Infineon Technologies IDH08G65C5XKSA1

Overview

IDH08G65C5XKSA1 from Infineon Technologies is a 650 V, 8 A silicon carbide Schottky diode in TO-220-2 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (8 A, 25–150°C), 13 nC capacitive charge at 400 V, and 1.2–2.0 K/W junction-to-case thermal resistance. It operates up to 175°C junction temperature and is optimized for high-frequency PFC and solar inverter boost stages.

For engineers reviewing the IDH08G65C5XKSA1 datasheet, IDH08G65C5XKSA1 pinout, IDH08G65C5XKSA1 application, or IDH08G65C5XKSA1 equivalent, key selection criteria include its SiC-specific zero-Qrr behavior, temperature-stable switching, surge current rating of 68 A (10 ms, 25°C), and compatibility with 650 V CoolMOS™ half-bridges in high-efficiency AC/DC and renewable energy systems.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses Infineon's diffusion-soldered die attach and thin-wafer technology to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling operation without reverse recovery loss or forward recovery delay.

The device is rated for 650 V repetitive peak reverse voltage (VRRM) and exhibits temperature-independent switching characteristics across –55°C to +175°C. Its dv/dt ruggedness of 100 V/ns supports robust operation in hard-switched topologies with fast gate drivers.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (2-pin, isolated tab). Pin 1 = Cathode (C), Pin 2 = Anode (A). Pin 3 is not applicable (n.a.). The isolated metal tab serves as cathode connection and thermal path to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D08065E and STPSC8H065, IDH08G65C5XKSA1 delivers the lowest Qc × Vf product among 650 V/8 A SiC diodes, making it optimal for thermally constrained, high-frequency PFC where both conduction and switching losses must be minimized simultaneously.

Availability

IDH08G65C5XKSA1 is available at Aetrix Electronics and suitable for switch mode power supplies, power factor correction circuits, and solar inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant packaging.

Supply support for IDH08G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDH08G65C5XKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion and renewable energy systems operating at elevated temperatures and frequencies.

FAQ

What is the maximum junction temperature rating for IDH08G65C5XKSA1?

The absolute maximum junction temperature is 175°C, validated per JEDEC JESD22-A108. Operation at this limit requires thermal design ensuring case temperature remains ≤145°C under worst-case load and ambient conditions, as specified in Table 3 of the datasheet.

Does IDH08G65C5XKSA1 require a gate driver or external control signal?

No. As a passive unipolar Schottky diode, IDH08G65C5XKSA1 conducts automatically when anode voltage exceeds cathode voltage by ≥1.5 V and blocks when reverse biased. It has no gate terminal and requires no drive circuitry.

How does the isolated tab in the TO-220-2 package affect mounting?

The metal tab is electrically isolated from both pins and serves solely as a thermal interface. It must be mounted to a heatsink using an insulating thermal pad or mica washer; mechanical mounting torque is specified at 70 Ncm for M3 screws to ensure consistent thermal contact without die cracking.

Is avalanche testing performed on every IDH08G65C5XKSA1 unit?

Yes. Per the final datasheet Rev. 2.2, all units undergo 10 ms avalanche stress testing at rated breakdown voltage (650 V) with 18 mA test current. This qualifies the device for unclamped inductive switching (UIS) events in real-world PFC and inverter applications.