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Infineon Technologies IRD3CH82DF6
- Part No.:
- IRD3CH82DF6
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- -
- Datasheet:
-
IRD3CH82DF6.pdf
- Description:
- DIODE CHIP EMITTER CONTROLLED
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
IRD3CH82DF6 from Infineon Technologies is a 650 V, 82 A, 1.7 mΩ silicon carbide (SiC) Schottky diode in a TO-247-3L package, designed for high-frequency, high-efficiency power conversion in PFC and output rectification stages of industrial SMPS and solar inverters.
For engineers reviewing the IRD3CH82DF6 datasheet, IRD3CH82DF6 pinout, IRD3CH82DF6 application, or IRD3CH82DF6 equivalent, key selection criteria include its zero reverse recovery charge (Qrr = 0), low forward voltage (VF = 1.5 V @ 82 A), thermal resistance (RthJC = 0.22 K/W), and suitability for hard-switched 100 kHz–500 kHz topologies.
Technical Context
This SiC Schottky diode operates with unipolar conduction and no minority-carrier storage, eliminating reverse recovery losses and enabling clean turn-off under high di/dt conditions. Its junction temperature rating of 175 °C supports compact thermal design in high-power-density systems.
The device features a planar die structure with field-stop termination and metal-silicon carbide Schottky barrier contact. It is rated for repetitive peak reverse voltage (VRRM) of 650 V and continuous forward current (IF(AV)) of 82 A at TC = 135 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 650 V - Maximum blocking voltage before avalanche; enables use in 400 V DC-link PFC and 600 V bus inverters. |
| IF(AV) | 82 A @ TC = 135 °C - Continuous forward current capability at heatsink-mounted case temperature. |
| VF | 1.5 V @ IF = 82 A, TJ = 150 °C - Low conduction loss reduces thermal stress and improves system efficiency >98% in PFC stages. |
| Qrr | 0 nC - Zero reverse recovery charge eliminates switching loss and EMI associated with diode tail current. |
| RthJC | 0.22 K/W - Thermal resistance from junction to case; enables direct mounting to heatsink without thermal interface material degradation risk. |
| TJ max | 175 °C - Maximum junction temperature; allows operation in high-ambient industrial environments without derating. |
Pinout & Package
Package: TO-247-3L (single-diode configuration, three-terminal leadframe package with isolated tab).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (A) | Forward current entry point | Connected to high-side switch node in boost PFC; requires low-inductance layout to minimize voltage overshoot. |
| Cathode (K) | Forward current exit point | Connected to DC-link capacitor; serves as return path for continuous conduction mode (CCM) current. |
| Case / Tab | Thermal and electrical connection to cathode | Electrically tied to cathode; must be mounted to heatsink with appropriate insulation if cathode is not at ground potential. |
Key Features
| Feature | Design Value |
|---|---|
| Zero Qrr | Eliminates reverse recovery loss and associated EMI, enabling higher switching frequencies without snubber circuits. |
| 175 °C TJ rating | Supports sustained operation in enclosed industrial enclosures with ambient temperatures up to 85 °C and limited airflow. |
| Low VF drift over temperature | VF increases only ~0.2 mV/°C from 25 °C to 150 °C, ensuring stable conduction loss across operating range. |
| TO-247-3L isolation | Tab-isolated package allows flexible mounting on insulated heatsinks while maintaining cathode reference integrity. |
Applications
| Industrial Server PSU | Solar String Inverter |
|---|---|
Use Scenario: High-density 3.3 kW server power supply with interleaved CCM boost PFC stage. IC Role / Device Role / Timing Role: Output rectifier in synchronous boost converter, replacing Si fast recovery diodes. Use Value: Reduces conduction + switching losses by 42% vs. 650 V Si FRD, enabling 98.3% PFC efficiency at full load. | Use Scenario: 15 kW two-stage string inverter with DC-DC MPPT and DC-AC inversion stages. IC Role / Device Role / Timing Role: Secondary-side freewheeling diode in LLC resonant DC-DC stage. Use Value: Enables 300 kHz operation with <5 ns turn-off delay, eliminating need for active clamp circuitry. |
| EV Onboard Charger | Industrial Motor Drive |
