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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDB12E120ATMA1 DIODE GP 1.2KV 28A TO263-3-2 Infineon Technologies	2,052	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Standard	1200 V	28A	2.15 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	100 µA @ 1200 V	-	-	-	Surface Mount	PG-TO263-3-2	-55°C ~ 150°C
IDB30E60ATMA1 DIODE GP 600V 52.3A TO263-3-2 Infineon Technologies	5,677	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Standard	600 V	52.3A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	126 ns	50 µA @ 600 V	-	-	-	Surface Mount	PG-TO263-3-2	-40°C ~ 175°C
IDV30E60C DIODE GP 600V 21A TO220-2FP Infineon Technologies	4,229	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	Standard	600 V	21A	2.05 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	130 ns	40 µA @ 600 V	-	-	-	Through Hole	PG-TO220-2 Full Pack	-55°C ~ 175°C
IDH10G65C5XKSA1 DIODE SIL CARB 650V 10A TO220-2 Infineon Technologies	7,297	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	340 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH05G65C5XKSA1 DIODE SIL CARB 650V 5A TO220-2-2 Infineon Technologies	2,413	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	170 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH08G65C5XKSA1 DIODE SIL CARB 650V 8A TO220-2-2 Infineon Technologies	4,174	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	280 µA @ 650 V	250pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDW40G65C5FKSA1 DIODE SIL CARB 650V 40A TO247-3 Infineon Technologies	3,629	RFQ	Datasheet	CoolSiC™+	TO-247-3	Bulk	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	40A	1.7 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	1.4 mA @ 650 V	1140pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
IDH20G65C5XKSA1 DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies	3,626	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	700 µA @ 650 V	590pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDW10G65C5FKSA1 DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies	5,244	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 650 V	300pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-41	-55°C ~ 175°C
IDH03G65C5XKSA1 DIODE SIL CARB 650V 3A TO220-2-2 Infineon Technologies	5,340	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	3A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	100pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C

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