Infineon Technologies IDH06G65C5XKSA1

Overview

IDH06G65C5XKSA1 from Infineon is a 650 V, 6 A silicon carbide Schottky diode in TO-220-2 package, designed as a high-efficiency unidirectional power rectifier for high-frequency switching applications. It delivers zero reverse recovery charge, 1.5–2.1 V forward voltage at 6 A across –55°C to 150°C, and 10 nC capacitive charge at VR = 400 V - enabling PFC stages in solar inverters with reduced EMI and thermal stress.

For engineers reviewing the IDH06G65C5XKSA1 datasheet, IDH06G65C5XKSA1 pinout, IDH06G65C5XKSA1 application, or IDH06G65C5XKSA1 equivalent, key selection criteria include its 650 V repetitive peak reverse voltage, temperature-independent switching behavior, surge current capability (54 A @ 10 ms, TC = 25°C), low R_thJC (1.5–2.4 K/W), and RoHS-compliant Pb-free plating.

Technical Context

This SiC Schottky diode uses Infineon's 5th Generation thinQ!™ technology with diffusion-soldered die and thin-wafer design, delivering improved figure-of-merit (Q_C × V_F) over prior generations. Its zero reverse recovery eliminates commutation losses and enables hard-switching operation up to 100 V/ns dv/dt.

The device operates junction temperatures from –55°C to 175°C, with thermal resistance from junction-to-case rated at 1.5–2.4 K/W. Its static characteristics are fully specified at T_j = 25°C and 150°C, and it is qualified per JEDEC standards for industrial and renewable energy applications.

Key Specifications

Pinout & Package

Package: PG-TO220-2 (standard through-hole, 2-pin, isolated tab). Pin 1 is Cathode (C), Pin 2 is Anode (A); Pin 3 is not assigned (n.a.). The metal tab is electrically connected to the cathode and serves as primary thermal path.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SiC Schottky diode applications.

Compared with C3D06065E and STPSC6H065, IDH06G65C5XKSA1 offers the lowest combined Q_C × V_F figure-of-merit and an isolated tab for simplified thermal/mechanical integration - making it optimal for high-reliability, thermally constrained industrial inverters.

Availability

IDH06G65C5XKSA1 is available at Aetrix Electronics and suitable for solar string inverters, industrial switch-mode power supplies, and uninterruptible power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IDH06G65C5XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and R&D infrastructure.

IDH06G65C5XKSA1 belongs to Infineon's 5th Generation thinQ!™ SiC Schottky diode product line, engineered specifically to complement 650 V CoolMOS™ power transistors in high-efficiency, high-power-density AC-DC and DC-DC conversion systems.

FAQ

Is IDH06G65C5XKSA1 pin-compatible with earlier Infineon SiC diodes like IDH06G65C3?

No. While both use TO-220-2 packaging, IDH06G65C5XKSA1 features updated thermal design and thinner die, resulting in lower R_thJC (1.5–2.4 K/W vs. 2.0–2.8 K/W) and tighter V_F distribution. Mechanical footprint matches, but thermal performance and surge capability differ - revalidation of heatsink interface and transient stress is recommended.

What is the maximum allowable case temperature for continuous 6 A operation?

The datasheet specifies I_F = 6 A is rated for T_C < 145°C. At T_C = 145°C, junction temperature reaches 175°C (max rated) assuming R_thJC = 2.4 K/W. Operation above 145°C case temperature violates absolute maximum ratings and risks irreversible degradation of the Schottky barrier.

Does IDH06G65C5XKSA1 require a gate resistor or snubber network?

No. As a Schottky diode with zero reverse recovery, it has no gate and does not require snubbers for typical hard-switched operation up to 100 V/ns. However, layout parasitics (e.g., stray inductance >20 nH) may still induce voltage overshoot - proper PCB layout with minimized loop area remains essential.

Can IDH06G65C5XKSA1 be used in parallel configurations?

Yes, but only with matched units and symmetrical layout. Its positive V_F temperature coefficient enables current sharing, but mismatched thermal paths or bond wire resistance can cause imbalance. Derate total current by ≥20% and ensure ΔT_C ≤ 5°C between paralleled devices for reliable operation.