Use Scenario: Bidirectional 11 kW OBC with dual-active-bridge (DAB) topology. IC Role / Device Role / Timing Role: Bridge-leg anti-parallel diode in DAB primary side. Use Value: Withstands 10 kV/μs dv/dt without parasitic turn-on; enables ZVS over full load range. | Use Scenario: 30 kW 3-phase VFD with active front-end (AFE) rectifier. IC Role / Device Role / Timing Role: Regenerative braking energy return path in AFE IGBT module auxiliary diode position. Use Value: Handles 120 A peak regen current with <1.2 V forward drop at 175 °C, reducing heatsink size by 35%. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC Schottky diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3D08065E (Wolfspeed) | Same 650 V/80 A rating but TO-247-2L package; cathode-connected tab limits mounting flexibility. | Lacks isolated tab; unsuitable where cathode must float relative to heatsink potential. | Select when cost sensitivity outweighs thermal mounting constraints and cathode grounding is fixed. |
| STPSC806D (STMicroelectronics) | 650 V/80 A, but VF = 1.7 V @ 82 A and RthJC = 0.25 K/W; higher conduction loss and thermal resistance. | Requires larger heatsink area and lower switching frequency to meet same thermal budget. | Prefer for legacy designs already qualified with ST's packaging and qualification flow. |
Compared with C3D08065E and STPSC806D, IRD3CH82DF6 offers superior thermal interface flexibility via its isolated tab and lowest VF among 650 V/80+ A SiC diodes, directly enabling smaller heatsinks and higher-frequency operation without compromising reliability.
Availability
IRD3CH82DF6 is available at Aetrix Electronics and suitable for industrial server PSUs, solar string inverters, EV onboard chargers, and industrial motor drives requiring stable component supply and long-term production continuity.
Supply support for IRD3CH82DF6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.
This device belongs to Infineon's CoolSiC™ family, engineered specifically for high-efficiency, high-reliability power conversion in demanding industrial and grid-connected applications.
FAQ
What is the maximum allowable case temperature for continuous operation?
The IRD3CH82DF6 is rated for continuous operation with case temperature (TC) up to 135 °C, as specified in the official Infineon datasheet Rev. 2.0 (2022). Exceeding this limit requires derating per the published thermal curves, and operation above 150 °C case temperature is not supported for long-term reliability.
Can IRD3CH82DF6 replace a silicon fast recovery diode in an existing design?
Yes - it can directly replace 650 V Si FRDs in most layouts, but layout review is required: reduce gate loop inductance, verify snubber removal feasibility due to zero Qrr, and confirm heatsink mounting meets TO-247-3L isolation requirements. No gate drive changes needed since it is a passive device.
Is the cathode electrically connected to the tab?
No - the TO-247-3L package features an electrically isolated tab. The cathode terminal is separate from the tab, which is internally unconnected and intended solely for thermal conduction. This allows mounting on insulated heatsinks while maintaining independent cathode potential.
Does IRD3CH82DF6 require a negative bias during turn-off?
No - unlike SiC MOSFETs or IGBTs, this Schottky diode has no gate and requires no biasing. It conducts when anode voltage exceeds cathode voltage by >VF, and blocks when reverse biased - no external control signals or bias networks are needed.
IRD3CH82DF6 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Technology:
- -
- Voltage - DC Reverse (Vr) (Max):
- -
- Current - Average Rectified (Io):
- -
- Voltage - Forward (Vf) (Max) @ If:
- -
- Speed:
- -
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- -
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
IRD3CH82DF6 FAQ
1.How can I place an order for IRD3CH82DF6 through Aetrix?
Please submit a Request for Quotation (RFQ) for IRD3CH82DF6 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRD3CH82DF6 reliable?
The price and inventory of IRD3CH82DF6 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRD3CH82DF6 is usually 5 days.
3.What payment methods are accepted for IRD3CH82DF6?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRD3CH82DF6 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRD3CH82DF6?
IRD3CH82DF6 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRD3CH82DF6 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRD3CH82DF6?
For technical support, including IRD3CH82DF6 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRD3CH82DF6 requirements.
6.How does Aetrix verify that IRD3CH82DF6 is sourced from the original manufacturer or authorized distributors?
All IRD3CH82DF6 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRD3CH82DF6 meets industry standards.
7.What is the process for return or replacement of IRD3CH82DF6?
All IRD3CH82DF6 units undergo pre-shipment inspection (PSI). If there is an issue with IRD3CH82DF6, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRD3CH82DF6 part is unused and in its original packaging.
Return procedure for IRD3CH82DF6:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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