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Infineon Technologies IDB15E60ATMA1

Part No.:
IDB15E60ATMA1
Manufacturer:
Infineon Technologies
Category:
Single Diodes
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixIDB15E60ATMA1.pdf
Description:
DIODE GP 600V 29.2A TO263-3-2
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,500

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Product details

Overview

IDB15E60ATMA1 from Infineon Technologies is a 600 V, 15 A fast-switching Emitter Controlled (EmCon) diode in PG-TO263-3 package, featuring 1.5 V forward voltage at 15 A/25°C, 87 ns reverse recovery time at 25°C, and 175°C maximum junction temperature. It serves as a high-efficiency freewheeling or snubber diode in industrial SMPS, solar inverters, and motor drives requiring soft switching and low Qrr.

For engineers reviewing the IDB15E60ATMA1 datasheet, IDB15E60ATMA1 pinout, IDB15E60ATMA1 application, or IDB15E60ATMA1 equivalent, key selection criteria include reverse recovery softness factor (S = 3.6–4.5), low reverse recovery charge (Qrr = 595–1104 nC), thermal resistance (RthJC = 1.8 K/W), and paralleling capability enabled by EmCon technology.

Technical Context

This EmCon diode employs an integrated emitter-controlled structure to suppress minority-carrier injection during turn-off, enabling controlled, soft reverse recovery with minimal voltage overshoot. Its design eliminates the need for external snubbers in hard-switched topologies like LLC resonant converters and phase-shifted full-bridge circuits.

Unlike conventional fast recovery diodes, it delivers stable trr and Qrr across temperature (trr = 87–131 ns from 25°C to 150°C) and di/dt (up to 1000 A/µs), while maintaining low forward conduction loss (VF = 1.5 V typ. @ 15 A, 25°C) and high surge robustness (IFSM = 60 A).

Key Specifications

ParameterValue and Actual Design Meaning
VRRM600 V - supports DC bus voltages up to 400 V nominal with 50% safety margin in industrial PFC and inverter stages
IF (TC=25°C)29.2 A - continuous forward current rating at case temperature 25°C, derates to 19.6 A at 90°C
VF @ 15 A, 25°C1.5 V - reduces conduction loss by ~15% vs. standard FRD counterparts, lowering thermal stress in high-duty-cycle operation
trr @ 25°C87 ns - enables >100 kHz switching in hard-switched converters without excessive EMI or voltage spikes
Qrr @ 25°C595 nC - minimizes switching loss in synchronous rectification and active clamp circuits
RthJC1.8 K/W - allows direct heatsink mounting with predictable thermal path for compact power module integration
Tjmax175 °C - supports operation in high-ambient environments (e.g., enclosed motor drives, solar enclosures)

Pinout & Package

Package: PG-TO263-3 (D²PAK), surface-mount, RoHS-compliant, with exposed drain pad for thermal enhancement.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1No Connect (NC)Internally unconnected; must remain floating or grounded per layout guidelines to avoid parasitic coupling
Pin 2Cathode (C)Main current output terminal; electrically tied to exposed metal tab for low-inductance, high-current return path
Pin 3Anode (A)Current input terminal; isolated from tab; requires proper trace width and copper area for 15 A continuous routing

Key Features

FeatureDesign Value
Emitter Controlled (EmCon) architectureEnables precise control of carrier lifetime without lifetime-killing dopants, preserving long-term reliability and stable Qrr over temperature
Soft reverse recovery (S ≥ 3.6)Reduces EMI generation and voltage ringing during commutation, eliminating need for RC snubbers in many 3–10 kW designs
Low RthJC (1.8 K/W)Supports >20 W dissipation at TC = 90°C, enabling smaller heatsinks in space-constrained industrial inverters
Easy paralleling capabilityMatched dynamic characteristics and positive VF temperature coefficient allow direct parallel connection without current-sharing resistors

Applications

Solar String Inverter DC-LinkIndustrial SMPS Output Rectification

Use Scenario: Freewheeling path in boost PFC stage handling 800 V DC link with 15 A average current.

IC Role / Device Role / Timing Role: Fast-recovery diode providing low-loss, soft-commutating return path during MOSFET turn-on.

Use Value: Qrr = 595 nC and trr = 87 ns reduce switching loss by 32% vs. standard FRD, improving system efficiency from 96.1% to 96.7% at full load.

Use Scenario: Secondary-side rectification in 3 kW telecom rectifier operating at 100 kHz.

IC Role / Device Role / Timing Role: High-current output diode managing 15 A continuous conduction mode (CCM) with minimal forward drop.

Use Value: VF = 1.5 V at 15 A lowers conduction loss by 0.45 W per device vs. 1.7 V alternative, reducing thermal footprint by 12°C at TC = 85°C.

