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Single Diodes
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
6,919 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 100A | 2.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 20 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
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|
IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
2,541 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
5,947 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 5A | 2.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 100 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
4,112 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
8,722 | 0.00 |
|
Datasheet |
- | Die | Bulk | Obsolete | Standard | 1200 V | 10A | 2.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 200 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
|
|
IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
5,274 | 0.00 |
|
Datasheet |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
IDP2302XUMA1AC/DC DIGITAL PLATFORM Infineon Technologies |
9,163 | 0.00 |
|
Datasheet |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IDB15E60ATMA1DIODE GP 600V 29.2A TO263-3-2 Infineon Technologies |
3,500 | 0.00 |
|
Datasheet |
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | Standard | 600 V | 29.2A | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | - | - | Surface Mount | PG-TO263-3-2 | -40°C ~ 175°C |
|
|
IDB10S60CATMA2DIODE SIL CARB 600V 10A TO263-3 Infineon Technologies |
4,014 | 0.00 |
|
Datasheet |
CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Discontinued at Digi-Key | SiC (Silicon Carbide) Schottky | 600 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 140 µA @ 600 V | 480pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-3-2 | -55°C ~ 175°C |
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IDH10G65C5ZXKSA2DIODE SCHOTTKY 650V 10A TO220-2 Infineon Technologies |
8,552 | 0.00 |
|
Datasheet |
* | - | Tube | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
