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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PSMN1R4-40YLD/1X

Name: PSMN1R4-40YLD/1X
Brand: Nexperia USA Inc.
SKU: PSMN1R4-40YLD/1X
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PSMN1R4-40YLD/1X

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: -

Datasheet:: PSMN1R4-40YLD/1X.pdf

Description:: MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:9,461

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Product details

Overview

PSMN1R4-40YLD from Nexperia is an N-channel logic-level power MOSFET in LFPAK56 (SOT669) package, rated for 40 V V_DS, 1.4 mΩ R_DS(on) @ V_GS = 10 V / T_j = 25 °C, and 240 A continuous drain current at T_mb = 25 °C. It employs NextPower-S3 Superjunction technology with Schottky-Plus body diode, optimized for high-efficiency synchronous rectification in server power supplies.

For engineers reviewing the PSMN1R4-40YLD datasheet, PSMN1R4-40YLD pinout, PSMN1R4-40YLD application, or PSMN1R4-40YLD equivalent, key selection criteria include its 4.5 V gate drive compatibility, 175 °C junction-rated LFPAK56 copper-clip package, avalanche ruggedness (100% tested I_AS = 190 A), low Q_G/Q_GD, and soft-recovery diode performance critical for EMI-sensitive DC-DC converters.

Technical Context

This MOSFET uses TrenchMOS Superjunction architecture with integrated Schottky-Plus body diode to deliver soft reverse recovery (t_rr = 47 ns, Q_r = 61 nC) and low switching losses. Its gate threshold voltage (V_GS(th) = 1.05–2.2 V) and low R_DS(on) temperature coefficient enable stable operation across -55 °C to 175 °C junction range.

The LFPAK56 package features exposed mounting base connected to drain, three parallel source terminals, and a single gate terminal - enabling low-inductance, high-current PCB layouts with wave-solderable leads and visual solder-joint inspection. Thermal resistance from junction to mounting base is 0.56 K/W (typ).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V maximum drain-source voltage - defines safe blocking capability in 12 V/48 V bus systems
R_DS(on)	1.4 mΩ max @ V_GS = 10 V, T_j = 25 °C - enables <240 A conduction with <8 W conduction loss at 25 °C
I_D (cont)	240 A @ T_mb = 25 °C - validated continuous current under ideal thermal mounting conditions
Q_G(tot)	45–65 nC @ V_GS = 4.5 V - determines gate driver strength requirement for fast, low-loss switching
t_rr	47 ns typical - supports high-frequency synchronous rectification with minimal switching loss and EMI
R_th(j-mb)	0.56 K/W typical - enables direct thermal coupling to heatsink via mounting base for high-power density designs
I_AS	190 A (100% tested) - guarantees unclamped avalanche energy handling (E_AS = 446 mJ) without failure

Pinout & Package

LFPAK56 (SOT669) is a copper-clip, leadframe-based surface-mount package with exposed mounting base (drain-connected), qualified to 175 °C and optimized for high-current, low-inductance PCB layouts. Its 4-terminal configuration supports wave soldering and visual solder-joint inspection.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3	Source (S)	Three parallel low-inductance source connections - reduce source loop inductance and improve switching stability
4	Gate (G)	Single gate input - compatible with standard 4.5 V logic-level drivers; low C_iss (6.7–10.4 nF) eases drive design
Mounting Base (mb)	Drain (D)	Exposed copper pad electrically and thermally connected to drain - serves as primary heat path and high-current drain node

Key Features

Feature	Design Value
NextPower-S3 Superjunction technology	Delivers 'superfast switching with soft recovery' - reduces switching loss and EMI vs. conventional trench MOSFETs
Schottky-Plus body diode	Enables soft reverse recovery (Q_r = 61 nC) without high I_DSS leakage - eliminates need for external Schottky in many sync-rectifier designs
Optimized for 4.5 V gate drive	R_DS(on) = 1.38–1.85 mΩ @ V_GS = 4.5 V - ensures full enhancement with standard logic-level controllers
175 °C qualified LFPAK56 package	Copper-clip construction with solder die attach - provides robust thermal performance and mechanical reliability in high-temp industrial/server environments
Avalanche rated & 100% tested	I_AS = 190 A - guarantees ruggedness against inductive switching transients without derating or external protection

Applications

Synchronous Rectification

High-Efficiency Server PSU

Use Scenario: Secondary-side switching in isolated 48 V–12 V DC-DC converters for AI accelerators and cloud servers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce conduction loss and improve efficiency above 95%.

Use Value: 1.4 mΩ R_DS(on) and soft-recovery diode cut conduction loss by >40% vs. 40 V Schottky, while eliminating reverse-recovery spikes.

Use Scenario: Primary-side high-current switches in multiphase VRMs powering high-TDP CPUs/GPUs.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) power switch operating at 300–600 kHz with tight thermal constraints.

Use Value: 240 A rating and 0.56 K/W R_th(j-mb) allow compact thermal design; LFPAK56's exposed drain enables direct heatsink attachment.

Motor Control (BLDC Inverter)

Power OR-ing

Use Scenario: Low-side switch in 24–48 V brushless DC motor inverters for industrial automation and robotics.

IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged N-channel switch handling PWM commutation and regenerative braking currents.

