Infineon Technologies IDW40G65C5FKSA1

Overview

IDW40G65C5FKSA1 from Infineon Technologies is a 650 V, 40 A silicon carbide (SiC) Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, temperature-independent switching, and 1.5–1.7 V forward voltage at 40 A/25°C. It delivers high surge current capability (182 A, 10 ms), low capacitive charge (55 nC at VR=400 V), and operates up to 175°C junction temperature-designed for high-efficiency PFC stages in industrial solar inverters.

For engineers reviewing the IDW40G65C5FKSA1 datasheet, IDW40G65C5FKSA1 pinout, IDW40G65C5FKSA1 application, or IDW40G65C5FKSA1 equivalent, key selection criteria include its 650 V blocking rating, absence of reverse recovery, thermal resistance (RthJC = 0.6 K/W), avalanche-tested ruggedness, and compatibility with 650 V CoolMOS™ gate drivers in high-frequency SMPS designs.

Technical Context

This SiC Schottky diode replaces conventional silicon fast recovery diodes in hard-switched and resonant topologies. Its unipolar conduction eliminates minority-carrier storage, enabling operation at >100 kHz with minimal switching loss and no dv/dt-induced turn-on. The thin-wafer 5th-generation thinQ!™ process reduces Qc × Vf figure-of-merit while maintaining 100 V/ns dv/dt ruggedness across full temperature range.

Designed as a complementary device to Infineon's 650 V CoolMOS™ families, it supports synchronous rectification and boost PFC stages where low conduction loss, high-temperature stability, and avalanche robustness are mandatory. All units undergo 10 ms avalanche stress testing at 88 mA per JEDEC JESD22-A109.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, RoHS-compliant lead plating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D04065E and STPSC4065DY, IDW40G65C5FKSA1 offers superior thermal resistance (0.6 K/W), guaranteed 10 ms avalanche stress performance, and a dedicated n.c. pin enabling mechanical isolation in high-noise industrial layouts-making it optimal for mission-critical 3–10 kW systems requiring long-term reliability.

Availability

IDW40G65C5FKSA1 is available at Aetrix Electronics and suitable for solar inverter boost stages, industrial UPS rectifiers, and server PSU PFC modules requiring stable component supply, long-lifecycle support, and traceable sourcing.

Supply support for IDW40G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in SiC and GaN technologies for industrial and automotive markets.

IDW40G65C5FKSA1 belongs to Infineon's 5th-generation thinQ!™ SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-density, high-efficiency AC/DC conversion systems.

FAQ

Is IDW40G65C5FKSA1 pin-compatible with standard TO-247-3 silicon diodes?

No. While it uses the PG-TO247-3 outline, Pin 3 is internally unconnected (n.c.). Replacing a 3-pin Si diode requires verifying that the PCB does not route or thermally connect Pin 3-otherwise, unintended shorting or thermal impedance mismatch may occur. Always confirm layout against Infineon's package drawing IPAK-TO247-3 rev. 2.2.

What is the maximum allowable case temperature for continuous 40 A operation?

The datasheet specifies IF = 40 A is rated only for TC < 110°C. At TC = 110°C, junction temperature reaches 175°C (Tj = TC + Ptot × RthJC ≈ 110 + 112 × 0.6 ≈ 177°C), exceeding absolute max. Therefore, sustained 40 A operation requires TC ≤ 105°C to maintain Tj ≤ 175°C with margin. Forced-air cooling or liquid interface is recommended above 85°C ambient.

Does IDW40G65C5FKSA1 require a gate resistor or snubber network?

No. As a Schottky diode, it has no gate and exhibits no reverse recovery. However, due to its low Qc and high dv/dt capability (100 V/ns), a small RC snubber (e.g., 10 Ω + 100 pF) across anode–cathode is recommended only in ultra-high-di/dt circuits (>500 A/µs) to damp parasitic ringing-not for loss suppression, but for EMI control near sensitive analog sections.

Can IDW40G65C5FKSA1 be paralleled for higher current capacity?

Yes, but with strict layout symmetry: matched copper area, identical trace length, and shared thermal plane. Unlike Si diodes, SiC Schottkys have positive VF temperature coefficient, enabling natural current sharing. However, the n.c. Pin 3 must remain unconnected on all paralleled units to avoid ground-loop coupling. Derate total current by 15% for 2-unit parallel configurations per Infineon AN2017-05.