Infineon Technologies IDW10G65C5FKSA1

Overview

IDW10G65C5FKSA1 from Infineon is a 650 V, 10 A silicon carbide Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, 1.5–2.1 V forward voltage (10 A, 25–150°C), and 15 nC capacitive charge at 400 V. It operates up to 175°C junction temperature and is qualified per JEDEC standards for high-reliability power conversion.

For engineers reviewing the IDW10G65C5FKSA1 datasheet, IDW10G65C5FKSA1 pinout, IDW10G65C5FKSA1 application, or IDW10G65C5FKSA1 equivalent, this SiC diode delivers verified thermal robustness, avalanche-tested ruggedness, and system-level EMI reduction in high-frequency PFC and solar inverter designs.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to achieve lower Qc × Vf figure of merit versus prior generations. Its unipolar conduction eliminates minority-carrier storage, enabling true zero reverse recovery and temperature-independent switching behavior across –55°C to +175°C.

The device is optimized as a freewheeling or boost diode in conjunction with 650 V CoolMOS™ MOSFETs. Its 100 V/ns dv/dt ruggedness and 58 A surge rating (10 ms, 25°C) support hard-switched topologies without snubbers.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole power package with isolated tab, 3-pin vertical mount).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D10065A and STPSC10H065D, IDW10G65C5FKSA1 offers superior thermal resistance (1.8 K/W min), guaranteed avalanche ruggedness, and explicit JEDEC qualification-making it preferred for mission-critical PFC and solar inverter deployments where long-term reliability is prioritized over minimal BOM cost.

Availability

IDW10G65C5FKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter boost stages, and uninterruptible power supply designs requiring stable component supply, long-lifecycle assurance, and traceable sourcing.

Supply support for IDW10G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

IDW10G65C5FKSA1 belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to pair with 650 V CoolMOS™ CFD7 transistors in high-efficiency, high-power-density AC/DC and DC/DC conversion systems.

FAQ

Is IDW10G65C5FKSA1 pin-compatible with standard TO-247-3 silicon diodes?

No. Although it shares the PG-TO247-3 mechanical outline, Pin 3 is internally unconnected (n.c.). Standard Si diodes typically use Pin 3 as cathode or case connection. Using this part in a legacy Si diode footprint without verifying Pin 3 isolation may cause short circuits or thermal mismanagement.

What is the maximum allowable case temperature for continuous 10 A operation?

The datasheet specifies IF = 10 A is rated for TC < 130°C. Exceeding 130°C case temperature requires derating-e.g., at TC = 150°C, maximum continuous current drops to approximately 7.2 A based on the IF vs. TC curve (Figure 7, Rev. 2.2).

Does IDW10G65C5FKSA1 require a gate resistor or snubber network?

No. As a Schottky diode with no minority carriers, it has no gate and exhibits no reverse recovery. Its 100 V/ns dv/dt ruggedness eliminates need for snubbers in typical 650 V hard-switched applications-though layout parasitics must still be minimized to avoid oscillation.

How is avalanche capability validated for IDW10G65C5FKSA1?

Each unit undergoes 10 ms avalanche stress testing at rated VRRM with controlled energy, per the final datasheet (Rev. 2.2, Section 2). This is a production test-not just a characterization result-ensuring every shipped device meets minimum single-pulse avalanche energy of 16.6 A²s at 25°C.