Infineon Technologies IDH10G65C5XKSA1

Overview

IDH10G65C5XKSA1 from Infineon Technologies is a 650 V, 10 A silicon carbide Schottky diode in TO-220-2 package, designed for high-frequency switching in power conversion stages. It delivers zero reverse recovery charge, 1.5–1.7 V forward voltage at 10 A/25°C, 15 nC capacitive charge at 400 V, and operates up to 175°C junction temperature-enabling PFC and solar inverter designs requiring high efficiency and thermal robustness.

For engineers reviewing the IDH10G65C5XKSA1 datasheet, IDH10G65C5XKSA1 pinout, IDH10G65C5XKSA1 application, or IDH10G65C5XKSA1 equivalent, key selection criteria include its SiC-based zero-recovery behavior, 650 V V_RRM, 82 A surge rating at 25°C, thermal resistance of 1.0–1.7 K/W (junction-to-case), and compatibility with CoolMOS™ 650 V gate drivers in hard-switched topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered thin-wafer process to achieve lower Q_C × V_F figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or temperature-dependent switching delay.

The device is rated for repetitive 650 V blocking and 10 A continuous forward current at T_C < 140°C, with validated avalanche ruggedness under 10 ms pulses. Its dv/dt capability exceeds 100 V/ns across 0–480 V reverse bias, supporting fast-switching half-bridge and totem-pole PFC configurations.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A); Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10065DL, IDH10G65C5XKSA1 offers the lowest V_F (1.5 V min) and tightest Qc tolerance (15 nC guaranteed), making it optimal for thermally constrained, medium-frequency (65–150 kHz) industrial power supplies where conduction loss dominates.

Availability

IDH10G65C5XKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link, uninterruptible power supply, and industrial motor drive applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IDH10G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and security ICs, with leadership in silicon carbide and gallium nitride technologies.

IDH10G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-DC converters.

FAQ

Is IDH10G65C5XKSA1 pin-compatible with standard TO-220-2 silicon diodes?

Yes, IDH10G65C5XKSA1 uses the PG-TO220-2 package with identical mechanical footprint and mounting hole pattern as legacy Si TO-220-2 diodes. Pin 1 is cathode and Pin 2 is anode, matching industry-standard orientation. No PCB redesign is required for drop-in replacement in existing layouts.

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies I_F = 10 A is rated for T_C < 140°C. At T_C = 140°C, junction temperature reaches 175°C-the absolute maximum. Operation above 140°C case temperature requires derating; for example, at T_C = 150°C, max I_F drops to approximately 8.3 A per thermal simulation using R_thJC = 1.7 K/W.

Does IDH10G65C5XKSA1 require a gate resistor or snubber network?

No-IDH10G65C5XKSA1 is a passive diode with no gate terminal. However, due to its fast dv/dt capability (100 V/ns), a small RC snubber (e.g., 10 Ω + 100 pF) across the diode is recommended in hard-switched circuits to suppress high-frequency ringing caused by stray inductance in high-di/dt paths.

How does the 15 nC capacitive charge affect gate driver selection in synchronous rectifier designs?

The 15 nC Q_C represents charge injected into the gate driver during turn-on transitions. For a 100 kHz switching frequency and 50% duty cycle, average capacitive current is ~0.75 mA. A gate driver with ≥1 A peak output and low-impedance path (≤1 Ω series resistance) ensures clean voltage transitions and avoids shoot-through risk in synchronous buck or LLC topologies.