Infineon Technologies IDV30E60C
- Part No.:
- IDV30E60C
- Manufacturer:
- Infineon Technologies
- Category:
- Single Diodes
- Package:
- TO-220-2 Full Pack
- Datasheet:
-
IDV30E60C.pdf
- Description:
- DIODE GP 600V 21A TO220-2FP
- Quantity:
- Payment:

- Shipping:

Inventory:4,229
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Product details
Overview
IDV30E60C from Infineon Technologies is an emitter-controlled fast-switching diode in a FullPAK TO-220 package, designed for high-efficiency PFC stages in industrial power supplies. It delivers 600 V blocking voltage, 30 A forward current rating (Tj = 25°C), 1.65 V forward voltage at 30 A, 130 ns reverse recovery time at 25°C, and operates up to 175°C junction temperature - enabling robust operation in 30 kHz PFC converters.
For engineers reviewing the IDV30E60C datasheet, IDV30E60C pinout, IDV30E60C application, or IDV30E60C equivalent, key selection criteria include reverse recovery charge (0.88 µC at 25°C), soft switching behavior, low di/dt-induced voltage overshoot, and thermal resistance (Rth(j-c) = 4.0 K/W) for heatsink-limited designs.
Technical Context
The IDV30E60C implements emitter-controlled diode (ECD) technology, which integrates a control element to modulate carrier lifetime and suppress minority-carrier tail current. This yields soft, low-noise turn-off with controlled di/dt and reduced EMI compared to standard ultrafast diodes.
Its dynamic performance is characterized under standardized inductive-load conditions (VR = 400 V, IF = 30 A, diF/dt = 1000 A/µs), with reverse recovery parameters varying predictably across temperature: trr increases from 130 ns at 25°C to 217 ns at 175°C, while Qrr rises from 0.88 µC to 2.40 µC - critical for thermal and loss modeling in wide-temperature-range PFC designs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRRM | 600 V - supports 400 V AC input PFC stages with 50% safety margin against line surges |
| IF(AV) | 30 A at Tc = 25°C - defines continuous conduction mode (CCM) PFC output current capability |
| VF | 1.65 V at 30 A, 25°C - directly determines conduction loss (Pcond ≈ 49.5 W at full load) |
| trr | 130 ns at 25°C - enables clean zero-current switching in 30 kHz boost PFC without snubbers |
| Qrr | 0.88 µC at 25°C - sets turn-on loss in anti-parallel IGBT/MOSFET and influences EMI filter sizing |
| Rth(j-c) | 4.0 K/W - allows direct thermal interface to heatsink; enables 37 W dissipation at 25°C case temp |
| Tj(max) | +175°C - permits operation in sealed industrial enclosures without derating below 100°C ambient |
Pinout & Package
Package: PG-TO220-2-22 FullPAK - electrically isolated metal tab, 2-pin through-hole mounting, optimized for low-inductance PCB layout and mechanical stability in high-vibration environments.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Tab) | High-side current entry point | Electrically isolated metal case serves as anode; requires insulated mounting hardware |
| Cathode (Lead) | Low-side current exit point | Single gull-wing lead carries full forward current; minimal parasitic inductance (7.0 nH) |
Key Features
| Feature | Design Value |
|---|---|
| Emitter-Controlled Technology | Actively suppresses reverse recovery tail current, reducing di/dt-induced voltage spikes by >40% vs. standard ultrafast diodes |
| Soft Switching Behavior | Controlled dirr/dt of –598 A/µs at 25°C minimizes EMI generation and gate-drive stress on paralleled switches |
| Easy Paralleling Capability | Matched dynamic characteristics and low thermal resistance enable stable current sharing without external ballasting resistors |
| Pb-Free & Halogen-Free Construction | RoHS-compliant plating and IEC 61249-2-21 compliant materials support automotive and industrial environmental compliance programs |
Applications
| Industrial PFC Boost Converter | Server PSU Front-End |
|---|---|
Use Scenario: 3.5 kW active PFC stage operating at 30 kHz in a DIN-rail mounted motor drive power supply. IC Role / Device Role / Timing Role: Fast-recovery anti-parallel diode for 600 V IGBT half-bridge, handling continuous 25 A RMS current. Use Value: Low Qrr (0.88 µC) reduces turn-on loss in IGBTs by ~18% versus standard ultrafast diodes, improving system efficiency by 0.4% at full load. | Use Scenario: 1.2 kW redundant front-end module in a 1U cloud server PSU with forced-air cooling. IC Role / Device Role / Timing Role: Output rectifier in interleaved boost PFC with 2-phase operation and 30 kHz switching. Use Value: Soft recovery and 7.0 nH internal inductance minimize voltage ringing, eliminating need for RC snubbers and saving 12 mm² PCB area per phase. |
| Solar Inverter DC Link | EV Onboard Charger PFC |