Motor Drive Braking CircuitUPS Inverter Bridge Clamp

Use Scenario: Regenerative braking path in 7.5 kW servo drive with 400 V DC bus.

IC Role / Device Role / Timing Role: Snubberless freewheeling diode absorbing inductive energy during IGBT turn-off.

Use Value: Soft recovery (S = 3.6) limits voltage overshoot to <15 V above VRRM, avoiding additional clamping components and PCB area.

Use Scenario: Active clamp diode in three-phase UPS inverter handling bidirectional 12 kVA power flow.

IC Role / Device Role / Timing Role: Low-Qrr clamp path enabling zero-voltage switching (ZVS) across full load range.

Use Value: Stable Qrr variation (<±8% from 25°C to 150°C) ensures consistent ZVS timing margin, eliminating risk of hard-switching failure at elevated temperatures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fast-recovery diode applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STTH1506DHigher VF (1.75 V @ 15 A), slower trr (110 ns), no EmCon softness control (S ≈ 1.2)Limited suitability for snubberless designs; requires larger heatsink and snubber network in >50 kHz operationSelect when cost sensitivity outweighs EMI and efficiency requirements in non-critical 30–60 kHz applications
IXYS MBR1560CTSchottky construction - zero Qrr, but VRRM limited to 60 V; not rated for 600 V systemsOnly viable in low-voltage secondary-side rectification; incompatible with primary-side 400–800 V DC linksReject for any 600 V application; consider only for <100 V output stages where ultra-low VF dominates

Compared with STTH1506D and MBR1560CT, IDB15E60ATMA1 uniquely balances 600 V blocking, soft recovery, and low VF-enabling snubberless, high-frequency, high-efficiency operation where Schottky voltage limits or FRD EMI penalties are unacceptable.

Availability

IDB15E60ATMA1 is available at Aetrix Electronics and suitable for solar inverters, industrial SMPS, motor drives, and UPS systems requiring stable component supply, long-lifecycle support, and guaranteed RoHS compliance.

Supply support for IDB15E60ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

IDB15E60ATMA1 belongs to Infineon's EmCon diode product line, engineered specifically for high-efficiency, high-reliability switching power conversion in demanding industrial and solar applications where soft recovery and thermal robustness are critical.

FAQ

What is the function of Pin 1 (NC) on IDB15E60ATMA1?

Pin 1 is internally unconnected and must remain electrically floating or be tied to ground per Infineon's layout recommendations to prevent unintended coupling into the cathode-anode path. It is not a functional terminal and carries no current or signal role in circuit operation.

Can IDB15E60ATMA1 be used in parallel without current-sharing resistors?

Yes-its EmCon architecture provides a positive temperature coefficient for forward voltage and tightly matched dynamic parameters (trr, Qrr, S), enabling stable current sharing across multiple devices under thermal and electrical stress without external balancing components.

How does the reverse recovery softness factor (S) impact EMI performance?

A higher S value (3.6–4.5) indicates gradual, controlled current decay during turn-off, reducing di/dt-induced voltage spikes and high-frequency ringing. This directly lowers conducted and radiated EMI, often eliminating the need for ferrite beads or RC snubbers in Class B EMC-compliant designs.

Is IDB15E60ATMA1 suitable for automotive under-hood applications?

No-while rated for Tj = 175°C, Infineon explicitly restricts use in automotive, aviation, or aerospace systems without written approval. Its qualification is industrial-grade (JEDEC JESD47), not AEC-Q101, and lacks automotive-specific reliability testing and traceability documentation.

IDB15E60ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
29.2A
Voltage - Forward (Vf) (Max) @ If:
2 V @ 15 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
87 ns
Current - Reverse Leakage @ Vr:
50 µA @ 600 V
Capacitance @ Vr, F:
-
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2
Operating Temperature - Junction:
-40°C ~ 175°C

IDB15E60ATMA1 FAQ

1.How can I place an order for IDB15E60ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDB15E60ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDB15E60ATMA1 reliable?

The price and inventory of IDB15E60ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDB15E60ATMA1 is usually 5 days.

3.What payment methods are accepted for IDB15E60ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDB15E60ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDB15E60ATMA1?

IDB15E60ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDB15E60ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDB15E60ATMA1?

For technical support, including IDB15E60ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDB15E60ATMA1 requirements.

6.How does Aetrix verify that IDB15E60ATMA1 is sourced from the original manufacturer or authorized distributors?

All IDB15E60ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDB15E60ATMA1 meets industry standards.

7.What is the process for return or replacement of IDB15E60ATMA1?

All IDB15E60ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IDB15E60ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDB15E60ATMA1 part is unused and in its original packaging.

Return procedure for IDB15E60ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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