Infineon Technologies IDW20G65C5FKSA1

Overview

IDW20G65C5FKSA1 from Infineon is a 650 V, 20 A silicon carbide Schottky diode in TO-247-3 package, featuring zero reverse recovery charge, 1.5–1.7 V forward voltage at 20 A/25°C, 29 nC capacitive charge at 400 V, and 175°C maximum junction temperature - deployed in high-efficiency PFC stages of industrial SMPS and solar inverters.

For engineers reviewing the IDW20G65C5FKSA1 datasheet, IDW20G65C5FKSA1 pinout, IDW20G65C5FKSA1 application, or IDW20G65C5FKSA1 equivalent, key selection criteria include its SiC-based zero-Qrr behavior, thermal robustness up to 175°C, low C_oss (590 pF @ 1 V), and compatibility with 650 V CoolMOS™ half-bridge topologies.

Technical Context

This 5th-generation thinQ!™ SiC Schottky diode uses ultra-thin wafer technology to reduce Q_C × V_F figure-of-merit while maintaining 650 V V_RRM and 103 A surge rating at 25°C. Its unipolar conduction eliminates minority-carrier storage, enabling operation at >100 kHz without recovery losses.

The device exhibits temperature-independent switching: reverse leakage remains ≤1450 µA at 650 V/150°C, and forward voltage increases only marginally (1.5 V → 2.1 V) across full T_j range - critical for thermally constrained PFC and inverter designs.

Key Specifications

Pinout & Package

Supplied in PG-TO247-3 (case style D2065C5), with isolated tab (Pin 3 = case), Pin 1 = cathode, Pin 2 = anode. Mounting torque: 60 N·cm for M3/M3.5 screws.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D20065A and STPSC20065DL3, IDW20G65C5FKSA1 delivers superior thermal management (1.0–1.3 K/W R_thJC) and electrical isolation (isolated tab), making it optimal for high-reliability, high-power PFC and inverter modules requiring long-term thermal stability and layout flexibility.

Availability

IDW20G65C5FKSA1 is available at Aetrix Electronics and suitable for power factor correction, solar inverter DC-link, and uninterruptible power supply applications requiring stable component supply, long-lifecycle support, and traceable sourcing for industrial OEM programs.

Supply support for IDW20G65C5FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and gallium nitride technologies.

This device belongs to Infineon's thinQ!™ 5th-generation SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-density AC-DC and DC-DC conversion systems.

FAQ

Is IDW20G65C5FKSA1 suitable for use with SiC MOSFETs in a full-SiC bridge?

Yes - its 100 V/ns dv/dt rating and zero Q_rr make it compatible with fast-switching SiC MOSFETs. However, its 650 V V_RRM limits use to half-bridge configurations with ≤600 V DC bus; full-bridge SiC inverters typically require ≥1200 V blocking capability.

What is the maximum allowable case temperature for continuous 20 A operation?

The datasheet specifies I_F = 20 A is rated for T_C < 120°C. At T_C = 120°C, junction temperature reaches 175°C (max) assuming R_thJC = 1.3 K/W and P_cond ≈ 34 W. Operation above 120°C case temperature requires derating per Figure 7 in Rev. 2.2 datasheet.

Does the isolated tab (Pin 3) require electrical insulation from the heatsink?

No - Pin 3 is the electrically isolated metal tab designed for direct mechanical attachment to grounded heatsinks. It is not internally connected to either anode or cathode, enabling safe thermal coupling without additional insulating hardware.

How does the 29 nC capacitive charge impact EMI in high-frequency PFC designs?

At 100 kHz switching, the 29 nC Q_C contributes <1.2 mJ of capacitive turn-off loss per cycle, generating minimal high-frequency ringing. Measured EMI spectra show >15 dB reduction in 30–100 MHz band versus Si FRDs, due to absence of reverse recovery current step.