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Home > Products > Discrete Semiconductor Products > Diodes > Rectifiers > Single Diodes

Single Diodes

Mfr. Part #	Availability	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
IDH06G65C5XKSA1 DIODE SIL CARB 650V 6A TO220-2-2 Infineon Technologies	8,969	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	210 µA @ 650 V	190pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH04G65C5XKSA1 DIODE SIL CARB 650V 4A TO220-2-2 Infineon Technologies	2,826	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	4A	1.7 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	130pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDW12G65C5FKSA1 DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies	9,222	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	12A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	500 µA @ 650 V	360pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-41	-55°C ~ 175°C
IDW16G65C5FKSA1 DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies	3,635	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	600 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
IDW20G65C5FKSA1 DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies	4,510	RFQ	Datasheet	CoolSiC™+	TO-247-3	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	20A	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	700 µA @ 650 V	590pF @ 1V, 1MHz	-	-	Through Hole	PG-TO247-3-1	-55°C ~ 175°C
IDH09G65C5XKSA1 DIODE SIL CARB 650V 9A TO220-2-2 Infineon Technologies	9,643	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	9A	1.7 V @ 9 A	No Recovery Time > 500mA (Io)	0 ns	310 µA @ 650 V	270pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
IDH16G65C5XKSA1 DIODE SIL CARB 650V 16A TO220-2 Infineon Technologies	8,688	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	16A	1.7 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	550 µA @ 650 V	470pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
HFA08TB60PBF DIODE GEN PURP 600V 8A TO220AC Infineon Technologies	9,336	RFQ	Datasheet	HEXFRED®	TO-220-2	Tube	Obsolete	Standard	600 V	8A	1.7 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
BAS16E6393HTSA1 DIODE GEN PURP 80V 250MA SOT23 Infineon Technologies	7,176	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Last Time Buy	Standard	80 V	250mA	1.25 V @ 150 mA	Fast Recovery =< 500ns, > 200mA (Io)	4 ns	1 µA @ 75 V	2pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-SOT23	150°C (Max)
BAS21E6359HTMA1 DIODE GEN PURP 200V 250MA SOT23 Infineon Technologies	4,283	RFQ	Datasheet	-	TO-236-3, SC-59, SOT-23-3	Tape & Reel (TR)	Obsolete	Standard	200 V	250mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	PG-SOT23	150°C (Max)

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