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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH10G65C5ZXKSA1DIODE SIL CARB 650V 10A TO220-2 Infineon Technologies |
6,500 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDT04S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
4,843 | 0.00 |
|
Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
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IDT16S60CHKSA1DIODE SCHOTTKY 600V TO220-2 Infineon Technologies |
2,715 | 0.00 |
|
Datasheet |
- | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IDD09SG60CXTMA2DIODE SIL CARB 600V 9A TO252-3 Infineon Technologies |
4,186 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
|
|
IDH03SG60CXKSA2DIODE SIL CARB 600V 3A TO220-2-1 Infineon Technologies |
2,374 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 3A | 2.3 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 600 V | 60pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH05SG60CXKSA2DIODE SIL CARB 600V 5A TO220-2-1 Infineon Technologies |
5,315 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 5A | 2.3 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 600 V | 110pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
IDH09SG60CXKSA2DIODE SIL CARB 600V 9A TO220-2-1 Infineon Technologies |
9,451 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 9A | 2.1 V @ 9 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 600 V | 280pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
|
D291S45TXPSA1DIODE GEN PURP 4.5KV 445A Infineon Technologies |
8,595 | 0.00 |
|
Datasheet |
- | DO-200AB, B-PUK | Tray | Obsolete | Standard | 4500 V | 445A | 4.15 V @ 1200 A | Standard Recovery >500ns, > 200mA (Io) | - | 50 mA @ 4500 V | - | - | - | Clamp On | - | -40°C ~ 125°C |
|
D1301SH45TXPSA1DIODE GEN PURP 4.5KV 1740A Infineon Technologies |
2,129 | 0.00 |
|
Datasheet |
- | DO-200AE | Tray | Obsolete | Standard | 4500 V | 1740A | 4.3 V @ 2500 A | Standard Recovery >500ns, > 200mA (Io) | - | 150 mA @ 4500 V | - | - | - | Chassis Mount | - | 0°C ~ 140°C |
|
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D126A45CXPSA1DIODE GEN PURP 4.5KV 200A Infineon Technologies |
6,861 | 0.00 |
|
- |
- | DO-205AA, DO-8, Stud | Bulk | Obsolete | Standard | 4500 V | 200A | - | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 4500 V | - | - | - | Stud Mount | - | -40°C ~ 160°C |
