Rectifier

Use Scenario: High-current, high-efficiency buck converter delivering 12 V → 1 V/300 A to CPU/GPU in rack-mounted servers.

IC Role / Device Role / Timing Role: Primary synchronous rectifier switch on secondary side, operating at 500 kHz–1 MHz with 4.5 V gate drive from controller.

Use Value: 0.89 mΩ R_DS(on) and 24.5 ns fall time minimize conduction and switching losses; SchottkyPlus diode eliminates reverse recovery spikes that compromise EMI compliance.

Use Scenario: Isolated 48 V → 12 V intermediate bus converter in telecom power shelf with tight thermal constraints.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in active-clamp forward topology, driven by transformer-coupled gate signal.

Use Value: 0.68 K/W R_th(j-mb) enables direct mounting to chassis; 190 A avalanche rating withstands transient overloads during hot-swap events.

VRM / POL Module

Power OR-ing Circuit

Use Scenario: Compact point-of-load module supplying core voltage to ASICs and FPGAs in edge AI accelerators.

IC Role / Device Role / Timing Role: High-side switch in multiphase buck stage, operated with interleaved 300–600 kHz PWM and 4.5 V gate drive.

Use Value: Ultra-low Q_GD (8 nC) reduces shoot-through risk during dead-time transitions; low C_iss (5308 pF) eases gate driver sizing.

Use Scenario: Redundant 12 V power supply combining two sources using ideal diode control in industrial PLC backplane.

IC Role / Device Role / Timing Role: N-channel OR-ing switch configured with external gate driver to replace discrete diodes and reduce forward drop.

Use Value: V_SD = 0.79 V and soft recovery (t_rr = 36.9 ns) eliminate reverse recovery current surges during source switchover, preventing bus collapse.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon BSC010N04LS	40 V V_DS, 1.0 mΩ R_DS(on) @ 10 V, PG-TSDSON-8 package, higher Q_G (92 nC)	Wider voltage margin but higher gate charge increases driver loss at 1 MHz	Prefer when 40 V system margin is required and switching frequency ≤ 500 kHz
Vishay SiR626DP	30 V V_DS, 0.95 mΩ R_DS(on) @ 10 V, PowerPAK SO-8, no avalanche rating published	Larger R_th(j-a) (140 K/W vs 125 K/W) and untested avalanche performance	Consider only in non-avalanche-critical, lower-power POL designs with ample board cooling

Compared with BSC010N04LS and SiR626DP, PSMN1R0-25YLD delivers superior thermal performance (0.68 K/W vs ≥1.0 K/W), verified avalanche ruggedness, and lower Q_GD-making it optimal for high-current, high-frequency server and telecom rectification where reliability and EMI are critical.

Availability

PSMN1R0-25YLD is available at Aetrix Electronics and suitable for server DC/DC converters, telecom power modules, and industrial OR-ing circuits requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for PSMN1R0-25YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors-including MOSFETs, logic, and ESD protection-with manufacturing rooted in process discipline and automotive-grade quality systems.

The NextPowerS3 product line was engineered specifically for high-efficiency, high-frequency power conversion in datacenter and telecom infrastructure-prioritizing low R_DS(on), fast switching, and robust avalanche behavior in compact packages.

FAQ

What is the maximum continuous drain current for PSMN1R0-25YLD?

The datasheet specifies 240 A continuous drain current at T_mb = 25 °C, validated in application testing. Real-world current is limited by PCB thermal design-specifically copper area, thickness, and airflow-and mounting base temperature. At T_mb = 100 °C, rated current drops to 216 A per Figure 2.

Does PSMN1R0-25YLD require a gate driver for 4.5 V logic-level operation?

No external level shifter is needed, as the device is fully enhanced at 4.5 V (V_GS(th) = 1.2–2.2 V). However, a dedicated gate driver is recommended for high-frequency (>300 kHz) or high-current (>100 A) applications to ensure fast, controlled switching and minimize Q_G-related losses-especially given its 71.8 nC total gate charge.

How does the SchottkyPlus technology differ from a standard MOSFET body diode?

SchottkyPlus provides soft-recovery characteristics (t_rr = 36.9 ns, S = 0.9) and low forward voltage (V_SD = 0.79 V) like a Schottky diode, but with leakage <1 µA at 25 °C-unlike integrated Schottky MOSFETs that suffer >100 µA leakage. This enables synchronous rectification without compromising standby power or thermal stability.

Can PSMN1R0-25YLD be wave soldered, and what are the key layout requirements?

Yes-the LFPAK56 package is explicitly qualified for wave soldering. Key layout requirements include using the footprint in Figure 19: 4.826 mm × 1.78 mm solder lands, 1.27 mm lead pitch, and 0.635 mm lead width. Exposed mounting base must be connected to a large copper pour for thermal and electrical performance, and solder mask should fully cover adjacent traces to prevent bridging.

PSMN1R0-25YLD/1X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN1R0-25YLD/1X FAQ

1.How can I place an order for PSMN1R0-25YLD/1X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R0-25YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R0-25YLD/1X reliable?

The price and inventory of PSMN1R0-25YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R0-25YLD/1X is usually 5 days.

3.What payment methods are accepted for PSMN1R0-25YLD/1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R0-25YLD/1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R0-25YLD/1X?

PSMN1R0-25YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R0-25YLD/1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R0-25YLD/1X?

For technical support, including PSMN1R0-25YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R0-25YLD/1X requirements.

6.How does Aetrix verify that PSMN1R0-25YLD/1X is sourced from the original manufacturer or authorized distributors?

All PSMN1R0-25YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R0-25YLD/1X meets industry standards.

7.What is the process for return or replacement of PSMN1R0-25YLD/1X?

All PSMN1R0-25YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R0-25YLD/1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R0-25YLD/1X part is unused and in its original packaging.

Return procedure for PSMN1R0-25YLD/1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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