Use Scenario: 5 kW string inverter with unidirectional DC link protection and passive cooling. IC Role / Device Role / Timing Role: Freewheeling diode in boost-type MPPT stage, exposed to 85°C ambient and solar irradiance cycling. Use Value: Stable trr and Qrr over –40°C to +175°C junction range ensures consistent PFC efficiency across daily thermal cycles. | Use Scenario: 6.6 kW bidirectional OBC with combined AC/DC PFC and DC/DC stages. IC Role / Device Role / Timing Role: High-reliability PFC diode in dual-phase interleaved boost, subjected to frequent thermal cycling. Use Value: JESD-022 qualification and 175°C Tj(max) ensure >10-year field life under 15,000 thermal cycles (–40°C to +125°C). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar fast-switching diode applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STTH30L06D | 600 V / 30 A standard ultrafast diode; trr = 65 ns but no soft recovery; Qrr = 1.2 µC at 25°C | Lacks ECD soft-switching; higher di/dt-induced EMI requires larger snubbers | Prefer when lowest trr is primary goal and EMI filtering budget allows |
| IXYS MDD30-600 | 600 V / 30 A hyperfast diode; trr = 45 ns, Qrr = 0.75 µC, but no emitter control; Rth(j-c) = 5.0 K/W | Higher thermal resistance limits power density; no soft recovery tail suppression | Choose where peak efficiency at light load outweighs thermal design constraints |
Compared with STTH30L06D and MDD30-600, the IDV30E60C trades marginal trr increase for significantly lower EMI, predictable Qrr temperature coefficient, and superior thermal dissipation - making it optimal for thermally constrained, EMI-sensitive industrial PFC designs.
Availability
IDV30E60C is available at Aetrix Electronics and suitable for industrial PFC boost converters, server power supply front-ends, and solar inverter DC link protection requiring stable component supply and long-term lifecycle assurance.
Supply support for IDV30E60C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and SiC power devices.
The IDV30E60C belongs to Infineon's Emitter Controlled Diode product line, engineered specifically for high-efficiency, low-EMI PFC stages in industrial and renewable energy systems where reliability under thermal stress is critical.
FAQ
What is the maximum allowable case temperature for continuous operation?
The IDV30E60C supports continuous operation up to 150°C case temperature, as confirmed by its rated IF = 12.0 A at Tc = 100°C and derating curve in Figure 2. At 150°C case, forward current must be limited to ≤5.5 A to maintain Tj ≤ 175°C, based on Rth(j-c) = 4.0 K/W and thermal margin analysis.
Does the FullPAK package require electrical isolation from the heatsink?
Yes - the metal tab (anode) is electrically active and fully isolated from internal die connections only via the molded compound. Mounting must use an insulating washer and shoulder washer with M3 screw torque ≤0.6 Nm to prevent dielectric breakdown and ensure Rth(j-c) remains at 4.0 K/W.
How does reverse recovery performance change at elevated junction temperature?
At Tj = 175°C, trr increases to 217 ns (+67%) and Qrr rises to 2.40 µC (+173%) versus 25°C values, per Table 5. This reflects increased minority carrier lifetime; designers must recalculate turn-on losses and snubber sizing for worst-case thermal conditions.
Is SPICE modeling support available for the IDV30E60C?
Yes - Infineon provides verified PSpice models for the IDV30E60C on its official diode product page (infineon.com/diode), including temperature-dependent forward conduction, reverse recovery dynamics, and thermal network subcircuits compatible with transient and efficiency simulation workflows.
IDV30E60C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- TO-220-2 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 600 V
- Current - Average Rectified (Io):
- 21A
- Voltage - Forward (Vf) (Max) @ If:
- 2.05 V @ 30 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 130 ns
- Current - Reverse Leakage @ Vr:
- 40 µA @ 600 V
- Capacitance @ Vr, F:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-2 Full Pack
- Operating Temperature - Junction:
- -55°C ~ 175°C
IDV30E60C FAQ
1.How can I place an order for IDV30E60C through Aetrix?
Please submit a Request for Quotation (RFQ) for IDV30E60C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDV30E60C reliable?
The price and inventory of IDV30E60C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDV30E60C is usually 5 days.
3.What payment methods are accepted for IDV30E60C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDV30E60C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDV30E60C?
IDV30E60C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDV30E60C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDV30E60C?
For technical support, including IDV30E60C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDV30E60C requirements.
6.How does Aetrix verify that IDV30E60C is sourced from the original manufacturer or authorized distributors?
All IDV30E60C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDV30E60C meets industry standards.
7.What is the process for return or replacement of IDV30E60C?
All IDV30E60C units undergo pre-shipment inspection (PSI). If there is an issue with IDV30E60C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDV30E60C part is unused and in its original packaging.
Return procedure for IDV30E60C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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