Use Value: 190 A avalanche rating and 47 ns t_rr prevent failure during inductive kickback; low Q_G enables efficient 20–50 kHz PWM control.

Use Scenario: Redundant 12 V/48 V power rail OR-ing in telecom and datacom equipment with hot-swap capability.

IC Role / Device Role / Timing Role: Low-V_DS forward-path switch with fast turn-on/off to minimize cross-conduction and reverse-current risk.

Use Value: 1.4 mΩ R_DS(on) limits forward drop to <0.3 V at 200 A; Schottky-Plus diode blocks reverse current without leakage penalty.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current logic-level MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon IPP026N04L	40 V, 2.6 mΩ @ 10 V, 180 A, TO-220 package - higher R_DS(on), larger footprint, no integrated soft diode	Limited to lower-current or less space-constrained designs; requires external diode for soft recovery	Choose when legacy TO-220 layout compatibility is required and 20% higher conduction loss is acceptable
Vishay SiR626DP	40 V, 1.3 mΩ @ 10 V, 220 A, PowerPAK SO-8L - similar R_DS(on) but 150 °C rated, no 100% avalanche test	Not qualified for 175 °C operation; lacks guaranteed avalanche ruggedness for high-reliability power stages	Prefer only for cost-sensitive, non-critical 150 °C max ambient applications where avalanche margin is not mandatory

Compared with IPP026N04L and SiR626DP, PSMN1R4-40YLD uniquely combines 175 °C qualification, 100% tested avalanche ruggedness, Schottky-Plus soft diode, and LFPAK56's low-inductance 3-source layout - making it optimal for high-density, high-reliability server and industrial power conversion where thermal headroom and transient robustness are critical.

Availability

PSMN1R4-40YLD is available at Aetrix Electronics and suitable for high-efficiency server power supplies, synchronous rectification circuits, BLDC motor inverters, and redundant power OR-ing systems requiring stable component supply and long-term industrial lifecycle support.

Supply support for PSMN1R4-40YLD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors - high-volume, high-reliability discrete, logic, and MOSFET solutions for automotive, industrial, and computing markets.

PSMN1R4-40YLD belongs to Nexperia's NextPower-S3 logic-level MOSFET product line, engineered specifically for high-current, high-frequency power conversion in datacenter and industrial infrastructure where efficiency, thermal resilience, and avalanche robustness are non-negotiable.

FAQ

What gate drive voltage is required for full enhancement?

PSMN1R4-40YLD achieves full enhancement at V_GS ≥ 4.5 V, with R_DS(on) = 1.38–1.85 mΩ (typ/max) at 25 °C. At 10 V, R_DS(on) drops to 1.12–1.4 mΩ. Its logic-level threshold (V_GS(th) = 1.05–2.2 V) ensures reliable turn-on with standard 3.3 V or 5 V controllers, but 4.5 V is recommended for minimum conduction loss.

Is the mounting base electrically isolated?

No - the mounting base (mb) is internally connected to the drain terminal. This is confirmed in Table 2 (Pinning information) and Figure 17 (package outline), where "mb D mounting base; connected to drain" is explicitly stated. Designers must ensure proper isolation of the heatsink or PCB pad from other potentials.

How is avalanche ruggedness verified?

Avalanche ruggedness is 100% production-tested per datasheet Section 8: I_AS = 190 A is guaranteed, with unclamped E_AS = 446 mJ (T_j(init) = 25 °C). Testing follows JEDEC JESD24-11 methodology using controlled inductive switching with V_GS = 10 V, R_GS = 50 Ω, and V_sup ≤ 40 V - ensuring each unit withstands real-world inductive transients.

Can this MOSFET be wave soldered?

Yes - the LFPAK56 package is explicitly designed for wave soldering, as confirmed in Section 12 (Soldering) and Figure 19. Its exposed leads (pins 1–4) and mounting base support reliable wave solder joints; Figure 19 provides exact footprint dimensions (e.g., 0.6 mm × 4.826 mm solder lands) and solder resist openings for process validation.

PSMN1R4-40YLD/1X Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PSMN1R4-40YLD/1X FAQ

1.How can I place an order for PSMN1R4-40YLD/1X through Aetrix?

Please submit a Request for Quotation (RFQ) for PSMN1R4-40YLD/1X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PSMN1R4-40YLD/1X reliable?

The price and inventory of PSMN1R4-40YLD/1X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PSMN1R4-40YLD/1X is usually 5 days.

3.What payment methods are accepted for PSMN1R4-40YLD/1X?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PSMN1R4-40YLD/1X transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PSMN1R4-40YLD/1X?

PSMN1R4-40YLD/1X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PSMN1R4-40YLD/1X order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PSMN1R4-40YLD/1X?

For technical support, including PSMN1R4-40YLD/1X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PSMN1R4-40YLD/1X requirements.

6.How does Aetrix verify that PSMN1R4-40YLD/1X is sourced from the original manufacturer or authorized distributors?

All PSMN1R4-40YLD/1X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PSMN1R4-40YLD/1X meets industry standards.

7.What is the process for return or replacement of PSMN1R4-40YLD/1X?

All PSMN1R4-40YLD/1X units undergo pre-shipment inspection (PSI). If there is an issue with PSMN1R4-40YLD/1X, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PSMN1R4-40YLD/1X part is unused and in its original packaging.

Return procedure for PSMN1R4-40YLD/1X:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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